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- 2019
- microwave photonics
- optoelectronic oscillator
- frequency division
- Optoelectronic Information Science and Engineering
- Jinan University
- Charles Darwin University
- University of Ottawa
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Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes
摘要： Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic properties, including a large exciton binding energy at room temperature and a very small piezoelectric coefficient. The major obstacle to its application is the difficulty in growing a single-crystal epitaxial film of cuprous halides. We first demonstrate the single crystal epitaxy of high quality cuprous iodide (CuI) film grown on Si and sapphire substrates by molecular beam epitaxy. enhanced photoluminescence on the order of magnitude larger than that of GaN and continuous-wave optically pumped lasing were found in MBE grown CuI film. The intrinsic p-type characteristics of CuI were confirmed using an n-AlGaN/p-CuI junction that emits blue light. The discovery will provide an alternative way towards highly efficient optoelectronic devices compatible with both Si and III-nitride technologies.
关键词： molecular beam epitaxy,p-type semiconductor,light-emitting diodes,optoelectronic devices,cuprous iodide
更新于2025-09-19 17:13:59
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Ultrafast Charge Carrier Dynamics and Nonlinear Optical Absorption of InP/ZnS Core-Shell Colloidal Quantum Dots
摘要： Understanding of ultrafast carrier dynamics in InP/ZnS colloidal quantum dots (QDs) is essential for their optoelectronic applications. In this paper, we have successfully fabricated high-quality InP/ZnS core-shell QDs with quantum yield (QY) of 47%. Time resolved photoluminescence (TRPL), femtosecond transient absorption (TAS) measurements were performed to characterize the carrier injection, relax and transition process in the InP/ZnS QDs. It is found that the photoexcited carrier first injected to ZnS shell in 2 ps, then relaxed to alloyed layer between ZnS shell and InP core in 7.4 ps, next relaxed to different energy levels in InP core in about 170 ps, finally recombined by charged and neutral excitons transition in 4.1 ns and 26.7 ns, respectively. Additionally, the two-photon absorption (TPA) coefficient obtained from Z-scan measurement indicates that InP/ZnS QDs possess good nonlinearly optical properties. Our research is significant for the improvement and engineering of InP/ZnS QDs based materials for optoelectronic applications.
关键词： quantum dots,InP/ZnS,ultrafast carrier dynamics,nonlinear optical absorption,optoelectronic applications
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - 2D materials for optoelectronic devices
摘要： There is currently interest in 2D transition metal dichalcogenide (TMDC) materials, MX2 (M=Mo,W, X=S,Se,Te), for optoelectronic devices. These materials, when thinned down to a single layer, are an example of atomically thin truly two dimensional direct gap semiconductors. The reduction of dimensionality is a reason for strongly enhanced electron - electron interactions, which result in optical properties at room temperature dominated by neutral and charged excitons with binding energies orders of magnitude larger than room temperature and those found in standard compound semiconductors, e.g., GaAs quantum wells.
关键词： Bethe-Salpeter equation,optoelectronic devices,excitons,TMDC,2D materials
更新于2025-09-19 17:13:59
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Structure-dependent performance of single-walled carbon nanotube films in transparent and conductive applications
摘要： We investigate a complex relationship between structural parameters of single-walled carbon nanotubes (namely, mean length, diameter, and defectiveness) and optoelectrical properties (equivalent sheet resistance) of thin films composed of the nanotubes. We obtained a systematic dataset describing the influence of CO2 concentration and growth temperature. On the basis of the experimental results, we prove the high Raman peak ratio (IG/ID), length, and diameter of the nanotubes to decrease the equivalent sheet resistance of the nanotube-based film. The approach employed highlights the change in the nanotube growth mechanism at the temperature coinciding with the phase transition between α-Fe and γ-Fe catalyst phases. We believe this work to be of high interest for researchers working not only in the field of transparent and conductive films based on nanocarbons, but also for those who reveals the fundamentals of the nanotube growth mechanism.
关键词： aerosol CVD,nanotube growth mechanism,optoelectronic properties,transparent conductive films,single-walled carbon nanotubes
更新于2025-09-19 17:13:59
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Development of an optoelectronic nose based on surface plasmon resonance imaging with peptide and hairpin DNA for sensing volatile organic compounds
摘要： Nowadays, the analysis of volatile organic compounds (VOCs) is very important in various domains. In the last decades, electronic noses have emerged as promising alternatives to traditional analytical methods. Nevertheless, their wide use is still limited by their performances such as low selectivity. Herein, we developed an optoelectronic nose using virtually screened peptides and hairpin DNA (hpDNA) with improved selectivity as sensing materials and surface plasmon resonance imaging (SPRi) as the detection system. Thanks to the complementarity of their binding properties towards target VOCs, the obtained optoelectronic nose has very good selectivity, being able to discriminate not only between VOCs of different chemical families, but also VOCs of the same family with only 1-carbon difference. The combination of these sensing materials with SPRi is relevant for the development of optoelectronic nose with large sensor arrays and improved performances.
关键词： Volatile organic compounds,Surface plasmon resonance imaging,E-nose,Peptides,Optoelectronic nose,Hairpin DNA
更新于2025-09-19 17:13:59
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Selective synthesis of Bi2S3/BiOCl composites as electrode for high performance photodetector
摘要： Bi2S3/BiOCl composites were synthesized through a facile polyol refluxing process. The as-synthesized products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray powder diffraction (XRD), UV-vis diffuse reflectance spectrometer (UV-vis DRS). Herein, a junction was constructed by simply depositing a new Bi2S3/BiOCl nanocomposite film on FTO (Fluorine Doped Tin Oxide) substrate. The new Bi2S3/BiOCl-based photodetector exhibit high sensitivity, high on/off ratio of 330 times, fast rise time of 0.07 s and decay time of 0.07 s, which is the first report among all reported Bi2S3/BiOCl composites-based optoelectronic devices. Our results imply that the new type of photodetector based on Bi2S3/BiOCl composites has great potential in next generation high-performance optoelectronic devices. According to the sensing mechanism discussed, the good optoelectronic performance may be attributed to the Bi2S3/BiOCl composites as well as the schottky junction between FTO electrodes and Bi2S3/BiOCl products.
关键词： photodetector,polyol refluxing process,optoelectronic devices,Bi2S3/BiOCl composites
更新于2025-09-19 17:13:59
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Solar-stimulated optoelectronic synapse based on organic heterojunction with linearly potentiated synaptic weight for neuromorphic computing
摘要： We report an artificial optoelectronic synapse based on a copper-phthalocyanine (CuPc) and para-sexiphenyl (p-6P) heterojunction structure. This device features stable conductance states and their linear distribution in long-term potentiation (LTP) characteristic curve formed by continuous input light pulses. These superior synaptic characteristics originate from the fact that the number of photo-holes moving into the CuPc channel and photo-electrons being trapped at the p-6P/dielectric interface is constant at every light pulse. A single-layer neural network is theoretically formed with these optoelectronic synaptic devices and its feasibility is studied in terms of training/recognition tasks of the Modified National Institute of Standards and Technology digit image patterns. Owing to the excellent LTP characteristic and through the use of a unidirectional update method, its maximum recognition rate is as high as 78% despite the use of a single-layer network. This study is expected to provide a foundation for future studies on optoelectronic synaptic devices toward the implementation of complex artificial neural networks.
关键词： Solar-stimulated optoelectronic synapse,Neuromorphic computing,Band engineering,Pattern recognition,Organic heterojunction
更新于2025-09-19 17:13:59
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Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
摘要： The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.
关键词： photodetector,nano-bridge,multi-heterojunction,MoS2,optoelectronic performances
更新于2025-09-19 17:13:59
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Design of high-performance double quantum well vertical cavity transistor lasers with GRIN base region
摘要： Different confinement structures are analyzed to achieve higher optoelectronic performances for double quantum well vertical cavity transistor laser with graded index separate confinement heterostructure. Adding the drift component to the diffusion term of the current density and solving new sets of equations, modified electro-optic performances of the device is obtained. Band-gap engineering of the original structure predicts simultaneous improvements in both current gain (more than two times) and ?3 dB optical bandwidth (by 1.5 GHz). Other less critical, yet important, performance metrics including optical output power and threshold current (up to 20%) are enhanced due to applying graded layers of AlξGa1-ξAs in the base region.
关键词： Vertical cavity transistor laser,GRIN base region,Optoelectronic performance,Double quantum well,Band-gap engineering
更新于2025-09-19 17:13:59
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Laser-stimulated birefringence of Ga2O3-La2S2.95Se0.05 glasses for optical recording of information
摘要： We show an opportunity to change the birefringence of Ga2O3 – La2S2.95Se0.05 glasses doped by Er3+ and La3+ ions at λ = 1150 nm wavelength of cw He-Ne laser under illumination of the femtosecond laser. The variation of the refractive indices was found during illumination by 180 fs laser with frequency about 65 MHz (at wavelength λ = 1045 nm). The laser-stimulated birefringence has been explored versus temperature. The observed laser induced and temperature dependences of the birefringence con?rm a huge contribution of anharmonic phonon subsystems which is typical for chalcogenide glasses. Due to an occurrence of local space charge density asymmetry, the e?ciency of birefringence is enhanced. The anisotropy e?ect exists only during the illumination and is diminished during 10…12 s after switching o? of the photo-inducing laser treatment. There is observed also a correlation between the occurred grating patterns and the values of the birefringence.
关键词： Chalcogenide glasses,Optoelectronic materials,Laser-induced e?ects,Birefringence,Electronic and electrical engineering
更新于2025-09-19 17:13:59