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Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
摘要： In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic capacitance exhibiting very low CGS and CGD of 5.8 ×10-13 F/mm and 4.2×10-13 F/mm respectively to improve the cut off frequency (fT) from 17.5 GHz to 20 GHz. The discrete field plate suppresses the maximum electric field between gate and drain region to achieve the high breakdown voltage of 330 V. The maximum transconductance (gm) achieved is 275 mS/mm, ensuring the better DC operation of the device. The simulated results clearly show that, the discrete field plate HEMTs are superior in performance over conventional GaN FP- HEMTs for future high frequency and high power applications.
关键词： cut off frequency,electric field,breakdown voltage,field plate,GaN HEMT
更新于2025-09-04 15:30:14
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - L-Band Power Amplifier Design with Discrete GaN Transistor
摘要： In this paper, design and fabrication of a L band solid-state high power amplifier is reported. GaN Transistor is the main active high power element in this amplifier design. ADS simulation is used to design and optimize the input and output matching of the transistor. With these optimized matching networks, more than 100 watt output power is obtained. For the GaN transistor, bias sequencing circuits in the gate and drain terminals are controlled by a digital board. Furthermore, a control loop using software is utilized to achieve a better operation in the fabricated system.
关键词： Power amplifier,Output power,Gain,power added efficiency,GaN technology
更新于2025-09-04 15:30:14
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[IEEE 2018 25th IEEE International Conference on Image Processing (ICIP) - Athens, Greece (2018.10.7-2018.10.10)] 2018 25th IEEE International Conference on Image Processing (ICIP) - Near InfraRed Imagery Colorization
摘要： This paper proposes a stacked conditional Generative Adversarial Network-based method for Near InfraRed (NIR) imagery colorization. We propose a variant architecture of Generative Adversarial Network (GAN) that uses multiple loss functions over a conditional probabilistic generative model. We show that this new architecture/loss-function yields better generalization and representation of the generated colored IR images. The proposed approach is evaluated on a large test dataset and compared to recent state of art methods using standard metrics.
关键词： Convolutional Neural Networks (CNN),Infrared Imagery colorization,Generative Adversarial Network (GAN)
更新于2025-09-04 15:30:14
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[IEEE 2017 14th IEEE India Council International Conference (INDICON) - Roorkee (2017.12.15-2017.12.17)] 2017 14th IEEE India Council International Conference (INDICON) - Extraction and de-embedding of S-parameters using small-signal modeling for AlGaN/GaN HEMTs
摘要： At high frequency, various structures such as probe, pads and the parameter measurement of HEMT device. To precisely measure the device intrinsic performance, it is required to de-embed these parasitic effects. In this paper, only two structures based de-embedding procedure is used to reach to the device plane. This paper shows difference between measured and extracted S-parameters based on Berroth and Meras model, with de-embedding and without de-embedding. In this paper we use fabricated AlGaN/GaN HEMT on SiC transistor of 0.8(cid:117) 100 μm2 as reference device. Open and short structures fabricated and measured on the same substrate are used in this extraction procedure. Magnitude and phase comparison are also explained.
关键词： Two step de-embedding,HEMT,SiC substrate,GaN,open and short
更新于2025-09-04 15:30:14
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Enhancement of electrons confinement in AlGaN/AlN/GaN heterostructure using BGaN buffer with a small B-content
摘要： Since the small lattice constant a of wurtzite BGaN alloy and the good insulating property of its epitaxial layer, the use of the BGaN with a small B-content (0.005~0.02) as a buffer has potential to be a back-barrier for GaN high-electron mobility transistors (HEMTs). This paper presents an improved BGaN back-barrier HEMT structure (AlGaN/AlN/GaN/BGaN buffer) that does not create parasitic electron channel. The energy-band profile and carrier distribution of the BGaN buffer structure are studied by one-dimensional self-consistent simulation. The results show that the BGaN buffer with a very small B-content can provide a sufficient back-barrier to enhance electrons confinement, the principle of which is similar to the formation of back-barrier of AlGaN buffer. When the channel increases to a certain thickness, the low-density two-dimensional hole gas (2DHG) can even be induced at the GaN/BGaN interface by increasing the B-content from 0 to 0.02. Once the 2DHG is formed, continued increase in B-content would result in higher density 2DHG, while the effect on the energy-band profile, electrons confinement, and two-dimensional electron gas (2DEG) density becomes less pronounced.
关键词： HEMT,Back barrier,2DEG,2DHG,AlGaN/GaN,BGaN
更新于2025-09-04 15:30:14
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[IEEE 2018 48th European Microwave Conference (EuMC) - Madrid, Spain (2018.9.23-2018.9.27)] 2018 48th European Microwave Conference (EuMC) - A Full-Array-Grid-Compatible Wideband Tx/Rx Multipack Using Multifunctional Chips on GaN and SiGe
摘要： A next generation of RF sensor modules for multi-function AESA systems shall provide a combination of different operating modes, e.g. Radar, EW and Communications/Datalink within the same antenna frontend. Typical operating frequencies covering C-Band, X-Band and Ku-Band will require a bandwidth of > 10 GHz, here. As for the realisation of modern active electronically steered antennas (AESA) the Transmit/Receive (Tx/Rx) Modules have to match with geometry constraints a major challenge for these future multifunction RF sensor modules is given by the half-wavelength grid demand derived from the highest frequency with accordant need for grating lobe free Field of View. One key to overcome this geometry demand can be the reduction of the total MMIC chip area with a “high-level” integration of single chip based RF functions into new multifunctional MMICs realised in SiGe- and GaN-technology. Further channel width reduction can be achieved by realising Tx/Rx multipacks instead of single-channel Tx/Rx Modules.
关键词： Tx/Rx Module,Wideband,SiGe,Multifunctional,GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance
摘要： This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only 1.3 μA/mm at -20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.
关键词： high-electron-mobility transistor,gate leakage currents,GaN,distributed gates
更新于2025-09-04 15:30:14
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Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
摘要： We studied the drain current properties of an AlGaN/GaN multi-nano-channel (MNC) high electron mobility transistor (HEMT) fabricated on a sapphire substrate. We observed that the MNC HEMT exhibits the currents almost equal to those in the conventional planar device grown on the same chip. This result was unexpected since the actual gate width on the AlGaN surface in the case of MNC HEMT was only 20% of that for the planar device. In order to explain our experimental results, we performed a three dimensional (3D) simulation of the planar and MNC HEMTs using the TCAD Sentaurus software. Especially, we calculated the transfer characteristics of the MNC HEMT with a different nanochannel width and compared them with experimental data. The simulation results exhibited a good agreement with experimental ones. On this basis, we showed that the unusual behavior of the current in the MNC HEMT results from the enhancement of the effective electron velocity (ve) under the gate. In particular, we found that ve for the MNC HEMT was about 2.5 times higher than for the conventional HEMT, i.e., 2:44 (cid:1) 107 cm/s, which is close to the peak saturation velocity in GaN (2:5 (cid:1) 107 cm/s). Finally, we showed that such a strong enhancement of ve in the MNC HEMT case is due to the formation of the high electric ?eld in the nanochannel. The results obtained in this work are not limited only to MNC structures but they should also be useful in understanding the electric ?eld and electron velocity distribution in other AlGaN/GaN HEMTs with 3D nanochannels such as AlGaN/GaN FinFETs. Published by AIP Publishing.
关键词： high electron mobility transistor,electron velocity,electric field,AlGaN/GaN,multi-nano-channel
更新于2025-09-04 15:30:14
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Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment
摘要： Here we have demonstrated the profound impact of surface potential on the luminescence of an array of InGaN/GaN nano-disk in a wire heterostructure. The change in surface potential is brought about by a combination of dry and successive wet-processing treatments. The photoluminescence (PL) properties are determined as a function of size and varying surface potential. The change in hole bound state energy due to parabolic potential well near the side-wall is found to be the dominating factor. The PL peak position, full width at half-maximum (FWHM), strain relaxation and integrated PL intensity are studied as a function of incident power and temperature. The devices demonstrate higher integrated PL intensity and slope efficiency.
关键词： exciton binding energy,photoluminescence,QCSE,nano-disk,surface potential,strain relaxation,InGaN/GaN,quantum confinement
更新于2025-09-04 15:30:14
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Magnetism of Eu-doped GaN modulations by spinodal nanodecomposition
摘要： By the Monte Carlo method, magnetic properties have been investigated for Eu-doped GaN involving internal nanostructures induced by nanoscale spinodal decomposition, where these nanostructures are spontaneously or artificially formed. In the present simulations, hysteretic and nonhysteretic magnetization curves are observed in the systems with the large-sized and small-sized nanostructures, respectively. These nanostructures affect the blocking temperatures as well. Furthermore, they influence temperature-dependent energy barriers of spin flipping; therefore, the simulations suggest that the magnetization is thermally stable. However, we observe that the blocking temperatures are smaller than the experimental values, which may be due to atomic vacancies.
关键词： magnetic properties,blocking temperatures,Eu-doped GaN,Monte Carlo method,spinodal decomposition
更新于2025-09-04 15:30:14