Determination of Phonon Deformation Potentials in Carbon-Doped Silicon

摘要： Carbon-doped silicon (Si:C) is used as a stressor to the channel of n-type metal oxide semiconductor field-effect-transistor (MOSFET). In this study, we determined PDPs, phonon deformation potentials, (p and q) of Si:C to realize evaluation of anisotropic biaxial stress by using water-immersion Raman spectroscopy. Raman peak shift in longitudinal and transverse optical (LO and TO) phonon modes were measured by water-immersion Raman spectroscopy. Furthermore, in-plane and out-of-plane strain were measured by X-ray diffraction (XRD). Based on the Raman shift and the in-plane strain, p and q in each sample were derived. As a result, it took a different value from pure-Si, and the PDPs tended to increase as the C concentration increased.