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Flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio
摘要： In this work, flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio are demonstrated. The Ga2O3 films are obtained by the RF magnetron sputtering method on flexible polyimide (PI) substrates and the results demonstrate that all the films grown under various temperatures are amorphous. When the incident light wavelength is less than 254 nm, the incident light is effectively absorbed by the Ga2O3 film. By controlling the growth temperature of the material, the responsivity and photo-to-dark current ratio of the corresponding metal-semiconductor-metal photodetectors are significantly improved. At growth temperature of 200 oC, the current under 254 nm illumination obtains 396 nA at voltage of 20 V (corresponding responsivity is 52.6 A/W), the photo-to-dark current ratio is more than 105, and the external quantum efficiency reaches 2.6×10 4 %, which is among the best reported Ga2O3 ultraviolet photodetectors including the devices on the rigid substrates. After the bending and fatigue tests, the flexible detectors have negligible performance degradation, showing excellent mechanical and electrical stability.
关键词： solar blind photodetector,responsivity,photo-to-dark current ratio,Ga2O3,flexible device
更新于2025-09-19 17:13:59
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Ultra-Robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa) <sub/>2</sub> O <sub/>3</sub> /GaN with High-Performance in Temperature Fluctuations
摘要： A strategy of adopting Ga2O3 alloyed with Al element to reduce the oxygen vacancy defect density and to enhance the interface barrier height of Ga2O3 heterojunction is proposed to fabricate deep-UV photovoltaic detectors with high thermal stability, high photoresponsivity and fast response speed. Here, a graphene/(AlGa)2O3/GaN device with a photoresponsivity of ~20 mA/W, a rise time of ~2 μs and a decay time of ~10 ms is presented at 0 V bias. At the working temperature of 453 K, the device still exhibits a photo-to-dark current ratio (PDCR) of ~1.8×103, which is 1-2 orders of magnitude higher than that of reported high temperature deep-UV film detectors. By comparing the formation energy of oxygen vacancy defects and the interface barrier height of heterojunction at different temperatures in graphene/Ga2O3/GaN and graphene/(AlGa)2O3/GaN systems respectively, the strategy of synthesizing (AlGa)2O3 ternary composite alloy is proved reliable for fabricating high performance deep-UV photovoltaic detectors. The method proposed in this paper can provide reference for the preparation of deep-UV photovoltaic detectors with high photoresponsivity and thermal stability in the future.
关键词： deep-UV,high temperature,photovoltaic,(AlGa)2O3,high photo-to-dark current ratio
更新于2025-09-11 14:15:04