- 标题
- 摘要
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- 实验方案
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Design and fabrication of a high-precision 360?° laser receiver for leveling applications
摘要： The laser technique based sensors and actuators can provide many superior properties as noncontact, high sensitivity, remote operation, and reliable performance in contrast to other mechanical and electrical techniques. In this paper, we design and fabricate a high-precision 360(cid:1) laser receiver for leveling, especially for agricultural and construction field. The laser receiver is primarily composed of photoelectrical conversion module, electrical signal processing module, and display panel module. Based on the centroid method, the detection error of the laser receiver with respect to laser source and silicon photocell array, is analyzed and simulated. The design and fabrication process are described in detail, including the overall structure and electrical circuits. Furthermore, this fabricated laser receiver is demonstrated to be high precision through several static and dynamic tests in the distance of 10 and 50 m. Besides, this fabricated laser possesses wireless transmission function, which provides much convenient for users in remote operation.
关键词： leveling,silicon photocell,laser receiver,centroid method
更新于2025-09-23 15:21:01
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High quantum yields generated by a multi-band quantum dot photocell
摘要： We perform the quantum yields in a multi-band quantum dot (QD) photocell via doping an intermediate band (IB) between the conduction band (CB) and valence band (VB). Under two different sub-band gap layouts, the output power has a prominent enhancement than the single-band gap photocell and the achieved peak photo-to-charge efficiency reaches to 74.9% as compared to the limit efficiency of 63.2% via the IB approach in the theoretical solar cell prototype. The achieved quantum yields reveal the potential to improve efficiency by some effective theoretical approaches in the QD-IB photocell.
关键词： photo-to-charge efficiency,Quantum yields,a multi-band quantum dot photocell
更新于2025-09-12 10:27:22
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Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction
摘要： It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.
关键词： photocell,silicon,nickel,lifetime,collection coefficient,thermal annealing,clusters,doping
更新于2025-09-12 10:27:22