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(3-phenylpyridin-1-ium)SbI4: Coulomb interaction-assembled Lead-free hybrid perovskite-like semiconductor
摘要： The environmental toxicity of Pb in inorganic-organic hybrid perovskite presents a major hurdle to commercialization, which trigger intense research on exploring Pb-free alternatives. Soft interaction, especially Coulomb interaction not only enriching the synthesis strategy but endowing unique property to the derived materials, is appealing for constructing Pb-free alternatives, however is less reported. We herein demonstrate the construction of a Sb-based hybrid perovskite-like semiconductor (3-phenylpyridin-1-ium)SbI4 (denoted as 3ppi-SbI4) via the “Coulomb interaction strategy”. Therein, the zigza (SbI4)– chains interact with the 3ppi countercations through Coulomb interaction-only in the crystal lattice. It has good moisture, sunlight and UV light stabilities. Further, 3ppi-SbI4 exhibits excellent light absorption, direct band-gap feature, good photoconduction, and excellent repeatability of photocurrent, which all imply its potential as a Pb-free light-absorbing candidate for optoelectronic application. Theoretical calculations disclose that the photo response is mainly ascribe to the electron transitions within (SbI4)– chains, as well as between inorganic and organic moieties.
关键词： hybrid perovskite,photoconduction,Antimony,Coulomb interaction,semiconductor
更新于2025-09-12 10:27:22
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Modifications in structural, optical and electrical properties of nanocrystalline CdO: role of sintering temperature
摘要： Present report deals with the synthesis of nanocrystalline cadmium oxide (CdO) using low-cost acetate precursor based modified sol–gel technique. Final product was sintered at different temperatures and studied for their structural, optical and electrical properties. In this present work, we report the sintering temperature-dependent structural, optical and electrical properties of nanocrystalline cadmium oxide (CdO) grown by cost effective sol–gel method. Structural properties of CdO materials were investigated by X–ray diffraction (XRD) which reveals the crystalline phase of the samples without any detectable impurity within the range of measurements. Crystallite size (CS), calculated using Scherer’s formula, is found in the range of nanometer (<100 nm) and increases with increasing sintering temperature. Average crystallite size of all CdO nanocrystals were estimated using the William–Hall (W–H) plots from XRD patterns. Furthermore, transmission electron microscopy (TEM) images were captured to check the crystallinity and particle growth of the samples. The optical properties of nanocrystalline CdO were studied by using UV–Visible (UV–Vis) absorption spectrum. High absorption has been observed for nanocrystalline CdO sintered at lower temperatures. The band gap of nanocrystalline CdO was calculated by using Tauc’s law where band gap increases with increasing sintering temperature. The electrical properties of the samples were studied by performing dielectric and AC conductivity measurements. It is observed that dielectric constant decreases with increase in frequency and sintering temperature. Variation in AC conductivity with light and sintering temperature has been discussed in detail.
关键词： Nanocrystalline,Photoconduction,Sol–gel synthesis,Sintering temperature
更新于2025-09-09 09:28:46
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Anomalous Photoconduction of Low-Temperature Charge-Density Wave in NbS3-II as a Physical Basis of a Method for Detection of Weak Signals
摘要： The effect of IR radiation on photoconduction of two charge-density waves (CDWs) in the monoclinic phase of quasi-1D conductor NbS3 (NbS3-II) is studied. For the CDW-1 that emerges at a temperature of ТР1 = 360 К, threshold field Et increases with irradiation power W. For CDW-2 that emerges at a temperature of TP2 = 150 K, field Et decreases due to IR irradiation, which proves anomalous character of CDW-2 and indicates direct photoactivation of its sliding. Extremely high sensitivity of the measured signal to IR radiation is obtained using stimulation of the CDW coherence by the microwave field.
关键词： NbS3,microwave field,threshold field,photoconduction,charge-density waves,IR radiation
更新于2025-09-09 09:28:46
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Current‐Enhanced Broadband THz Emission from Spintronic Devices
摘要： An ultra-broadband terahertz (THz) emitter covering a wide range of frequencies from 0.1 to 10 THz is highly desired for spectroscopy applications. So far, spintronic THz emitters have been proven as one class of efficient THz sources with a broadband spectrum while the performance in the lower THz frequency range (0.1–0.5 THz) limits its applications. In this work, a novel concept of a current-enhanced broad spectrum from spintronic THz emitters combined with semiconductor materials is demonstrated. A 2–3 order enhancement of the THz signals in a lower THz frequency range (0.1–0.5 THz) is observed, in addition to a comparable performance at higher frequencies from this hybrid emitter. With a bias current, there is a photoconduction contribution from semiconductor materials, which can be constructively interfered with the THz signals generated from the magnetic heterostructures driven by the inverse spin Hall effect (ISHE). These findings push forward the utilization of metallic heterostructure-based THz emitters on the ultra-broadband THz emission spectroscopy.
关键词： spintronic devices,broadband spectrum,photoconduction,terahertz emitters
更新于2025-09-04 15:30:14