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Nanoplasmonic Enhanced High-performance Metastable Phase α-Ga2O3 Solar-blind Photodetector
摘要： In this work, nanoplasmonic enhanced α-Ga2O3 solar-blind photodetectors with interdigital structure were fabricated on sapphire. By introducing Al nanoparticles (NPs) onto the device surface, the photodetector obtained a significant increase in responsivity at solar-blind region, and the response peak located at 244 nm reached 3.36 A/W under applied voltage of 5 V. Compared with the responsivity at 320 nm, the response ratio exceeds 240, demonstrating a superior solar-blind cut-off edge. It also presents that the photocurrent was dramatically increased under the 254 nm ultraviolet irradiation for the enhanced device while the dark current remains below 1 pA at 20 V. To explicitly elucidate the enhancement effects by Al NPs under ultraviolet illumination, Kelvin probe force microscopy was employed and directly revealed the physical mechanism of surface plasmon oscillation which promoted the formation of localized electric fields on α-Ga2O3. In addition, we illustrated the effects of interdigital spacing on device performances through experimental measurements and theoretical calculations. These results not only provide direct evidences for Al nanoplasmonic enhancement on α-Ga2O3 device, but also facilitate design and fabrication of solar-blind photodetectors.
关键词： photodetector,nanoplasmonic,α-Ga2O3,solar-blind,interdigital
更新于2025-09-16 10:30:52
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Si-based GeSn photodetectors towards mid-infrared imaging applications
摘要： The GeSn detector offers the high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: i) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 μm. The maximum D* of 1.1×1010 cm?Hz1/2?W-1 measured at 77 K is comparable to that of commercial extended-InGaAs detectors; ii) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. This work is a major step towards Si-based mid-infrared photodetectors for imaging applications.
关键词： surface passivation,GeSn photodetector,high Sn composition,imaging,mid-infrared
更新于2025-09-16 10:30:52
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A facile method to synthesize two-dimensional CsPb2Br5 nano-/micro-sheets for high-performance solution-processed photodetectors
摘要： In this paper, a facile method to synthesize two-dimentional (2D) all-inorganic CsPb2Br5 nano-/micro-sheets at room temperature and their application as the active layer in solution-processed high-performance photodetectors are presented. The obtained CsPb2Br5 nano-/micro-sheets showed a photoluminescence emission peak at 522 nm with a narrow full-width-at-half-maximum of ~17 nm, showing its high color purity, and an absorption peak at 307 nm with a shoulder peak at 339 nm. Then, the obtained CsPb2Br5 nano-/micro-sheets were used as the active layer in photoconductive photodetector and a high specific detectivity of 1.0×1012 Jones with a photoresponsivity of 0.02 A/W and an ultra-low dark current of ~10-12 A under 16 μW/cm2 405 nm illumination were obtained from photoconductive photodetector Au/CsPb2Br5(85μm)/Au. Further, the physical mechanism for the enhanced performance is discussed. Therefore, it provides a new method to suppress dark current for high-performance CsPb2Br5 photodetectors.
关键词： Solution-processed,Low dark-current,CsPb2Br5 nano-/micro-sheets,Photodetector
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE MTT-S International Wireless Symposium (IWS) - Guangzhou, China (2019.5.19-2019.5.22)] 2019 IEEE MTT-S International Wireless Symposium (IWS) - Tunable Terahertz Absorbers and Photodetectors based on Graphene
摘要： This work will address the recent developments of graphene-based tunable terahertz absorber and photodetector for potential applications.
关键词： absorber,photodetector,intersubband,graphene,terahertz
更新于2025-09-16 10:30:52
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High performance near infrared photodetector based on in-plane black phosphorus p-n homojunction
摘要： Black phosphorus (BP) has been considered as an appealing candidate for broadband photodetection from the visible to the infrared part of the spectrum owing to its tunable direct band gap and high carrier mobility. However, compared with other typical materials, the photoresponsivity of BP devices is rather weak. In this work, a near infrared photodetector with high performance based on in-plane BP p-n homojunction was investigated. The strong built-in electric field of the p-n junction can be modulated through bias and gate voltage, where the photo generated electron-hole pairs can be effectively separated, thus, leads to the enhanced photocurrent and faster photoresponse. Compared with the pristine BP, the photoresponsivity of the BP p-n homojunction under 1550 nm displays a 50-fold increment. The response time of the in-plane BP p-n homojunction photodetector exhibits two orders of magnitude improvement than that of the pristine BP and other lateral homogeneous BP p-n junction. Fascinatingly, the BP p-n photodetector also displays visible-infrared dual-band detection with well separated spectral response, opening up a feasibility of the intelligent identification of infrared targets.
关键词： In-plane homojunction,Dual-band detection,Near infrared photodetector,Black Phosphorus
更新于2025-09-16 10:30:52
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - A High-Performance Self-Powered UV Photodetector Based on Self-Doping TIO <sub/>2</sub> Nanotube Arrays
摘要： In this paper, we present a high-performance self-powered ultraviolet (UV) photodetector using electrochemical micro-porous-channel arrays based on a cost-effective and environment-friendly black TiO2 nanotube arrays (BTNAs) and polysulfide (S2-/Sx2-) electrolyte. By self-doping TiO2 the concentration and lifetime of UV photo-generated carriers are increased due to increasing oxygen vacancies and Ti3+ defects in BTNAs, effectively enhancing the carrier transport and multiple exciton effect of carriers, and thus the self-powered UV photodetector based on electrochemical micro-porous-channel arrays demonstrates a high photoresponsivity of ~22 mA/W and high-speed photoresponse of ~4 ms in rise and decay time.
关键词： TiO2 nanotube arrays,self-powered sensors,electrochemical sensors,ultraviolet photodetector
更新于2025-09-16 10:30:52
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Amorphous ZnO/PbS quantum dots heterojunction for efficient responsivity broadband photodetectors
摘要： The integration of lead sulfide quantum dots (QDs) with high conductivity material that is compatible with a scalable fabrication is an important route for the applications of QDs based photodetectors. Herein, we firstly developed a broadband photodetector by combining amorphous ZnO and PbS QDs forming a heterojunction structure. The photodetector showed detectivities up to 7.9x1012 jones and 4.1x1011 jones under 640 nm and 1310 nm illumination, respectively. The role of oxygen background pressure on the electronic structure of ZnO films grown by pulsed laser deposition was systematically studied, and it was found to play an important role on the conductivity, associated to the variation of oxygen vacancy concentration. By increasing the oxygen vacancy concentration, the electron mobility of amorphous ZnO layers dramatically increased and work function decreased, which were beneficial for the photocurrent enhancement of ZnO/PbS QDs photodetectors. Our results provide a simple and highly scalable approach to develop broadband photodetectors with high performance.
关键词： oxygen vacancy,amorphous ZnO,broadband photodetector,mobility,heterojunction
更新于2025-09-16 10:30:52
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Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering
摘要： Recently, palladium diselenide (PdSe2), with a unique low-symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herein, we studied the optoelectronics transport characteristics of high-quality PdSe2-based photodetectors with different thicknesses. We demonstrated an enhancement of PdSe2 photodetector performance owing to the band engineering via a thickness reduction. The highest responsivity of 5.35 A/W can be achieved with an external quantum efficiency of 1250% at the wavelength of 532 nm. We attribute such high performance in photoresponsivity to the high valley convergence in the conduction band of layered PdSe2, in agreement with first-principles calculation. Our results offer new insight into the layer-dependent optoelectronic properties of PdSe2 and open new avenues in engineering next-generation 2D-based electronics and optoelectronics.
关键词： photoresponsivity,palladium diselenide,photodetector,band convergence
更新于2025-09-16 10:30:52
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Recent Progress in Waveguide-Integrated Graphene Photonic Devices for Sensing and Communication Applications
摘要： Graphene is a two-dimensional material with numerous intriguing optical properties, such that graphene photonic devices have attracted great interest for sensing and communication applications. However, surface-illuminated graphene photonic devices usually suffer from weak light-matter interactions due to the atomic-layer thickness of graphene, seriously limiting the performances of such devices. To tackle this problem, waveguide-integrated graphene photonic devices have been demonstrated since 2010, which offer the advantage of much longer interaction length between the evanescent field of the optical waveguide and graphene than the surface-illuminated devices. Moreover, the fabrication of waveguide-integrated graphene photonic devices is compatible with CMOS technology, allowing potentially low-cost and high-density on-chip integration. To date, a tremendous interest is growing in the hybrid integration platform composed of graphene and silicon photonic integrated circuits. In this paper, we review the recent progress in waveguide-integrated graphene photonic devices and their applications in sensing and communication.
关键词： electro-optic modulator,saturable absorption,graphene,photodetector,silicon photonics
更新于2025-09-16 10:30:52
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Chiral Reduced-Dimensional Perovskite for Efficient Flexible Circularly Polarized Light Photodetector
摘要： Advancements in exploring new chiral perovskites are highly demanded to improve the circular polarized light (CPL) detection efficiency to date. Reduced-dimensional (quasi-2D) perovskites thus emerged as the most promising candidates due to its appealing characteristics. We herein reported new chiral quasi-2D perovskite single crystals (SCs) synthesis, and investigate their CPL detecting capability for the first time. We proved quasi-2D chiral perovskites, [(R)-β-MPA]2MAPb2I7 ((R)-β-MPA = (R)-(+)-β-methylphenethylamine, MA = methylammonium), do possess intrinsic chirality and have the capability to distinguish different polarization states of CPL photons. Corresponding quasi-2D perovskite SCs CPL photodetector exhibit excellent detection performance. In particular, our device responsivity is almost one order of magnitude higher than the best reported 2D perovskite CPL detectors to date. On this basis, we carefully modulate the film’s crystallization dynamics to facilitate its carrier transport. We prove that parallelly oriented perovskite films with homogeneous energy landscape are crucial to maximize the device’s carrier collection efficiency. The obtained responsivity and linear dynamic range (LDR) of this flexible chiral quasi-2D perovskite thin-film photodetector are comparable with the best reported results to date. The photodetector also exhibits superior mechanical flexibility and durability, representing one of the most sensitive and robust CPL photodetector to date.
关键词： circular polarized light,photodetector,reduced-dimensional perovskites,chiral perovskite,crystallization dynamics
更新于2025-09-16 10:30:52