- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors
摘要： Here, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal?semiconductor?metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal?oxide?semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity.
关键词： titanium nitride,internal photoemission,CMOS-compatible,waveguide-integrated plasmonic Schottky photodetector,signal-to-noise ratio
更新于2025-09-16 10:30:52
-
Au Grating on SiC Substrate: Simulation of High Performance Plasmonic Schottky Barrier Photodetector in Visible and NIR Regions
摘要： Plasmonically enhanced light absorption in Schottky barrier photodetectors (PDs) can be achieved by engineering metallic nanostructures. In this context, gold (Au) gratings on titanium (Ti)/silicon carbide (SiC) based Schottky barrier is proposed in this work for photodetection application. Further, the effects of various grating parameters and incident angle on absorbance are demonstrated. The grating based structure is able to provide ~85% incident light absorption leading to a significantly high responsivity value as compared with that of conventional (without metallic grating) structure. High unbiased responsivity values of 4.396 mA/W and 2.496 mA/W are obtained for Au/Ti/6H-SiC Schottky barrier PD at wavelengths of 694.5 nm and 1035 nm, respectively based on Fowler’s model. In view of advanced properties of SiC, the present work will open new opportunities for plasmonic PDs based on SiC platform.
关键词： plasmons,Schottky barrier,photodetector,responsivity,gold gratings
更新于2025-09-16 10:30:52
-
Self-powered perovskite/CdS heterostructure photodetectors
摘要： Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications. Here, high-performance photodetectors based on CH3NH3PbI3 (MAPbI3)/CdS heterostructures, are demonstrated. The resulting self-powered MAPbI3/CdS photodetectors show excellent operating characteristics including a maximum detectivity of 2.3×1011 Jones with responsivity of 0.43 A/W measured at 730 nm. A temporal response time of less than 14 ms was achieved. The mechanisms of charge separation and transport at the interface of the MAPbI3/CdS junction were investigated via conductive atomic force microscopy (C-AFM) and photoconductive atomic force microscopy (PC-AFM). Obtained results show that grain boundaries exhibit higher photocurrent than flat regions of the top perovskite layer, which indicates that excitons preferentially separate at the grain boundaries of the perovskite thin film, i.e. at the edges of the MAPbI3 crystals. The study of the photoelectric mechanism at the nanoscale suggests the device performance could potentially be fine-tuned through grain boundary engineering, which provides essential insights for the fabrication of high-performance photodetector. The demonstrated self-powered photodetector is promising for numerous applications in low-energy consumption optoelectronic devices.
关键词： perovskite,photodetector,heterojunction,photovoltaic,self-powered photodetectors,photoconductive atomic force microscopy
更新于2025-09-16 10:30:52
-
GaSe/MoS <sub/>2</sub> Heterostructure with Ohmica??Contact Electrodes for Fast, Broadband Photoresponse, and Selfa??Driven Photodetectors
摘要： In this letter, the vertically-stacked GaSe/MoS2 heterostructures with indium tin oxide (ITO) and Ni/Au as contact electrodes are successfully fabricated, respectively. The GaSe/MoS2 heterostructure exhibits a broadband photoresponse covering the range of visible to near-infrared spectra at room temperature without external bias voltage. When ITO serves as contact electrodes, a high rectification ratio, i.e., 1.5 × 104 at VDS = ±1 V, and an excellent photoelectric performance, i.e., responsivity of ≈0.67 A W-1, specific detectivity of ≈2.3 × 1011 cm Hz1/2 W-1 and external quantum efficiency of ≈160% at the wavelength of 520 nm is achieved. Moreover, the GaSe/MoS2 heterostructure with Ohmic-contact ITO electrodes demonstrates a faster response time of 155 μs, which is 4 times faster than the GaSe/MoS2 heterostructure with Ni/Au electrodes and about 300 times faster than previous reports. These results reveal the presence of an abrupt p–n junction between GaSe and MoS2 and significant role of electrode-contact mode in determining the photoelectric properties of GaSe/MoS2 heterostructure.
关键词： photoresponse,GaSe/MoS2 heterostructure,self-driven photodetector,Ohmic-contact
更新于2025-09-16 10:30:52
-
Influence of PEIE interlayer on detectivity of red-light sensitive organic non-fullerene photodetectors with reverse structure
摘要： In this work we analyse an influence of 80 % ethoxylated polyethyleneimine (PEIE) interlayer modifying the ITO electrode work function on the detectivity and time response of the red-light sensitive photodetectors based on donor-acceptor copolymer HFQx-T (where HFQx stands for hexafluoroquinoxaline acceptor units, and T for benzodithiophene derivative donor blocks) blended with acceptor ITIC (with indacenodithieno[3,2-b]thiophene as central donor unit and 2-(3-oxo-2,3-dihydroinden-1-ylidene) malononitrile as acceptor end groups). Modification of ITO electrode by PEIE interlayer allows to construct the photodiode with reversed structure which results in low dark current and high detectivity of the photodetector. The 3.5 nanometres thick PEIE interlayer causes strong reduction of the dark current in comparison to the dark current measured in classical photodiode structure; this allowed to obtain remarkably high detectivity, exceeding 2×1013 Jones. However, a presence of the PEIE interlayer has significantly lengthen the photodiode time response. We demonstrate that when designing the photodiodes with reversed structure, one should consider compromise between the required detectivity and the time response of the photodetector.
关键词： organic photodiode with reverse structure,ethoxylated polyethyleneimine,photodetector detectivity,photodetector time response,PEIE,organic photodetector
更新于2025-09-12 10:27:22
-
Porous single-wall carbon nanotube templates decorated with all-inorganic perovskite nanocrystals for ultra-flexible photodetectors
摘要： As an inevitable optoelectronic material with unique properties, halide perovskites attracted increasing attention in recent years. Meanwhile, hybridization of nanostructured perovskites with one-dimensional (1D) or two-dimensional (2D) functional materials has exhibited unique applications in nanotechnology. In this communication, a highly conducting porous single-wall carbon nanotube (p-SWCNT) template decorated with phase-pure CsPbBr3 nanocrystals by simple solution-phase technique was demonstrated, and the ultra-flexible photodetector Au/p-SWCNT:CsPbBr3/Au showed high sensitivity even in highly bending state. Also, the mechanism of wetting CsPbBr3 along p-SWCNT and the detailed fabrication process for ultra-flexible photodetectors were highlighted. The direct contact (in-situ) on p-SWCNT by crystallization of perovskite precursor can enhance the charge transfer at their interface effectively. At applied bias of +5 V, the optimized photodetector Au/p-SWCNT:CsPbBr3/Au exhibits a maximum photoresponsivity of 41.0 AW-1 with a specific detectivity of 1.67×1012 Jones under an incident 232 μW/cm2 520 nm illumination. In addition, it exhibits excellent mechanical and electrical properties even under high strain (i.e. bending angle up to -17°) and recovers the original performance after repeated bending cycles upto 1000 times. Our experimental results showed that such a hybrid materials provide a promising method for rigid and flexible optoelectronic devices.
关键词： Porous single-wall carbon nanotube (p-SWCN),inorganic perovskite nanocrystals,flexible photodetector,CsPbBr3,visible light photodetector
更新于2025-09-12 10:27:22
-
Edge-contact large area hetero-structure fast photodetector utilizing two-dimensional r-GO on three-dimensional GaN material interface
摘要： Here we report a contact geometry for directly accessing the hetero-structured interface formed at the junction of a two-dimensional and three-dimensional material. This type of edge contact proves to be very efficient to improve the performance of photosensitive devices intrinsically having slow response and persistent photoconductivity under biased conditions. The device demonstrates fast photoresponse speeds of <40 ms range under ?5 V and +5 V.
关键词： Fast Response,Contact,Heterojunction,2D materials,Photodetector
更新于2025-09-12 10:27:22
-
Fast Response of UV Photodetector Based on Ag Nanoparticles Embedded Uniform TiO2 Nanotubes Array
摘要： Titanium dioxide (TiO2) has drawn a potential research interest for ultraviolent (UV) photodetector (PD) applications because of its tunable bandgap in UV absorption region, low-absorption coefficient in visible region, n-type semiconducting property, and excellent chemical stabilities. In this study, attempts were made to explore the performances of TiO2 nanostructures such as nanotubes (NTs) and nanorods (NRs) based UV PDs embedded with 23 nm plasmonic silver (Ag) nanoparticles (NPs), which offer the local surface plasmonic resonance or near-field enhancement. The vertical TiO2 NTs and NRs with high uniformity and height of 1 μm were successfully synthesized using simple and low-cost electrochemical anodization and hydrothermal growth techniques, respectively onto Ti substrates. From the x-ray diffraction analysis, it was ascertained that the anatase phase has been formed for NTs, whereas the rutile phase dominated the NRs. All these nanostructures were characterized by various material characterization techniques such as field emission scanning electron microscopy, x-ray photoelectron spectroscopy, UV-vis-NIR and Raman spectroscopy to investigate their surface and structural morphologies and absorption spectra. Efforts were put to fabricate Ag/ (with or without Ag NPs) TiO2 nanostructures/ Ti based UV PDs, where Ag has been utilized as top electrode and Ti served the purpose for bottom electrode. The electrical characteristics such as current-voltage, responsivity, detectivity, external quantum efficiency, rise and decay times were systematically investigated under 365 nm UV light illumination. The TiO2 NTs anchored with the Ag NPs offer better photocurrent, responsivity (1.37 AW-1), detectivity (5.18 x 1010 Jones), external quantum efficiency (465.42%), rise (0.43 s) and decay (0.70 s) times. In order to have better insight on the device operational principle, a band diagram was proposed and it was realized that desorption of oxygen ions, increment of free electron carriers, and localized surface plasmonic effect were responsible for obtaining improved photoresponse.
关键词： nanoparticles,UV photodetector,responsivity
更新于2025-09-12 10:27:22
-
Photodetector Based on Spontaneously Grown Strongly Coupled MAPbBr3/N-rGO Hybrids Showing an Enhanced Performance
摘要： Recently, metal-halide perovskites have emerged as a candidate for optoelectronic applications such as photodetectors. However, the poor device performance and instability have limited their future commercialization. We herein report the spontaneous growth of perovskite/N-rGO hybrid structures using a facile solution method and their application for photodetectors. In the hybrid structures, perovskites were homogeneously wrapped by N-rGO sheets through strong hydrogen bonding. The strongly coupled N-rGOs facilitate the charge carrier transportation across the perovskite crystals, but also distort the surface lattice of the perovskite creating potential barrier for charge transfer. We optimize the addition of N-rGO in the hybrid structures to balance the interfacial structural distortion and the inter-crystal conductivity. A high-performance photodetection up to 3 × 104 A/W, external quantum efficiency (EQE) exceeding 105 % and detectivity up to 1012 Jones were achieved in the optimal device with the weight ratio between perovskites and N-rGO to be 8:1.5. The underlying mechanism behind the optimal N-rGO addition ratio in the hybrids has also been rationalized via time-resolved spectroscopic studies as a reference for future application.
关键词： hydrogen bonding,perovskite/N-rGO,hybrid material,photodetector,time-resolved spectroscopy
更新于2025-09-12 10:27:22
-
[IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Design and Characterization of Monolithic Microring Resonator based Photodetector in 45nm SOI CMOS
摘要： This paper presents a characterization and a compact model of microring resonator based photodetector designed in a monolithic silicon-photonic platform. As these detectors are inherently wavelength selective they can potentially enable fully integrated DWDM optical receivers. The detector makes use of resonance enhancement in a microring by integrating 30 interleaved lateral P-N junctions along a 5μm radius microring cavity. The performance measurements reveal a peak responsivity of 0.6 A/W at 1270nm with <1nA dark current and <20fF junction capacitance at -7.5V reverse bias.
关键词： DWDM,silicon-photonics,monolithic,microring resonator,SiGe,integrated heater,CMOS,photodetector,SOI
更新于2025-09-12 10:27:22