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In-doped As2Se3 thin films studied by Raman and X-ray photoelectron spectroscopies
摘要： Amorphous In-doped As2Se3 films with nominal indium contents x up to 7 at. % were prepared by thermal evaporation. Atomic force microscopy studies confirm the uniform film structure with a surface roughness near 5 nm, noticeably higher than for similarly prepared undoped As2Se3 film. X-ray photoelectron spectroscopy (XPS) studies enabled the chemical composition of the films to be examined. As follows from the XPS data, the In content in the film strongly decreases with the film depth. For films with x ≥ 2 at.%, Raman features attributed to transverse and longitudinal optical phonons of InAs are revealed in the Raman spectra as an evidence for the formation of InAs nanocrystallites in the As2Se3:In film under laser illumination.
关键词： X-ray photoelectron spectroscopy,amorphous,film,Raman scattering,atomic force microscopy,semiconductor nanocrystals
更新于2025-09-04 15:30:14
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Quantitative determination of a model organic/insulator/metal interface structure
摘要： By combining X-ray photoelectron spectroscopy, X-ray standing waves and scanning tunneling microscopy, we investigate the geometric and electronic structure of a prototypical organic/insulator/metal interface, namely cobalt porphine on monolayer hexagonal boron nitride (h-BN) on Cu(111). Specifically, we determine the adsorption height of the organic molecule and show that the original planar molecular conformation is preserved in contrast to the adsorption on Cu(111). In addition, we highlight the electronic decoupling provided by the h-BN spacer layer and find that the h-BN–metal separation is not significantly modified by the molecular adsorption. Finally, we find indication of a temperature dependence of the adsorption height, which might be a signature of strongly-anisotropic thermal vibrations of the weakly bonded molecules.
关键词： hexagonal boron nitride,X-ray standing waves,X-ray photoelectron spectroscopy,cobalt porphine,Cu(111),scanning tunneling microscopy,organic/insulator/metal interface
更新于2025-09-04 15:30:14
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Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN
摘要： We have developed high-throughput depth-resolved electronic structure measurements using hard X-ray photoelectron spectroscopy (HAXPES) combined with X-ray total reflection (TR). By utilizing a steep change of the X-ray attenuation length around the TR condition, we controlled the effective inelastic mean-free-path of photoelectrons from >2 to >12 nm in HAXPES. We applied this method to probe the surface band bending of n-type polar GaN and found the different band bending behaviors in the Ga- and N-polar surfaces. This result is related to the surface contaminations and crystal quality near the surfaces of polar GaN.
关键词： hard X-ray photoelectron spectroscopy,surface band bending,depth-resolved electronic structure,polar GaN,X-ray total reflection
更新于2025-09-04 15:30:14
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Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy
摘要： The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution pro?le of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctyl?uorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.
关键词： polymer-cathode interface,band bending,organic light-emitting diode,electronic structure,hard X-ray photoelectron spectroscopy
更新于2025-09-04 15:30:14
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Occupied and unoccupied electronic structures of an L-cysteine film studied by core-absorption and resonant photoelectron spectroscopies
摘要： Unoccupied and occupied electronic structures of an L-cysteine film have been studied by absorption and resonant photoelectron spectroscopies. Core absorptions at S-L, C-K, N-K, and O-K levels indicate that the lower unoccupied states are predominantly composed of oxygen-2p, carbon-2p, and sulfur-4s+3d orbitals, while higher unoccupied states may be attributed dominantly to nitrogen-np (n ≥ 3), oxygen-np (n ≥ 3), and sulfur-ns+md (n ≥ 4, m ≥ 3) orbitals. Resonant photoelectron spectra at S-L23 and O-K levels indicate that the highest occupied state is originated from sulfur-3sp orbitals, while oxygen-2sp orbitals contribute to the deeper valence states. The delocalization lifetimes of the oxygen-1s and sulfur-2p excited states are estimated from a core-hole clock method to be about 9 ± 1 and 125 ± 25 fs, respectively.
关键词： resonant photoelectron spectroscopy,core-absorption,electronic structures,delocalization lifetime,L-cysteine
更新于2025-09-04 15:30:14
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XPS investigation of F-doped MnO <sub/>2</sub> nanosystems fabricated by plasma assisted-CVD
摘要： Supported Mn(IV) oxide nanomaterials were prepared by plasma assisted-chemical vapor deposition from Ar/O2 plasmas starting from a fluorinated Mn(II) β-diketonate diamine adduct. Under the adopted conditions, the target compound served as a single-source molecular precursor for the obtainment of MnO2 nanosystems uniformly doped with fluorine. The overall F content in the target materials, composed of phase-pure β-MnO2, could be tailored as a function of the deposition temperature from 100 to 400 °C, a result of particular importance in view of photocatalytic and gas sensing applications. In the present study, attention is specifically devoted to the investigation of a representative specimen by means of x-ray photoelectron spectroscopy. Besides the wide scan spectrum, a detailed analysis of C 1s, O 1s, Mn 2p, Mn 3s, and F 1s photoelectron peaks is presented and discussed. The analyses reveal the formation of MnO2 free from other manganese oxides, with fluorine present in different chemical states, i.e., lattice F plus traces of precursor residuals at the system surface.
关键词： fluorine doping,x-ray photoelectron spectroscopy,PA-CVD,manganese oxide
更新于2025-09-04 15:30:14
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Atomic layer etching of chrome using ion beams
摘要： In this study, two Cr atomic layer etching (ALE) methods have been applied for the precise control of Cr etching. The first one involves O radical adsorption followed by Cl+ ion desorption (ALE with chemical ion desorption; chemical anisotropic ALE), and the second one involves Cl/O radical adsorption followed by Ar+ ion desorption (ALE with physical ion desorption; physical anisotropic ALE). Their effects on Cr etch characteristics were also investigated. For both the ALE methods, saturated Cr etch depth/cycle of 1.1 and 1.5 ? /cycle were obtained for the chemical and physical anisotropic ALE, respectively, while maintaining near-infinite etch selectivities with various Si-based materials like silicon, silicon dioxide, and silicon nitride. The ALE technique can be used to precisely control the thickness of materials, including metals such as Cr, without any surface damage.
关键词： etch selectivity,adsorption,atomic layer etching,x-ray photoelectron spectroscopy,ion beam,chrome
更新于2025-09-04 15:30:14
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Photoelectron Spectroscopy and Theoretical Study of Cr <sub/><i>n</i> </sub> Si <sub/> 15– <i>n</i> </sub><sup>–</sup> ( <i>n</i> = 1–3): Effects of Doping Cr Atoms on the Structural and Magnetic Properties
摘要： CrnSi15?n? (n = 1?3) clusters were investigated by using size-selected anion photoelectron spectroscopy combined with density functional theory calculations. The results show that the most stable structure of CrSi14? is of C2v symmetry with the Cr atom encapsulated in a Si14 cage which can be viewed as a boat-shaped Si10 unit capped by four additional silicon atoms. A large HOMO?LUMO gap of neutral CrSi14 is confirmed based on the photoelectron spectrum of CrSi14?. Cr2Si13? has two isomers nearly degenerate in energy: one can be characterized as one Si atom interacting with a Cr2Si12 hexagonal prism while the other can be viewed as one Si atom capping a distorted Cr2Si12 hexagonal antiprism. Cr3Si12? has a D6d symmetric wheel structure in which three Cr atoms form an axle surrounded by 12 Si atoms. The magnetic moments of CrSi14?, Cr2Si13?, and Cr3Si12? increase from 1 to 3 μB and then to 7 μB with the increasing number of Cr atoms in the clusters. The magnetic moments of Cr2Si13? and Cr3Si12? are mainly contributed by the surface Cr atoms.
关键词： Photoelectron spectroscopy,Silicon clusters,Chromium doping,Density functional theory,Magnetic properties
更新于2025-09-04 15:30:14
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Effect of Deposition Method on Valence Band Offsets of SiO <sub/>2</sub> and Al <sub/>2</sub> O <sub/>3</sub> on (Al <sub/>0.14</sub> Ga <sub/>0.86</sub> ) <sub/>2</sub> O <sub/>3</sub>
摘要： There are often variations in reported valence band offsets for dielectrics on semiconductors and some of the reasons documented include metal or carbon contamination, interfacial disorder, variations in dielectric composition, thermal conditions, strain, and surface termination effects. In this paper we show that there are differences of up to 1 eV in band alignments for the common gate dielectrics SiO2 and Al2O3 on single crystal (Al0.14Ga0.86)2O3, depending on whether they are deposited by sputtering or Atomic Layer Deposition. In the case of Al2O3, this changed the band alignment from nested (type I) to staggered gap (type II). The valence band offset at each heterointerface was measured using X-Ray Photoelectron Spectroscopy and was determined to be ?0.85 ± 0.15 eV for sputtered Al2O3 and 0.23 ± 0.04 eV for ALD Al2O3 on β-(Al0.14Ga0.86)2O3, while for SiO2 it was 0.6 ± 0.10 eV for sputtered and 1.6 ± 0.25 eV for ALD. These results are consistent with recent results showing that the surface of Ga2O3 and related alloys are susceptible to severe changes during exposure to energetic ion environments.
关键词： Al2O3,(Al0.14Ga0.86)2O3,SiO2,valence band offsets,Atomic Layer Deposition,X-Ray Photoelectron Spectroscopy,sputtering
更新于2025-09-04 15:30:14