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Charge Transport Behavior and Ultrasensitive Photoresponse Performance of Exfoliated F <sub/>16</sub> CuPc Nanoflakes
摘要： Air-stable, photosensitive copper hexadecafluorophthalocyanine (F16CuPc) is a promising n-type semiconductor for organic electronics and optoelectronics. However, the performance of F16CuPc-based devices is significantly limited by the poor crystallinity of thin films. Here, the charge transport and electrical contact behavior of F16CuPc nanoflakes, mechanically exfoliated from needle-like bulk single crystals, are probed by analyzing the temperature-dependent carrier mobility and conductance, where the multiple-trap/release- and band-like transport mechanism govern the charge transport at different temperature ranges and carrier densities. F16CuPc nanoflake-based field effect transistors (FETs) exhibit high on-state current and ON/OFF ratio, one-order magnitude higher than those of reported F16CuPc nanowires, thin films, and nanoribbons. Besides, F16CuPc nanoflake-based phototransistors exhibit attractive photoresponse performance in the spectral range of 300–750 nm even at quite low operating source–drain voltage (1 V), with maximum photoresponsivity of 19 A W?1, detectivity of 8 × 1012 Jones, and fast response speed of 36 ms, which is attributed to the single-crystalline characteristic of nanoflakes, and the resultant efficiently exciton diffusion and charge transport. The work demonstrates that 2D organic nanoflakes with single-crystalline feature will be promising candidates for flexible electronic and optoelectronic devices.
关键词： organic phototransistors,broadband photoresponse,charge transport,F16CuPc nanoflakes
更新于2025-09-11 14:15:04
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Layer-Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition
摘要： Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D-layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few-layer SnS-based field-effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec?1, and a field effect mobility (μFE) of 1.48 cm2 V?1 s?1 in a 14-monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near-infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W?1 and rapid response constants of 60 ms for grow-time constant τg and 10 ms for decay-time constant τd under extremely weak 365 nm illumination. This study sheds light on layer-dependent optoelectronic properties of 2D SnS that promise to be important in next-generation 2D optoelectronic devices.
关键词： phototransistors,field effect transistors,2D materials,tin monosulfide,p-type FETs
更新于2025-09-11 14:15:04
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Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors
摘要： We present a comprehensive analysis of practical p-n-p Ge/Ge1?xSnx/Ge heterojunction phototransistors (HPTs) for design optimization for efficient infrared detection. Our design includes a Ge1?xSnx narrow-bandgap semiconductor as the active layer in the base layer, enabling extension of the photodetection range from near-infrared to mid-infrared to perform wide-range infrared detection. We calculate the current gain, signal-to-noise ratio (SNR), and optical responsivity and investigate their dependences on the structural parameters to optimize the proposed Ge1?xSnx p-n-p HPTs. The results show that the SNR is strongly dependent on the operation frequency and that the introduction of Sn into the base layer can improve the SNR in the high-frequency region. In addition, the current gain strongly depends on the Sn content in the Ge1?xSnx base layer, and a Sn content of 6%–9% maximizes the optical responsivity achievable in the infrared range. These results provide useful guidelines for designing and optimizing practical p-n-p Ge1?xSnx HPTs for high-performance infrared photodetection.
关键词： current gain,sign-to-noise ratio,infrared,heterojunction phototransistors,GeSn alloys
更新于2025-09-09 09:28:46