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Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells
摘要： The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+–n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p–n junctions. In this case, the Voc–Jsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.
关键词： current–voltage characteristics,counteracting electromotive force,tunnel diode,photovoltaic characteristics,multiple-junction solar cells,concentrated solar light
更新于2025-09-16 10:30:52
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Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations
摘要： An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light current–voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current were analyzed. It was shown that the anomaly is observed due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells. This diode absorbs photons that pass across the GaInP layers and creates a counter photovoltage.
关键词： tunnel diode,multijunction solar cell,photovoltaic characteristics,concentrated solar light,counter electromotive force,current–voltage characteristics
更新于2025-09-16 10:30:52
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Planar perovskite solar cells using triazatruxene-based hyperbranched conjugated polymers and small molecule as hole-transporting materials
摘要： Conjugated polymers have been widely used as hole-transporting materials (HTMs) in planar perovskite solar cells (p-PSCs) and play a vital role in hole transport. In this work, based on triazatruxene (TAT), two hyperbranched conjugated polymers (named as TATF8HBP and TATSFHBP) and a star-shaped carbazole-functionalized small molecule (named as TATCz3) are employed as HTMs in p-PSCs with a well solubility. The differences of these materials between carrier mobility, hole extraction and transmission are investigated due to their discrepancy in molecular structure, leading to their photovoltaic performances sequence as follows: TATF8HBP (11.11%) > TATSFHBP (9.48%) > TATCz3 (0.87%). In addition, the short-circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) of p-PSCs show the same trend as PCE does. The results reveal that TATF8HBP exhibits the best performance as a hole-transporting layer (HTL) since the polymer chain and its fluorene unit contribute to the hole transport.
关键词： perovskite solar cells,hyperbranched polymer,triazatruxene derivative,photovoltaic characteristics,hole-transporting materials
更新于2025-09-16 10:30:52
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The role of NaF post-deposition treatment on the photovoltaic characteristics of semitransparent ultrathin Cu(In,Ga)Se <sub/>2</sub> solar cells prepared on indium-tin-oxide back contacts: a comparative study
摘要： Cu(In,Ga)Se2 (CIGSe) solar cells with absorber thicknesses of <500 nm are important for lowering the cost of photovoltaic (PV)-generated electricity. Moreover, ultrathin bifacial CIGSe solar cells can be prepared on indium-tin-oxide (ITO) back contacts (BCs). In contrast to Mo BCs, ITO BCs suppress the di?usion of Na from soda-lime glass (SLG) to the CIGSe absorber. Na present in the absorber is supposed to ameliorate the PV properties of CIGSe solar cells, but in the absence of Na or when the Na concentration is extremely low, the PV performance is expected to be poor. In this study, a NaF post-deposition treatment (PDT) was applied to a <500 nm thick semitrasparent CIGS absorber prepared by a 1-stage co-evaporation process. A detailed comparison is made between the CIGSe solar cell that underwent the NaF PDT (C–Na) and a reference CIGSe solar cell in which no Na was supplied from an external source (C0). All the PV parameters (i.e., the open-circuit voltage, short-circuit current density, ?ll factor, and e?ciency) of C–Na considerably improved compared with those of C0. To understand the factors that led to this improvement, the solar cells are analyzed by various characterization techniques, including JV measurements, external quantum e?ciency measurements, temperature-dependent measurements of the open-circuit voltage, capacitance–voltage measurements, drive level capacitance pro?lometry, and admittance spectroscopy. Furthermore, the reaction occurring at the CIGSe/ITO interface is investigated with transmission electron microscopy, and the implications of this reaction on the device performance are discussed.
关键词： ultrathin,solar cells,semitransparent,indium-tin-oxide back contacts,NaF post-deposition treatment,Cu(In,Ga)Se2,photovoltaic characteristics
更新于2025-09-11 14:15:04