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Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
摘要： Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the e?ciency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best e?ciency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion e?ciency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx ?lm, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the bene?cial e?ects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a signi?cant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two di?erent points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
关键词： hole transport material,inverted planar perovskite solar cell,perovskite morphology,Co-doped NiOx,electrical conductivity
更新于2025-09-23 15:21:01
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Room-temperature processed ZrO2 interlayer towards efficient planar perovskite solar cells
摘要： The Sn-doped In2O3 transparent conductive (ITO) electrode in planar perovskite solar cells (PSCs) is modified by zirconia (ZrO2) interlayer with low-temperature process. Here the ZrO2 film is prepared by ultraviolet (UV) treatment at room temperature. The effects of the inserted ZrO2 interlayer on the performance of CH3NH3PbI3-xClx-based PSCs have been systemically studied. After optimizing the process, the champion efficiency of PSC with UV-treated ZrO2 interlayer is 19.48%, which is larger than that of the reference PSC (15.56%). The improved performance in the modified devices is primarily ascribed to the reduced trap states and the suppressed carrier recombination at the ITO/SnO2 interface. Our work provides a facile route to boost the photovoltaic performance of PSCs by modifying the surface of transparent conductive electrode at room temperature.
关键词： Photoelectric properties,ITO/SnO2 interface modification,Ultraviolet (UV) treatment,Planar perovskite solar cell,Room-temperature processed ZrO2 interlayer
更新于2025-09-19 17:13:59
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Low Temperaturea??Processed Zr/F Coa??Doped SnO <sub/>2</sub> Electron Transport Layer for Higha??Efficiency Planar Perovskite Solar Cells
摘要： The energy band position and conductivity of electron transport layers (ETLs) are essential factors that restrict the efficiency of planar perovskite solar cells (p-PSCs). Tin oxide (SnO2) has become a primary material in ETLs due to its mild synthesis condition, but its low conduction band position and limited intrinsic carriers are disadvantageous in electron transport. To solve these problems, this work exquisitely designs a Zr/F co-doped SnO2 ETL. The doping of Zr can raise the conduction band of SnO2, which reduces the energy barrier in electron extraction and inhibits the interface recombination between the ETL and perovskite. The open-circuit voltage (VOC) of p-PSCs consequently increases. F? doping belongs to n-type doping. Thus, it equips SnO2 with a large number of free electrons and improves the conductivity of the ETL and short-circuit current (JSC). The device based on Zr/F co-doped ETL achieves a high efficiency of 19.19% and exhibits a reduced hysteresis effect, which is more satisfactory than that of a pristine device (17.35%). Overall, our research successfully adjusts the energy band match and boosts the conductivity of ETL via Zr/F co-doping. The results provide an effective strategy for fabricating high-efficiency p-PSCs.
关键词： electron transport layer,Zr/F co-doping,energy level match,planar perovskite solar cell,tin oxide (SnO2)
更新于2025-09-19 17:13:59
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Improvement of planar perovskite solar cells by using solution processed SnO2/CdS as electron transport layer
摘要： The efficiency of planar perovskite solar cells (PSCs) with SnO2 as electron transport layer is already more than 19% achieved under controlled atmosphere. PSCs with solution processed SnO2 show high hysteresis and low fill factor. One way to improve the planar PSCs is using buffer layer between electron transport layer and perovskite to enhance the photo-electron extraction process. In this study, SnO2 and SnO2/CdS layers were fabricated by solution process using a suspension including CdS nanoparticles synthesized via a simple solution route. Then planar PSCs with the structure of Glass/FTO/ETL/Perovskite/Sprio-OMeTAD/Au were fabricated in ambient air condition using SnO2 and SnO2/CdS as ETL. It is shown that a thin interface layer of CdS nanoparticles on top of SnO2 layer consistently improves the electron transporting properties of SnO2 layer. Mott-Schottky analysis shows a gradual change of electron affinity takes place by deposition of CdS nano particles. CdS interface layer can act as an intermediate step to facilitate electron transfer from perovskite layer to SnO2. The hysteresis index reduces from 0.17 to 0.05 and the efficiency improves from 15.0% to 17.18%. Impedance spectroscopy indicates that interface resistance is reduced by incorporating CdS nanoparticles.
关键词： CdS nanoparticle,Electron extraction,SnO2,Planar perovskite solar cell,Electron transport layer
更新于2025-09-12 10:27:22
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Efficiency improvement of planar inverted perovskite solar cells by introducing F8BT into PTAA as mixed hole transport layer
摘要： Hole-transport layer (HTL) is a crucial component to influence the crystallization of the perovskite layer which has close photovoltaic efficiency and stability of perovskite relationship with the photovoltaic efficiency and stability of perovskite solar cells (PVSCs). In this work, planar inverted PVSCs employing polytriarylamine (PTAA) HTL mixed with a polymeric material of poly(9,9-dioctyfluorene-co-benzothiazole) (F8BT) are fabricated, and the effect of mixed polymer HTL on the device performance was investigated. After the variation of the F8BT ratio in the mixed HTL, the average power conversion efficiency (PCE) of 14.88 % with negligible hysteresis was achieved and the champion device exhibits a PCE of 15.41 % due to the increased charge carrier extraction and optimized crystallization properties of perovskite. Unsealed planar p-i-n PVSCs with mixed polymer HTL show a 28.8 % incensement in average PCE (14.88 % vs 11.55 %) and over 30 % enhancement in stability at ambient condition for two weeks with respect to control due to the improvement in the crystallinity of perovskite layer and conductivity of polymer layer. This work provides an effective strategy for the development of highly efficient planar PVSC fabricated on mixed polymer HTL.
关键词： Planar perovskite solar cell,F8BT,PTAA,Mixed polymer HTL,Efficiency improvement
更新于2025-09-12 10:27:22