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[IEEE 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Waikoloa Village, HI, USA (2018.6.10-2018.6.15)] 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Plasma Texturing of Silicon Wafers and Finished Solar Cell for Mass Production
摘要： Standard plasma texturing of silicon wafers are not widely introduced within mass production due to several challenges which have to be overcome before implementation i.e. surface contamination, surface near damaging due to ion bombardment, and surface passivation. Within this contribution we will show our current status to overcome these challenges. We will present that the electrical and optical properties of ICP only plasma textured samples are sufficient for solar cell production. Since in ICP processes the ion bombardment is low we also will discuss our current understanding of the plasma process based on experimental results of the self-masking process. Furthermore, a new plasma texturing approach texturing the SiN layer of finished solar cells is introduced for the first time which overcome all problems introduced by the plasma texturing of bare solar wafers.
关键词： Plasma materials processing,silicon,SiN texturing,Plasma texturing,photovoltaic cells
更新于2025-10-22 19:40:53
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Model for black silicon formation just from surface temperature non-uniformities
摘要： The scienti?c issue of this paper is the formation of the initial surface roughening during black silicon (b-Si) preparation by maskless SF6/O2 plasma texturing. In detail, the authors investigate a novel approach whether merely substrate temperature dependent surface mechanisms and plasma particle diffusion are suf?cient to theoretically obtain anisotropic etching. For that, a quasi-2D model is developed including the relevant mechanisms such as (i) etching, (ii) the deposition of the masking layer SiOxFy, (iii) plasma particle transport, and (iv) heat diffusion. Further on, a linear stability analysis is applied, ?rstly, to reveal theoretical conditions for anisotropic etching and, secondly, to qualitatively evaluate the impact of the model parameters on the texturing range. The evaluation shows that plasma particle diffusion along the surface is the main factor for nano-roughening. Additionally, the experimentally expected strong dependency of the texturing on the substrate temperature is con?rmed and other extracted dependencies can be correlated to experimental observations. With that, a novel model is introduced explaining the initial b-Si roughening without taking into account surface removal by directed ions.
关键词： surface roughening,anisotropic etching,black silicon,plasma texturing,temperature non-uniformities
更新于2025-09-04 15:30:14