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823 mA/mm drain current density and 945 MW/cm2 Baliga’s figure of merit enhancement-mode GaN MISFETs with a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric
摘要： In this letter, we demonstrate a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric employed in enhancement-mode GaN MISFETs, where the gate recess is fabricated based on our proposed self-terminating gate recess etching technique using GaN cap layer as recess mask. By using LPCVD-Si3N4 and PEALD-AlN dual gate dielectric layer, the devices exhibit a high quality gate dielectric and a good GaN channel interface, yielding a high gate swing up to 18V and a high channel effective mobility of 137 cm2/V?s at such high gate bias. Thus, the fabricated devices feature a high maximum drain current density of 823 mA/mm, a threshold voltage of 2.6 V, an on-resistance of 7.4 Ω?mm, and an ON/OFF current ratio of 108 with gate-drain distance of 2 μm. Meanwhile, a high OFF-state breakdown voltage of 1290 V is achieved with 10 μm gate-drain distance. The corresponding specific on-resistance is as low as 1.76 mΩ?cm2, leading to a high Baliga’s ?gure of merit of 945 MW/cm2.
关键词： self-terminating etching,enhancement-mode GaN MISFETs,plasma-enhanced atomic layer deposition (PEALD) AlN,LPCVD Si3N4
更新于2025-09-23 15:21:21
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Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
摘要： Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.
关键词： plasma-enhanced atomic layer deposition (PEALD),stoichiometry,SiOx,SiO2,superlattice
更新于2025-09-19 17:15:36
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Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
摘要： In this work, we reported excellent plasma-enhanced atomic layer deposition (PEALD)-based Al2O3/organic-inorganic (O-I) nanohybrid gas barrier film which exhibits ultralow water vapor transmission rate (WVTR), high activation energy for permeation, high optical transmission in visible light and sufficient flexibility. The values of WVTR and activation energy for permeation of our PEALD-based Al2O3/O-I nanohybrid 4 pair gas barrier film are obtained to be 7.83 × 10?5 g/m2/day (60 °C, 90% RH) and 103.10 kJ/mol via the electrical calcium test. Optical transmission in visible light is 96.14% and critical bending radius 7 mm–9 mm. Introduction of O-I nanohybrid layers between PEALD-based Al2O3 layers improved the properties of gas barrier films on anticorrosion, adhesion, and flexibility.
关键词： Anticorrosion,Encapsulation,Plasma enhanced atomic layer deposition (PEALD),Sol-gel,Nanoparticles,Organic-inorganic nanohybrid,Al2O3
更新于2025-09-19 17:15:36