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oe1(光电查) - 科学论文

3 条数据
?? 中文(中国)
  • The Influence of the EVA Film Aging on the Degradation Behavior of PV Modules Under High Voltage Bias in Wet Conditions Followed by Electroluminescence

    摘要: The influence of the ethylene-vinyl acetate (EVA) film quality on potential induced degradation was studied on in-house developed mini modules with p-type monocrystalline silicon solar cells. The modules were assembled with EVA films of equivalent qualities, but different ages and exposed to an accelerated test (relative humidity = 85%, T = 60 °C, Vbias = +1000 V). The age of the EVA film was determined from the time we received the EVA film, and opened the sealed enclosure and the time of lamination. After the EVA film was removed from the sealed enclosure, it was kept in a dark place at room temperature. The storage times of the “fresh,” “aged,” and “expired” films were: less than 14 d, around 5 mo, and more than 5 years, respectively. While modules with a “fresh” EVA film exhibit almost no degradation, the modules with the “aged” EVA film degrade very rapidly and severely. Their degradation rate was around 0.2%/d during the 2000 h of damp heat test. We also observed a strong silver line corrosion, which occurs because of the peroxide leftovers in the “aged” EVA films.

    关键词: photovoltaic (PV) modules,high voltage stress,EVA film,Degradation,potential induced degradation (PID),leakage current

    更新于2025-09-23 15:21:01

  • Elucidating the mechanism of potential induced degradation delay effect by ultraviolet light irradiation for p-type crystalline silicon solar cells

    摘要: A mechanism of potential induced degradation (PID) delay effect by ultraviolet (UV) light irradiation during PID test for p-type crystalline silicon (c-Si) solar cells was proposed in this work. The degradation rate of the solar cell performances is slowed down by the UV light irradiation in the 300–390 nm wavelength range during PID test. The conductivity increase of the silicon nitride (SiNx) anti-reflection coating (ARC) layer on the solar cell surface under UV light irradiation during PID tests, which relates to the mechanism preventing the penetration of sodium ions into the active cell layer, induces the PID delay effect for the p-type c-Si solar cells. The PID delay effect was also analyzed by a microwave photo-conductance decay (μ-PCD) technique in this work. The reduction behavior of the components in the μ-PCD signal curves including rapid (τ1) and slow (τ2) decay time constants and the effective lifetime (τeff) presents a good correlation with the performance degradation behavior of the solar cells over PID test duration. Moreover, the reduction rate of these components is also slowed down under the UV light irradiation in the 300–390 nm wavelength range during PID tests. Notably, their reduction behavior was compatible with the mechanism of the conductivity increase of the SiNx ARC layer under UV light irradiation.

    关键词: Potential induced degradation (PID),Silicon solar cells,UV irradiation,Silicon nitride (SiNx),Microwave photo-conductance decay

    更新于2025-09-23 15:19:57

  • Analysis of Field Degradation Rates Observed in All-India Survey of Photovoltaic Module Reliability 2018

    摘要: The analysis of performance degradation in photovoltaic (PV) modules with c-Si technologies as observed in the All-India Survey of PV Module Reliability 2018 is presented in this article. The degradation rates are correlated with the module age, system size, mounting configuration, and climate of deployment. Key failure modes responsible for the higher degradation rates seen in certain sites are identified using visual, infrared, and electroluminescence imaging. Potential-induced degradation is found to be the key mechanism responsible for higher degradation rates seen in Young sites. Also, deployment in hot climates and rooftops is seen to accelerate degradation. Multipoint analysis of degradation rates is presented at sites inspected in prior All-India Surveys.

    关键词: potential-induced degradation (PID),All-India Survey,solar photovoltaic (PV),light-induced degradation (LID),field survey,silicon,reliability,degradation

    更新于2025-09-12 10:27:22