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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - A New Measurement Method for Supraharmonics in 2–150 kHz
摘要： The 32 equal-width segments supraharmonics measurement method, recommended in the newly revised standard IEC 61000-4-30, has some disadvantages, such as the large frequency resolution, and the large effect of spectral leakage. To overcome this, a new measurement method for supraharmonics in 2-150 kHz based on compressive sensing is proposed. Simulation results and measured data analysis indicate that the proposed approach can overcome DFT algorithm’s limitation, and the frequency resolution can be improved by an order-of-magnitude without extending the signal’s observation time. The amplitude of supraharmonics can also be calculated accurately.
关键词： Compressive sensing,orthogonal matching pursuit,measurement,power electronics,supraharmonics
更新于2025-09-10 09:29:36
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[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Design of a High-Frequency Dual-Active Bridge Converter with GaN Devices for an Output Power of 3.7 kW
摘要： In the automotive industry weight and volume are important issues to design power electronics besides costs. With the upcoming of wide band-gap devices like Gallium Nitride (GaN) devices high switching frequencies become a potential for converters. Operating at high switching frequencies reduces the volume of passive components e.g., transformer significantly. Auxiliary supplies or on-board charging systems for electric vehicles are typical areas of application for a reduction of volume and weight. For this kind of application dc-dc converters like a Dual Active Bridge converter can be used. This paper describes a detailed electrical analysis of a compact single phase Dual Active Bridge converter operated at a high switching frequency of 500 kHz at a dc voltage of 400 V on both full bridges to achieve a power transfer of 3.7 kW. In this paper it is shown how a fast switching and compact dual active bridge converter is designed that operates with a high efficiency of about 96% at nominal power.
关键词： Gallium Nitride (GaN) devices,Dual Active Bridge converter,electric vehicles,power electronics,high switching frequencies
更新于2025-09-09 09:28:46
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Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module
摘要： Modern power electronics has increased demands in current density and high temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received much attention in attaching power dies due to its superior high temperature reliability. This paper investigated the sintering properties of nanosilver film in double side sintered power packages. X-ray diffraction (XRD) results revealed that the size of nanosilver particles increased after pressure-free sintering. Comparing with the pressure-free sintered nanosilver particles, the 5 MPa sintered particles showed a higher density. When increasing sintering pressure from 5 to 30 MPa, the shear strength of the sintered package increased from 8.71 MPa to 86.26 MPa. When sintering at pressures below 20 MPa, the fracture areas are mainly located between the sintered Ag layer and the surface metallization layer on the fast recovery diode (FRD) die. The fracture occurs through the FRD die and the metallization layer on bottom Mo substrate when sintering at 30 MPa.
关键词： fracture,power electronics,nanosilver sintering,shear strength
更新于2025-09-09 09:28:46
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Gallium Oxide || Low-field and high-field transport in β-Ga2O3
摘要： β-Ga2O3 has recently emerged as a novel wide-bandgap semiconductor with immense potential for applications in power electronics and optoelectronics. Experimental advancements in the past 5 years have been significant toward realizing commercial β-Ga2O3 devices in the near future [1–7]. Matured crystal growth and processing techniques make the material further promising [8–10]. In terms of power electronic applications, MOSFETs based on this material have been demonstrated that could withstand record high voltages [11, 12]. The accuracy of n-type doping and the difficulty of p-type doping make electrons the primary charge carriers in β-Ga2O3. Although β-Ga2O3 has lower electron mobility compared to other wide-bandgap semiconductors, it is found to have a superior Baliga’s figure of merit that jointly accounts for on-state resistance and breakdown voltage [4]. So it is important to investigate in rigor the fundamentals behind β-Ga2O3 material properties that could be beneficial to gain an understanding on the causes that control mobility and breakdown voltage. There are theoretical reports on fundamental materials aspects including electronic structure [13] and optical properties [14], lattice dynamical and dielectric properties [15], and thermal properties [16, 17] as well. The primary physics behind both mobility (and hence the device on resistance) and breakdown voltage lies in the electron transport phenomenon. There have been a few experimental reports that try to characterize the electron transport and scattering mechanisms in β-Ga2O3 with Hall measurements being reported a few times to predict temperature dependence and also crystal orientation dependence of the electron mobility [18, 19]. On the other hand, we are making a systemic study on the theoretical understanding of electron transport in β-Ga2O3 starting from the first principles [20–22]. The main idea is to follow a bottom-up approach in order to develop an understanding of the near-equilibrium and far-from-equilibrium electron dynamics in β-Ga2O3. This is unique compared to conventional semiconductors in a way that β-Ga2O3 has a low-symmetry crystal structure and a fairly large primitive unit cell that gives rise to many phonon modes. On several occasions, the traditional notions of electron transport that are applicable to Si and GaAs actually do not quite hold well in the case of β-Ga2O3. In this chapter, we attempt to provide a comprehensive picture of electron transport in β-Ga2O3 under low and moderately high electric fields based on our work in the recent years.
关键词： electron-phonon interaction,β-Ga2O3,electron mobility,power electronics,optoelectronics,electron transport,velocity-field curves,wide-bandgap semiconductor
更新于2025-09-09 09:28:46
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Gallium Oxide || Band alignments of dielectrics on (? 201) β-Ga2O3
摘要： β-Ga2O3 is an attractive wide direct bandgap semiconductor ((cid:1)4.9 eV) for power electronics, truly solar blind UV detection, and extreme environment applications [1–16]. The β monoclinic conformation of Ga2O3 is the most prominent of the five phases; it is already available commercially in up to 4-in diameter wafers with prices expected to drop significantly over the next few years as processes are further refined and more crystal growth companies enter the market. α and ε conformations have proven to be more difficult in determining growth parameters. Hydride vapor-phase epitaxy (HVPE) has shown some promise for growth of both of these phases but much development is still needed. As such, all the discussion in this chapter is on the β-phase.
关键词： extreme environment applications,β-Ga2O3,UV detection,power electronics,HVPE,monoclinic conformation,bandgap
更新于2025-09-09 09:28:46
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Gallium Oxide || Ga2O3 nanobelt devices
摘要： β-Gallium oxide (β-Ga2O3) is attractive as a novel material for (opto)electronics, especially high-power electronics and solar-blind photodetectors (PDs). It has an ultrawide direct bandgap of around 4.8–4.9 eV at room temperature and high thermal and chemical stabilities [1, 2]. The theoretical electrical breakdown field (Ebr) of β-Ga2O3 is known to be (cid:1)8 MV/cm, and 3.8 MV/cm of Ebr has been experimentally demonstrated in a recent report, recording a higher value than those of GaN and SiC. Baliga’s figure of merit (BFOM) of β-Ga2O3 is also superior among some of the other popular wide-bandgap semiconductors, such as 4H-SiC and GaN [3–6]. These outstanding properties have led to a large number of reports on various electrical devices based on β-Ga2O3 including metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs), and Schottky barrier diodes [7–10]. Furthermore, the wide bandgap of β-Ga2O3 provides intrinsic solar blindness that allows fabrication of solar-blind PDs without the need for additional optical filters that block light in the range of long wavelength [11]. Single-crystal β-Ga2O3 is commercially available as a various of growth methods exist; especially the edge-defined film-fed growth (EFG) method that can be used to grow bulk β-Ga2O3 substrates with high crystal quality [12, 13]. However, the low thermal conductivity of β-Ga2O3 has to be considered when fabricating high-power electrical devices.
关键词： high-power electronics,β-Ga2O3,wide-bandgap semiconductors,optoelectronics,solar-blind photodetectors
更新于2025-09-09 09:28:46
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[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - 710 V Breakdown Voltage in Field Plated Ga203 MOSFET
摘要： ?-Gallium oxide (Ga2O3) is an increasingly attractive choice for next generation power electronics applications due to its high Baliga’s figure of merit (BFoM) and mature bulk substrate growth technologies. Recent experiments have shown its great potential as the next generation power semiconductor. There have been reports on MOSFETs with breakdown of 750 V[1], large on current densities exceeding 1.5 A/mm [2], and enhancement mode operation by interface state modulation [3]. In order to increase the breakdown voltage of ??Ga2O3 MOSFETs, the electric field needs to be reduced in the gate oxide and air near the gate-drain region; breakdown could occur in these regions before the intrinsic Ga2O3 breakdown in the channel. In this report, we design a composite ALD/PECVD field plate to increase the breakdown voltage of Ga2O3 MOSFETs achieving a maximum breakdown voltage of 710 V. The comparison between field plate and non-field plate devices suggest breakdown outside the channel and field plate oxide region, indicating the channel is still far from breakdown condition.
关键词： Ga2O3,MOSFET,breakdown voltage,power electronics,field plate
更新于2025-09-09 09:28:46
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[IEEE 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Paris, France (2018.10.14-2018.10.17)] 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Cooperative Control and Power Management for Islanded Residential Microgrids with Local Phase-wise Generation and Storage Units
摘要： A cooperative control and management strategy for islanded residential microgrids is presented in this paper. In addition to the loads, PV generation and battery storage are considered within each phase using droop control schemes. The proposed strategy uses a two-tiered management scheme to coordinate intra- and inter-phase power management. Each intra-phase control relies on a modi?ed vector control with a multi-segment (P/f) droop strategy to balance the generation, load and potential power transfer among other two phases. The inter-phase management only comes into play when there is an imbalance among phases so that desirable power can be transferred to the phases with de?ciencies. This is accomplished by back-to-back converters connecting the phases. PSCAD/EMTDC has been used to investigate the performance of the proposed strategy. It is interesting to observe that when extra power is needed in one particular phase, the desired amount is transferred through the back-to-back converters from other phases. As a result, the balance for voltage, frequency, and power can be achieved at both the phase level and the system level.
关键词： single-phase systems,Residential microgrids,back-to-back converters,power electronics,power management
更新于2025-09-04 15:30:14
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[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - Failure Mechanism Assessment of TO-247 Packaged SiC Power Devices
摘要： As the efficiency of power electronics becomes more important, the use of silicon carbide (SiC) devices in power electronics has shown several benefits in efficiency, blocking voltage and high temperature operation. In addition, the ability of SiC to operate at higher frequencies due to lower switching losses can result in reduced weight and volume of the system, which also are important factors in vehicles. However, the reliability of packaged SiC devices is not yet fully assessed. Previous work has predicted that the different material properties of SiC compared to Si could have a large influence on the failure mechanisms and reliability. For example, the much higher elastic modulus of SiC compared to Si could increase strain on neighboring materials during power cycling. In this work, the failure mechanisms of packaged Si- and SiC-based power devices have been investigated following power cycling tests. The packaged devices were actively cycled in 4.5 s heating and 20 s cooling at ΔT = 60 - 80 K. A failure analysis using micro-focus X-ray and scanning acoustic microscopy (SAM) was carried out in order to determine the most important failure mechanisms. The results of the analysis indicate that the dominant failure mechanism is wire bond lift-off at the device chip for all of the SiC-based devices. Further analysis is required to determine the exact failure mechanisms of the analyzed Si-based devices. In addition, the SiC-based devices failed before the Si-based devices, which could be a result of the different properties of the SiC material.
关键词： power cycling,SiC,power electronics,failure mechanisms,reliability
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - An original in-situ way to build field grading materials (FGM) with permittivity gradient using electrophoresis
摘要： This paper reports on an original method developed at LAPLACE to structure field grading materials (FGM) by local handling of high permittivity ceramic (SrTiO3) particles in an epoxy resin using electrophoresis (i.e. DC voltage application). This new way of structuring composites allows building FGM with a high permittivity region (region with high particle concentration) while the rest of the composite remains with low particle concentration). The resin curing enables to ‘freeze’ the particles with this spatial arrangement. Process details and dielectric characterization of each region of the FGM composites are reported. Finally, a clear demonstration of the FGM performances, used as a field grading encapsulation material for high voltage power electronics modules, is shown supported both by field repartition simulation and experimental breakdown voltage improvements of encapsulated direct bonded copper (DBC) substrates.
关键词： SrTiO3,Encapsulation,Epoxy,Permittivity,Composites,Power modules,Field grading,FGM,Power electronics,Functionally graded materials,Electrophoresis
更新于2025-09-04 15:30:14