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[IEEE 2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) - Budapest, Hungary (2018.8.26-2018.8.30)] 2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) - Impact of the Different Parasitic Inductances on the Switching Behavior of SiC MOSFETs
摘要： This paper experimentally investigates into the effects of parasitic inductances on the switching performance of a SiC MOSFET halfbridge. As the switching dynamics of wide-bandgap power semiconductors are by magnitudes larger compared to silicon devices, the parasitic elements in the switching cell become increasingly important, as they limit the current and voltage slopes and cause oscillations. A thorough understanding of those effects is necessary for the design of highly efficient and integrated next-generation power electronic converters. An implementation method to realize cheap and well-reproducible variable inductors in the nanohenry range is presented. Furthermore, a test PCB equipped with SiC MOSFETs is built and double pulse experiments are carried out under the variation of all relevant inductances in the switching cell. The results are analyzed with respect to the switching performance and differences between the switching transients of Si and SiC devices are demonstrated and explained with respect to the parasitic elements.
关键词： switching performance,power electronics,parasitic inductances,double pulse experiments,SiC MOSFET
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - High Voltage GaN Switch Reliability FIT rates and PPM reliability based on standards from: Joint Electron Device Engineering Council (JEDEC), Automotive Electronics Council (AEC) and German Electrical and Electronic Manufacturers' Association (ZVEI)
摘要： Adoption of any semiconductor technology by the power conversion market requires the understanding of fundamental failure modes, acceleration factors and reliability statistics. This study shows how GaN products from Transphorm can meet this challenge, especially in the critical High Voltage Off State (HVOS) reliability stress test. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This market requirement can be addressed by testing to failure statistically significant samples of devices, and analyzing the data with appropriate models. The methods developed for measuring GaN reliability on large samples will be discussed, which are wholly based on existing industrial and automotive standards. The resulting data can be used to supplement qualification testing results when the failure modes and acceleration factors are well understood.
关键词： GaN,FIT,PPM,HEMT,acceleration factor,power electronics,reliability
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package
摘要： There is significant interest in the power electronics industry in transitioning from silicon to wide-bandgap devices. Gallium oxide devices have the potential to offer comparable or even superior performance than other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.
关键词： gallium oxide,thermal modeling,thermomechanical modeling,finite-element,high-temperature packaging,power electronics,wide-bandgap devices
更新于2025-09-04 15:30:14