- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Deep p-ring trench termination: An innovative and cost-effective way to reduce silicon area
摘要： A new type of high voltage termination, namely the 'deep p-ring trench' termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliability.
关键词： Termination,High Voltage,Power Semiconductor Devices
更新于2025-09-23 15:23:52
-
[IEEE 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Miramar Beach, FL, USA (2019.8.19-2019.8.21)] 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Small Batch Production and Test of Custom Support Electronics for Infrared LED Scene Projectors
摘要： This letter reports a GaN vertical trench metal–oxide–semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n+-GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemical-vapor-deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate “oxide”. This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.
关键词： GaN,vertical transistor,MOSFET,power semiconductor devices
更新于2025-09-23 15:21:01
-
[IEEE 2019 FISE-IEEE/CIGRE Conference - Living the energy Transition (FISE/CIGRE) - Medellin, Colombia (2019.12.4-2019.12.6)] 2019 FISE-IEEE/CIGRE Conference - Living the energy Transition (FISE/CIGRE) - Abating carbon emissions by means of utility-scale photovoltaics and storage: the Duke Energy Progress/Carolinas case study
摘要： A Sn-doped (100) β-Ga2O3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) β-Ga2O3 substrate. Ga2O3-based metal–oxide–semiconductor field-effect transistors with a 2-μm gate length (L G), 3.4-μm source–drain spacing (LSD), and 0.6-μm gate–drain spacing (LGD) were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the OFF-state. The gate-to-drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical limits. Further performance projections are made based on layout, process, and material optimizations to be considered in future iterations.
关键词： MOVPE,β-Ga2O3,MOSFETs,power semiconductor devices
更新于2025-09-23 15:19:57
-
[IEEE 2019 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) - Pattaya, Chonburi, Thailand (2019.7.10-2019.7.13)] 2019 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) - Antenna Gain Self-calibration for Double Ridged Guide Horn Antenna using Bi-directional Optical Fiber Link Transceiver
摘要： This letter reports a GaN vertical trench metal–oxide–semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n+-GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemical-vapor-deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate “oxide”. This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.
关键词： GaN,vertical transistor,MOSFET,power semiconductor devices
更新于2025-09-19 17:13:59
-
[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Modeling and model parameter extraction of wide bandgap power semiconductor device, package, and circuit for simulating fast switching behavior
摘要： Wide band gap power semiconductor devices have superiority in fast switching operation, when compared to Si IGBT and PiN diodes for voltage range from several hundred to several kilo volts. The fast switching operation gives high di/dt and dv/dt, which results in inducing surge voltage and EMI noise for poorly designed circuit. The precise dynamical model of power device and peripheral component is necessary in estimating these transient phenomenon. This paper presents the dynamical model of wide bandgap power semiconductor devices, package of power device, and circuit wiring. The fixture configurations to extract model parameter is also presented. The static blocking and conducting condition for power device is characterized with curve tracer. The terminal capacitance of power device dominates switching dynamic terminal characteristics. Then, voltage dependency of capacitances are characterized with the developed fixture, which can cope with normally on transistor characterization. The electro magnetic analysis of package and circuit to identify parasitic component is also addressed in the paper. The switching behaviors of power device and the phenomenon in the circuit are discussed based on the model and extracted model parameters.
关键词： parameter extraction,wide bandgap power semiconductor devices,modeling,fast switching behavior,simulation
更新于2025-09-10 09:29:36