Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors

摘要： Nanoporous GaN distributed Bragg re?ectors (DBRs) with a high re?ectivity (* 92%), which was fabricated via a doping selective electrochemical etching process, were used to deposit Eu-doped b-Ga2O3 ?lms by using pulsed layer deposition. Structural and chemical composition analyses indicated that the 900 (cid:3)C-annealed ?lm in air has the best crystalline quality and highest photo-luminescence (PL) ef?ciency. The epitaxial relationship between the b-Ga2O3: Eu ?lm and DBR mirror was Ga2O3 (201)kGaN (0001) with Ga2O3 [010]kGaN [1210]. Compared to the Eu:Ga2O3 ?lm on reference template, the 900 (cid:3)C-an-nealed ?lm on the DBR mirror presented a * 20-fold enhancement in the PL emission. The performance enhancement was attributed to light-coupling enhancement of the buried DBR mirror. Because of the good electrical properties of the annealed ?lms, the fabricated DBR substrates pave the way for devel-oping a range of rare-earth-doped Ga2O3 optoelectronic devices.