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Silanized quantum dots as labels in lateral flow test strips for C-reactive protein
摘要： The paper describes the first use of silanized semiconductor core-shell quantum dots as fluorescent labels for macromolecule, C-reactive protein determination in blood plasma. The controlled synthesis of CdSe cores, with successive shells of CdS, CdZnS, ZnS and coating with transparent, stable, and inert silica shell, provides quantum dots with a narrow emission band, high quantum yield, and prolonged signal stability. Finally, the quantum dots were conjugated with specific antibodies via carboxylic groups on the silica surface. The method was further used for the immunochromatographic assay of C-reactive protein, a diagnostically important inflammatory biomarker. Assays with both the fluorescent QDs and a widely used colloidal gold label were developed in parallel and compared. The silanized quantum dots provide a more sensitive assay with a detection limit of 1 ng/mL for C-reactive protein in standard solutions, whereas the common assay has a detection limit of 10 ng/mL. The possibility of quantitative evaluation of analyte content by a portable device was demonstrated; the accuracy of the measurements was in the range of 5%–10%. The tests were used to determine C-reactive proteins in human plasma samples. The selected optimized protocol for these samples is based on a 4-fold dilution. The final working range of the assay, 4–1,200 ng/mL, covers practically all important interval of C-reactive protein values for the characterization of acute, chronic, and local inflammatory processes. Due to their high physical stability and inertness as well as intense, stable, and reproducible fluorescence, silanized quantum dots may be applied for high-sensitive assays for different analytes.
关键词： C-reactive protein,Quantum dots,silanization,lateral flow immunoassay
更新于2025-11-19 16:46:39
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Reversible/Irreversible Photobleaching of Fluorescent Surface Defects of SiC Quantum Dots: Mechanism and Sensing of Solar UV Irradiation
摘要： Knowledge about photobleaching properties of the fluorescent surface defects of the semiconductor quantum dots (QDs) is crucial for their applications. Here, the photobleaching properties of the fluorescent surface defects of the colloidal 3C-SiC QDs are reported. The combined experimental and theoretical study reveals that the observed violet fluorescence at around 392 nm stems from the carboxylic acid group-related surface defects. When the SiC QDs are exposed to the UV irradiation, the 392 nm fluorescent surface defects show both reversible and irreversible photobleaching, whereas the 438 nm fluorescent surface defects show only irreversible photobleaching. The photochemical mechanisms dominating these phenomena are explored. The photobleaching property of the SiC QDs is utilized to detect the solar UV irradiation with high accuracy. The photobleaching of the SiC QDs is highly sensitive to the hydrogen or metal ion concentration in the colloid solution. These findings deepen the understanding of the properties of the fluorescent surface defects of the SiC QDs and pave the way for their applications in sensing.
关键词： photobleaching,silicon carbide quantum dots,surface defects,fluorescence mechanism
更新于2025-11-19 16:46:39
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Improvement of Optical and Thermal Properties for Quantum Dots WLEDs by Controlling Layer Location
摘要： The inorganic halide perovskite quantum dots (QDs) have been considered as a promising substitute for white light-emitting diodes (WLEDs). In this article, the green CsPbBr3 QDs and red K2SiF6:Mn4+ (KSF) phosphor were used to fabricate the conversion layers. Because the layers location is fundamental to the absorption priority of blue light, the location of KSF and QDs were controlled and the QDs-up type and QDs-down type WLEDs were made. The optical power, luminous efficiency, CCE and luminous intensity in the middle of QDs-up type are 13.83 mW, 13.54 lm/W, 11.94% and 2.65 cd, meaning 24.26%, 25.72%, 2.63% and 23.83% higher than those of QDs-down type, respectively. In addition, the QDs-up type has a lower correlated color temperature (CCT) shift of 734 K and a decreased highest temperature of 56.8℃ (51.5% and 14.9% lower). These key property differences indicate that the QDs-up type is more suitable for the application in display and backlight. In order to explore the reasons for these differences, the emission spectra, CCE, reflection rate, absorption rate and temperature curves of QDs or KSF films were also analyzed, which provided a better understanding of designing package structures.
关键词： layer location,thermal properties,quantum dots WLEDs,optical properties
更新于2025-11-19 16:46:39
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Novel fluorescent sensor using molecularly imprinted silica microsphere‐coated CdSe@CdS quantum dots and its application in the detection of 2,4,6‐trichlorophenol from environmental water samples
摘要： In this study, a high fluorescence sensitivity and selectivity, molecularly imprinted nanofluorescent polymer sensor (MIP@SiO2@QDs) was prepared using a reverse microemulsion method. 2,4,6-Trichlorophenol (2,4,6-TCP) was detected using fluorescence quenching. Tetraethyl orthosilicate (TEOS), quantum dots (QDs) and 3-aminopropyltriethoxysilane (APTS) were used as cross-linker, signal sources and functional monomer respectively. The sensor (MIP@SiO2@QDs) and the non-imprinted polymer sensor (NIP@SiO2@QDs) were characterized using infra-red (IR) analysis, X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The selectivity of MIP@SiO2@QDs was examined by comparing 2,4,6-TCP with other similar functional substances including 2,4-dichlorophenol (2,4-DCP), 2,6-dichlorophenol (2,6-DCP) and 4-chlorophenol (4-CP). Results showed that MIP@SiO2@QDs had better selectivity for 2,4,6-TCP than the other compounds. Fluorescence quenching efficiency displayed a good linear response at the 2,4,6-TCP concentration range 5–1000 μmol/L. The limit of detection (LOD) was 0.9 μmol/L (3σ, n = 9). This method was equally applicable for testing actual samples with a recovery rate of 98.0–105.8%. The sensor had advantages of simple pretreatment, good sensitivity and selectivity, and wide linear range and could be applied for the rapid detection of 2,4,6-TCP in actual samples.
关键词： quantum dots,2,4,6-trichlorophenol,fluorescence,molecularly imprinted polymers
更新于2025-11-19 16:46:39
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Effect of Excitation Wavelength on Optical Performances of Quantum-Dot-Converted Light-Emitting Diode
摘要： Light-emitting diode (LED) combined with quantum dots (QDs) is an important candidate for next-generation high-quality semiconductor devices. However, the effect of the excitation wavelength on their optical performance has not been fully explored. In this study, green and red QDs are applied to LEDs of different excitation wavelengths from 365 to 455 nm. The blue light is recommended for exciting QDs from the perspective of energy utilization. However, QD LEDs excited at 365 nm have unique advantages in eliminating the original peaks from the LED chip. Moreover, the green or red light excited by ultraviolet light has an advantage in colorimetry. Even for the 455 nm LED with the highest QD concentration at 7.0 wt%, the color quality could not compete with the 365 nm LED with the lowest QD concentration at 0.2 wt%. A 117.5% (NTSC1953) color gamut could be obtained by the 365 nm-excited RGB system, which is 32.6% higher than by the 455 nm-excited solution, and this can help expand the color gamut of LED devices. Consequently, this study provides an understanding of the properties of QD-converted LEDs under different wavelength excitations, and offers a general guide to selecting a pumping source for QDs.
关键词： excitation wavelength,colorimetry,quantum dots,light-emitting diode
更新于2025-11-19 16:46:39
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Graphene quantum dots and carbon nano dots for the FRET based detection of heavy metal ions
摘要： We demonstrate the development of a FRET based novel optical sensing system for the efficient detection of heavy metal pollutants. The studied sensing system is comprised of graphene quantum dots (GQDs) as donor and carbon nano dots (C-Dots) as an acceptor component. When these fluorescent nano-dots are within the FRET distance, fluorescence of the donor GQDs is quenched by the non-radiative energy transfer to acceptor C-Dots. Fluorescence lifetime is measured by time resolved photo-luminescence spectroscopic study to validate the FRET efficacy of the mix dot based sensor system. Upon gradual addition of heavy metals like arsenic (As5+) and mercury (Hg2+) into this sensor system, a significant amount of reduction in the investigated FRET signal is experienced. The detailed mechanisms of the molecular interactions between GQDs and C-Dots are thoroughly studied by UV–Visible absorption, infrared, steady state and time resolved spectroscopy.
关键词： FRET,Carbon nano dot,Metal ions,Sensor,Graphene quantum dot
更新于2025-11-19 16:46:39
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Tunable Photophysical Properties of Thiophene Based Chromophores: Conjoined Experimental and Theoretical Investigation
摘要： In this paper we report synthesis and photophysical properties of six novel thiophene derivatives (ThD) with D-π-A structure. The subject of this work are three nitrophenyls (1) BT-Th-NO2 and three benzonitriles (2) BT-Th-CN, substituted at different positions of aromatic ring ((a) ortho-, (b) meta- or (c) para-). Dyes were obtained using simple three-step synthesis and their chemical structures were confirmed by 1H and 13C NMR, IR as well as high resolution mass spectrometry. The influence of positional isomerism on optical properties has been explored experimentally and theoretically. The photophysical properties were investigated using steady-state as well as time-resolved spectroscopy and the obtained results were supported by quantum-chemical calculations. TD-DFT calculations indicated that charge-transfer strength can be correlated with the observed optical properties. In addition, the influence of the acceptor position on photoluminescence spectra, fluorescence quantum yields and emission lifetimes was specified. We show that ThD optical properties can be tuned in wide spectral range by the change made in only single step of synthesis reaction.
关键词： push-pull chromophores,Thiophene derivatives,TD-DFT,quantum yield,charge transfer
更新于2025-11-19 16:46:39
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Electrochemical capacitance-voltage profiling of nonuniformly doped GaAs heterostructures with SQWs and MQWs for LED applications
摘要： Light-emitting heterostructures with single and multiple GaAs/InGaAs quantum wells have been investigated by means of electrochemical capacitance-voltage (ECV) profiling. Capacitance-voltage characteristics were measured; concentration profiles of free charge carriers over the heterostructure depth as well as the intensity of quantum well filling by charge carriers were obtained. In heterostructures with a single quantum well (QW) we considered limitations of capacitance techniques for undoped QW profiling, which is situated near the metallurgic border of the p–n –junction. We made a detailed consideration of phenomena related to Debye smearing and we developed and analyzed the dependence of the space charge region width on the doping. Special attention was paid to investigation of the “blind” area. This was inspired by the practical problem from capacitance spectroscopy of semiconductors, when the researcher poses the task of obtaining a free charge carrier depth distribution profile as deep as possible in the space charge region, i.e. where the intensity of the electric field is maximum. Generally, the active QW of a LED heterostructure is placed deep in the space charge region, so reaching these regions is extremely important for practical problems. We present an evolution of capacitance-voltage characteristics during ECV profiling of nonuniformly doped p – n– heterostructures. For a heterostructure with multiple quantum wells we registered a response from 6 QWs.
关键词： capacitance-voltage profiling,heterostructure,quantum well,nonuniform doping,Electrochemical capacitance-voltage profiling,quantum dot,light-emitting diodes
更新于2025-11-14 17:28:48
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Role of interface potential barrier, Auger recombination and temporal coherence in In <sub/>0.5</sub> Ga <sub/>0.5</sub> As/GaAs quantum dot-based p-i-n light emitting diodes
摘要： In this work, we investigate the mechanisms that control the electroluminescence from p-i-n heterostructures containing self-assembled In0.5Ga0.5As quantum dots embedded inside a GaAs/Al0.3Ga0.7As quantum well as a function of temperature and applied bias. Our results reveal that the carrier dynamics at the interface between the quantum dot and the quantum well play a crucial role in the electroluminescence emission. At low temperatures, two distinct emission bands are observed. Initially at low bias current, we observe broad emissions from the quantum wells and wetting layers. Another dominant and sharp emission at lower energy arises from the quantum dots, but only at higher bias currents. We discuss how a potential barrier between the quantum dots and quantum well can control the density of injected carriers undergoing optical recombination. We have also investigated the role of carrier capture and escape, quantum-confined stark effect and band-filling effects in the electroluminescence emission. In addition, we demonstrate how measurements of temporal coherence of individual spectral peaks, can detect the presence of Auger recombination in quantum dots under high injection currents. Interestingly, a significant increase in the temporal coherence of quantum dot emissions is observed, which could be due to a decrease in Auger recombination with increasing temperature.
关键词： quantum dots,Auger recombination,electroluminescence,coherence
更新于2025-11-14 17:28:48
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Dy(III)-induced aggregation emission quenching effect of single-layered graphene quantum dots for selective detection of phosphate in the artificial wetlands
摘要： Carbon quantum dots (CQDs), prepared by one-step hydrothermal treatment of perylene-3,4,9,10-tetra-carboxylic dianhydride (PTCDA) and triethylamine (TEA), could be exfoliated or delaminated into single-layered graphene quantum dots (s-GQDs) with methanol for the first time, with fluorescence (FL) emission at 500 nm when excited at 417 nm. The s-GQDs, with more sufficient carboxyl groups on the surface than CQDs, could be induced to be aggregated by metal ion dysprosium (Dy3+), resulting in aggregation-induced emission quenching effect subsequently. However, the presence of phosphate (PO4 3-) destroys the Dy3+-induced aggregates of s-GQDs owing to the strong coordination between Dy3+ and PO4 3-, inducing the FL emission recovery of the s-GQDs and providing selective detection method of PO4 3- in the artificial wetlands with the linear range of 0.2–30 μM and determination limit of 0.1 μM (3σ).
关键词： s-GQDs-Dy3+ system,Phosphate detection,Single-layered graphene quantum dots,Carbon quantum dots
更新于2025-11-14 17:04:02