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Nonlinear optical properties of lens-shaped core/shell quantum dots coupled with a wetting layer: effects of transverse electric field, pressure, and temperature
摘要： In this study, we numerically determined the intra-band transition lifetime of carriers as well as, the linear, nonlinear, and total absorption coefficients fro lens-shaped core/shell quantum dot structures. Our computations considered the combined effects of the wetting layer, pressure, applied transverse electric field, temperature, and core/shell sizes. By using suitable choices for these parameters, we found that a red or blue shift in the energy of the absorption spectrum could be achieved. In addition, the largest absorption coefficient was obtained when an intense transverse electric field was applied along the diagonal of the cross section of the structure considered. Hence, the magnitude of the absorption coefficient increased by 50%. Moreover, our results showed that the transition lifetime of the carriers decreasedas the temperatureincreased, whereas it increased as the pressure increased. Comparative analysis of a semi-spherical core/shell quantum dot system showed that the transition lifetime was shorter than that of the lens-shaped core/shell quantum dot structure, which was 255 ns.
关键词： Nonlinear optical properties,Electric field,Pressure,Temperature,Lens-shaped core/shell quantum dot
更新于2025-09-19 17:13:59
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Glucose-derived porous carbon as a highly efficient and low-cost counter electrode for quantum dot-sensitized solar cells
摘要： Biomass-derived porous carbon is widely used in supercapacitors, carbon dioxide capture and lithium–sulfur batteries owing to its advantages such as wide sources, low cost and good stability. However, it is rarely used in quantum dot-sensitized solar cells (QDSCs). Here, glucose-derived porous carbon was obtained by hydrothermal carbonization followed with high-temperature KOH activation, and employed as an efficient counter electrode (CE) for QDSCs. The CV, EIS and Tafel-polarization analysis showed that porous carbon exhibits excellent catalytic activity for reduction of Sn2?. The CE based on porous carbon activated at 900 °C (C900) presents best performance with interface charge transfer resistance (Rct) of 2.4 Ω cm2 due to the synergy between high graphitization degree and large specific surface area. The power conversion efficiency (PCE) of the QDSCs assembled with a CdS/CdSe sensitized TiO2 photoanode and the C900 CE is up to 5.61% under one sun illumination. The excellent catalytic activity of C900 is attributed to its large specific surface area and porous structure and high degree graphitization. This suggests that glucose-derived porous carbon can become a potential low-cost and efficient CE material for QDSCs.
关键词： biomass-derived porous carbon,KOH activation,quantum dot-sensitized solar cells,hydrothermal carbonization,counter electrode,glucose
更新于2025-09-19 17:13:59
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Temperature dependent linewidth rebroadening in quantum dot semiconductor lasers
摘要： We experimentally and analytically investigate the influence of temperature on the linewidth of an InP quantum dot (QD) laser. The full width half maximum (FWHM) of the peak in the optical spectrum strongly depends on the pump current and rebroadens at high injection levels. We show that with increasing temperature these effects are amplified. Applying a QD laser model including the excited (ES) and ground state (GS) with detailed balance scattering rates, we are capable of reproducing the experimentally observed data qualitatively and thus show that a relatively simple QD-laser model is capable of capturing this complex behavior. Additionally, we include a temperature dependent energy band gap reduction needed to fit the data and show that this effect enhances the rebroadening effect for higher temperatures.
关键词： Solid State Physics,Linewidth,Quantum Dot Lasers
更新于2025-09-19 17:13:59
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Violet Light-Emitting Diodes Based on p-CuI Thin Film/n-MgZnO Quantum Dot Heterojunction
摘要： As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal?organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the ?rst time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin ?lm/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin ?lm layer was prepared by an iodination process of Cu ?lms, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm2-area pixel fabricated using the p-CuI thin ?lm at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.
关键词： p-CuI thin ?lm,device optimization,violet light-emitting diode,heterojunction,n-MgZnO quantum dot
更新于2025-09-19 17:13:59
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Highly Efficient Quantum Dot Light‐Emitting Diodes by Inserting Multiple Poly(methyl methacrylate) as Electron‐Blocking Layers
摘要： This work presents a new device architecture integrating multiple poly(methyl methacrylate) (PMMA) electron-blocking layers (EBL) in quantum dot light-emitting diodes (QD-LEDs). The device utilizes red-emitting CdSe/ZnS QD with a novel structure where multiple PMMA EBLs are sandwiched between a pair of QD layers. A systematic optimization of QD-LED structures has shown that a device including two PMMA and three QD layers performs the best, achieving a current efficiency of 17.8 cd A?1 and a luminance of 194 038 cd m?2. Numerical simulation of a simplified model of the proposed QD-LED structure verifies that the structure consisting of two PMMA and three QD layers provides significant improvement in electroluminescent intensity. The simulation provides further insight into the origin of the effect of the PMMA EBL by showing that the addition of PMMA EBL reduces the electron leakage from the active QD region and enhances electron confinement, leading to an increased electron concentration in the QD active layers and a higher radiative recombination rate. The experimental and theoretical studies presented in this work demonstrate that multiple layers of PMMA can act as efficient EBLs in the fabrication of QD-LEDs of improved performance.
关键词： simulation,device architecture,electron-blocking layer,electron leakage,poly(methyl methacrylate) (PMMA),quantum dot light-emitting diodes (QD-LED)
更新于2025-09-19 17:13:59
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Graphene quantum dot electrochemiluminescence increase by bio-generated H <sub/>2</sub> O <sub/>2</sub> and its application in direct biosensing
摘要： In this study, a novel signal-increase electrochemiluminescence (ECL) biosensor has been developed for the detection of glucose based on graphene quantum dot/glucose oxidase (GQD/GOx) on Ti foil. The proposed GQD with excellent ECL ability is synthesized through a green one-step strategy by the electrochemical reduction of graphene oxide quantum dot. Upon the addition of glucose, GOx can catalytically oxidize glucose and the direct electron transfer between the redox centre of GOx and the modified electrode also has been realized, which results in the bio-generated H2O2 for increase in GQD and realizes the direct ECL ECL signal detection of glucose. The signal-increase ECL biosensor enables glucose detection with high sensitivity reaching 5 × 10?6 to 1.5 × 10?3 mol l?1 in a wide linear range from 5 × 10?6 to 1.5 × 10?3 mol l?1. Additionally, the fabrication process of such GQD-based ECL biosensor is also suitable to other biologically produced H2O2 system, suggesting the possible applications in the sensitive detection of other biologically important targets (e.g. small molecules, protein, DNA and so on).
关键词： biosensor,graphene quantum dot,direct electron transfer,glucose oxidase,glucose
更新于2025-09-19 17:13:59
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Quantum Dot
摘要： Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1?x heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 μeV in a gate-defined single quantum dot, hosted in molecular-beam-epitaxy-grown 28Si/SixGe1?x. The valley splitting is monotonically and reproducibly tunable up to 15% by gate voltages, originating from a 6-nm lateral displacement of the quantum dot. We observe static spin relaxation times T1 > 1 s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, T1 is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.
关键词： valley splitting,spin relaxation,spin qubits,molecular-beam-epitaxy,silicon,quantum dot
更新于2025-09-19 17:13:59
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Boosting the Performance of Environmentally Friendly Quantum Dot‐Sensitized Solar Cells over 13% Efficiency by Dual Sensitizers with Cascade Energy Structure
摘要： Generally, high light-harvesting efficiency, electron-injection efficiency, and charge-collection efficiency are the prerequisites for high-efficiency quantum-dot-sensitized solar cells (QDSCs). However, it is fairly difficult for a single QD sensitizer to meet these three requirements simultaneously. It is demonstrated that these parameters can be felicitously balanced by a cosensitization strategy through the adoption of environmental-friendly Zn–Cu–In–Se and Zn–Cu–In–S dual QD sensitizers with cascade energy structure. Experimental results indicate that: i) the combination of the dual QDs can improve the light-harvesting capability of the cells, especially in the visible light window; ii) the cosensitization approach can facilitate electron injection, benefitting from the cascade energy structure of the two QD sensitizers employed; iii) the charge-collection efficiency can be remarkably enhanced by the suppressed charge-recombination process due to the improved QD coverage on TiO2. Consequently, this cosensitization strategy delivers a new certified efficiency record of 12.98% for liquid-junction QDSCs under AM 1.5G 1 sun irradiation. Moreover, the constructed cells exhibit good stability in a high-humidity environment.
关键词： environmentally friendly solar cells,quantum dot-sensitized solar cells,cosensitization
更新于2025-09-19 17:13:59
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Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential
摘要： We study the influence of quantum dot symmetry on the Rabi frequency and phonon-induced spin relaxation rate in a single-electron GaAs spin qubit. We find that anisotropic dependence on the magnetic field direction is independent of the choice of the gating potential. Also, we discover that relative orientation of the quantum dot, with respect to the crystallographic frame, is relevant in systems with C1v, C2v, or Cn (n ≠ 4r) symmetry. To demonstrate the important impact of the gating potential shape on the spin qubit lifetime, we compare the effects of an infinite-wall equilateral triangle, square, and rectangular confinement with the known results for the harmonic potential. In the studied cases, enhanced spin qubit lifetime is revealed, reaching almost six orders of magnitude increase for the equilateral triangle gating.
关键词： spin qubit,GaAs,spin relaxation rate,Rabi frequency,quantum dot,gating potential
更新于2025-09-19 17:13:59
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One‐Pot Exfoliation of Graphitic C <sub/>3</sub> N <sub/>4</sub> Quantum Dots for Blue QLEDs by Methylamine Intercalation
摘要： Here, a simplified synthesis of graphitic carbon nitride quantum dots (g-C3N4-QDs) with improved solution and electroluminescent properties using a one-pot methylamine intercalation–stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g-C3N4) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g-C3N4-QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta-potential (?41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light-emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g-C3N4-QDs as the emitting layer, the LED demonstrates ≈60× higher luminance (605 vs 11 Cd m?2) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g-C3N4 QLEDs, though further work is needed to improve device stability.
关键词： graphitic carbon nitride,quantum dot light-emitting diodes,metal-free semiconductors,hydrothermal exfoliation
更新于2025-09-19 17:13:59