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Switchable Multi-Color Solution-Processed QD-laser
摘要： In this paper, for the first time, the switchable two-color quantum dot laser has been realized considering solution process technology, which has both simultaneous and lonely lasing capability exploiting selective energy contacts. furthermore, both channels can be modulated independently, which is a significant feature in high-speed data transmission. To this end, utilizing superimposed quantum dots with various radii in the active layer provides the different emission wavelengths. In order to achieve the different sizes of QDs, solution process technology has been used as a cost-effectiveness and fabrication ease method. Moreover, at the introduced structure to accomplish the idea, the quantum wells are used as separate selective energy contacts to control the lasing channels at the desired wavelength. It makes the prominent device have simultaneous lasing at different emission wavelengths or be able to lase just at one wavelength. the performance of the proposed device has been modeled based on developed rate equation by assuming inhomogeneous broadening of energy levels as a consequence of the size distribution of quantum dots and considering tunnel injection of carriers into the quantum dots via selective energy contacts. Based on simulation results, the simultaneous lasing in both or at one of two wavelengths 1.31 μm and 1.55 μm has been realized by the superimposition of two different sizes of InGaAs quantum dots in a single cavity and accomplishment of selective energy contacts. Besides, controlling the quantum dot coverage leads to managing the output power and modulation response at the desired wavelengths. By offering this idea, one more step is actually taken to approach the switchable QD-laser by the simple solution process method.
关键词： solution process technology,high-speed data transmission,multi-wavelength lasing,quantum dot laser,selective energy contacts
更新于2025-09-23 15:21:01
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Temperature-Independent Performance of an 8-Layer ?? ~1.3 ??m InAs/GaAs Quantum-Dot Laser
摘要： We report high-performance broad-area eight-layer InAs/GaAs quantum-dot lasers (QDLs) emitting at 1.3 μm in the pulse and continuous-wave (CW) operations. Operational characteristics of the fabricated QDLs, including the emission wavelength, output power, threshold-current density, di?erential quantum e?ciency, and characteristic temperature, are investigated at di?erent temperatures. For as-cleaved facets of 100 μm wide and 1 mm cavity-length device, an output power of 100 mW is achieved at 1 kHz with 5% duty cycle and 49 mW in the CW operation. The device exhibits a threshold-current density of 56 A/cm2 at room temperature in both the operating modes and increases to 71 and 80 A/cm2 the in the pulse and CW modes, respectively, at 343 K. Over a temperature range of 298 K to 343 K, we calculate the threshold characteristic temperature of 166 K and 119 K and slope-e?ciency characteristic temperature of 2061 K and 408 K in the pulse and CW modes, respectively. The laser exhibits di?erential quantum e?ciency of 41% and 32% in the pulse and CW mode, respectively. We observed that the device exhibited negligible dependence over a temperature range of 298 K to 343 K.
关键词： characteristic temperature,quantum-dot laser,di?erential quantum e?ciency,semiconductor laser
更新于2025-09-19 17:13:59
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Radio-frequency analysis of self-mode-locked quantum dot laser
摘要： We numerically study and confirm experimentally a transition from unlocked multi-modal emission to self-mode-locked emission of a single-section InAs/InGaAs quantum dot laser in dependence on the laser injection current. At this transition, the radio-frequency beat note linewidth as well as the modal power fluctuations quantified by an integrated relative intensity noise of all modes are found to be significantly reduced. A linewidth reduction from several hundreds of MHz to below 1 MHz is observed, with the lowest value observed being as small as 20 kHz. Experiment and simulation results are in good qualitative and quantitative agreement.
关键词： quantum-dot laser,Self mode-locking,relative intensity noise,semiconductor laser,radio-frequency linewidth
更新于2025-09-16 10:30:52
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Optical feedback stabilization of a self-mode-locked quantum dot laser
摘要： In this work, the impact of fine-delay tunable dual-cavity optical self-feedback (DC-OFB) on the pulse timing stability and pulse repetition rate (RR) frequency of a 1 mm long single-section self-mode-locked quantum-dot (QD) laser emitting at 1255 nm is studied experimentally and by simulation. By tuning both microscopic dual-cavity delay lengths, we find a maximum RR tuning range of 70 MHz. A two-fold periodic structure is apparent every 25 ps which corresponds to the internal round trip time of the laser. A timing jitter (TJ) reduction by a factor of 16 down to 3.5 fs is obtained. Simulation results reproduce the experimentally observed RR trends with a good qualitative and quantitative agreement.
关键词： quantum-dot laser,Self mode-locking,timing jitter,optical feedback,semiconductor laser,radio-frequency linewidth
更新于2025-09-16 10:30:52
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Passively mode-locked quantum dot laser subject to dual long cavity time-delayed optical feedback
摘要： In this contribution, we study experimentally the impact of two long external passive optical cavities on the repetition rate and timing jitter of a monolithic passively mode-locked InAs/InGaAs quantum dot laser. The dual cavity scheme allows to fully suppress feedback induced sidebands in the radio-frequency spectrum. By fine delay control of the optical self-feedback delay lengths, a repetition rate tunability of 9.4 MHz is achieved. The lowest repetition rate line width amounts to less than 50 Hz, corresponding to a timing jitter of 1.7 fs. We explain the experimentally observed timing jitter and repetition rate trends qualitatively by adapting a versatile simple time-domain model. Both experiment and simulations indicate the strongest pulse train timing jitter reduction at feedback lengths that yield the lowest repetition rate frequency deviation.
关键词： quantum-dot laser,timing jitter,Passive mode-locking,Optical feedback,semiconductor laser,radio-frequency linewidth
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Large-scale arrayed waveguide grating router for T-band communication
摘要： bandwidth was more than 100 nm, and whole T-band can be covered by three different gain chips. The gain chip has high power output up to 190 mW with an injection current of 800 mA as shown in Fig. 3. It can be operated more than 95 ℃. The estimated life is longer than 106 hours. SOA modules were fabricated using QD gain chips. The T-band (1000-1260 nm), which offers more than 60 THz worth of bandwidth and wider than C- and L-band combined. The large scale photonic router using 3-stage arrayed-waveguide grating for T-band and O-band is configured.
关键词： quantum dot laser,optical communication,arrayed waveguide grating,T-band,AWGR
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Pulse Timing and Amplitude Stability of a Monolithic Passively Mode-Locked Quantum Dot Laser at 1310 nm Directly Grown on Silicon
摘要： Passively mode-locked (PML) InAs/InGaAs quantum dot (QD) lasers directly grown on silicon and emitting at 1310 nm are promising sources for high-speed, high-capacity communication applications. To overcome the low light generation efficiency of silicon, QD are directly grown on Si [1]. Their ultrafast carrier dynamics, broadband gain spectra and easily saturated gain and absorption allow for the generation of ultra-short optical pulses as demonstrated very recently [2]. The QD laser epitaxial growth was completed on an on-axis (001) Si substrate with a 45 nm GaP buffer layer by solid-source molecular beam epitaxy [3]. In this contribution, the pulse train stability of a PML QD laser consisting of a five-stack InAs/InGaAs dots-in-a-well structure is experimentally studied. The total length of the laser was designed to be 4.5 mm with a saturable absorber length corresponding to 18 %. The isolation length between gain and absorber section is 10 μm. The laser emits optical pulse trains at a repetition rate (RR) of 9.4 GHz. Fig. 1a depicts the pulse-to-pulse timing jitter (TJ) σpt p = 0.5 [4] with Δν being the RR line width in the radio-frequency (RF) spectrum and ν0 being the RR. The TJ is calculated from the timing phase noise (TPN) power spectral densities (PSD) [5] in dependence on the absorber reverse bias voltage and the gain current. Low TJ values of around 100 fs to 200 fs can be identified in the majority of biasing regimes. In the regime for shortest pulses with pulse widths below 5 ps, located just above lasing threshold and at gain currents below 120 mA, very low TJ values (color coded purple) are obtained. A lowest TJ of 9 fs (-3 dB fundamental RR beat note line width of 400 Hz) is obtained at a gain current of 105 mA and an absorber reverse bias voltage of 0.6 V, slightly above lasing threshold. The corresponding TPN PSD is depicted in Fig. 1b. The optical pulse train amplitude jitter (AJ) is quantified as a relative standard deviation of the pulse intensity variations [6]. As indicated in Fig. 1c, an AJ below 5 % is attained in the short pulse regime which is located at gain currents below 120 mA and at higher currents and low saturable absorber voltages (color coded purple). Such low AJ denotes excellent stable operation. Fig. 1d depicts the nonlinear intensity auto-correlation signal representing the shortest deconvoluted pulse width of 1.7 ps at 125 mA and 2.6 V absorber reverse bias voltage. The corresponding time-bandwidth product amounts to 1.1. Pulses with pulse widths shorter than 10 ps where obtained at all biasing conditions except for high gain currents above 140 mA and small absorber reverse bias voltages below 0.6 V. In this small regime pulse widths of 10 ps to 18 ps are obtained. In conclusion, stable optical pulse train generation by a monolithic passively mode-locked InAs/InGaAs quantum dot laser directly grown on silicon with a lowest optical pulse width of 1.7 ps, a lowest timing jitter of 9 fs (400 Hz RR beat note line width) and a negligible relative amplitude jitter are experimentally reported.
关键词： timing jitter,silicon,quantum dot laser,amplitude jitter,mode-locked
更新于2025-09-16 10:30:52
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Dynamics of InAs/GaAs quantum dot lasers epitaxially grown on Ge or Si substrate
摘要： Growing semiconductor laser sources on silicon is a crucial but challenging technology for developing photonic integrated circuits (PICs). InAs/GaAs quantum dot (Qdot) lasers have successfully circumvented the mismatch problem between III–V materials and Ge or Si, and have demonstrated efficient laser emission. In this paper, we review dynamical characteristics of Qdot lasers epitaxially grown on Ge or Si, in comparison with those of Qdot lasers on native GaAs substrate. We discuss properties of linewidth broadening factor, laser noise and its sensitivity to optical feedback, intensity modulation, as well as mode locking operation. The investigation of these dynamical characteristics is beneficial for guiding the design of PICs in optical communications and optical computations.
关键词： quantum dot laser,photonic integrated circuits,laser noise,modulation dynamics,mode locking
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Improving Reliability of InAs Quantum Dot Lasers on Silicon Substrates
摘要： Using correlated electron microscopy techniques, we structural properties of characterize optoelectronic and dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.
关键词： quantum dot laser,STEM,dislocation,silicon photonics,cathodoluminescence,III-V on Si
更新于2025-09-11 14:15:04