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Efficient Structure for InP/ZnS-Based Electroluminescence Device by Embedding the Emitters in the Electron-Dominating Interface
摘要： The charge-carrier distribution has been an important parameter in determining the efficiency of quantum-dot-based light-emitting diodes (QLEDs). In this Letter, we demonstrate a new inverted device structure of ITO/ZnO/polyethylenimine/quantum dots (QDs)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)/4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP)/MoO3/Al for improving the efficiency of InP-QD-based QLEDs. By introducing a thin layer of electron transport materials, the hole accumulation at the hole transport layer and the QD interface is largely reduced, which suppresses the quenching effect of holes on the QD emission. Compared with the conventional device structure with the emitters at ZnO/CBP pn junction, the peak current efficiency (external quantum efficiency) increases from 3.83 (5.17 cd/A) to 6.32% (8.54 cd/A) by imbedding the QDs at the electron-dominating interface of ZnO/TPBi. The analysis reveals that an internal quantum efficiency of nearly 100% is achieved for the InP-QD-based device (with a photoluminescence quantum yield of 32%). This work provides an alternative device structure for achieving high-efficiency QLED devices.
关键词： electron transport materials,quantum-dot-based light-emitting diodes,internal quantum efficiency,charge-carrier distribution,InP-QD-based QLEDs
更新于2025-09-23 15:19:57
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A “Positive Incentive” Approach to Enhance Operational Stability of Quantum Dot based Light-Emitting Diode
摘要： Balanced charge injection promises high efficiency of quantum dot based light-emitting diodes (QD-LEDs). Most widely used approach to realize charge injection balance is impeding the injection rate of the dominant charge carrier with energetic barriers. However, these approaches often accompany unwanted outcomes (e.g., the increase in operation voltage) that sacrifice the operation stability of devices. Herein, a “positive incentive” approach is proposed to enhance the efficiency and the operational stability of QD-LEDs. Specifically, the supply of hole, an inferior carrier than its counterpart, is facilitated by adopting a thin fullerene (C60) interlayer at the interface between hole injection layer (MoOX) and hole transport layer (CBP). The C60 interlayer boosts the hole current by eliminating the universal energy barrier, lowers the operation voltage of QD-LEDs, and enhances the charge balance in the QD emissive layer within working device. Consequently, QD-LEDs benefitting from the adoption of C60 interlayer exhibit significantly enhanced device efficiency and operation stability. Grounded on the quantitative assessment of the charge injection imbalance within the QD emissive layer, the impact of electrical parameters of QD-LEDs to their optoelectronic performance and operational stability is also discussed.
关键词： hole injection barrier,operational stability,fullerene,quantum dot based light-emitting diodes,charge injection balance
更新于2025-09-16 10:30:52
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Highly Efficient and Bright Inverted Top‐Emitting InP Quantum Dot Light‐Emitting Diodes Introducing a Hole‐Suppressing Interlayer
摘要： InP quantum dots (QDs) based light-emitting diodes (QLEDs) are considered as one of the most promising candidates as a substitute for the environmentally toxic Cd-based QLEDs for future displays. However, the device architecture of InP QLEDs is almost the same as the Cd-based QLEDs even though the properties of Cd-based and InP-based QDs are quite different in their energy levels and shapes. Thus, it is highly required to develop a proper device structure for InP-based QLEDs to improve the efficiency and stability. In this work, efficient, bright, and stable InP/ZnSeS QLEDs based on an inverted top emission QLED (ITQLED) structure by newly introducing a “hole-suppressing interlayer” are demonstrated. The green-emitting ITQLEDs with the hole-suppressing interlayer exhibit a maximum current efficiency of 15.1–21.6 cd A?1 and the maximum luminance of 17 400–38 800 cd m?2, which outperform the recently reported InP-based QLEDs. The operational lifetime is also increased when the hole-suppressing interlayer is adopted. These superb QLED performances originate not only from the enhanced light-outcoupling by the top emission structure but also from the improved electron–hole balance by introducing a hole-suppressing interlayer which can control the hole injection into QDs.
关键词： indium phosphide,top emitting structure,efficiency,quantum dot–based light emitting diodes (QLEDs),hole suppressing interlayer
更新于2025-09-12 10:27:22