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Ensuring Radiation Resistance of Fiber Optic Gyroscopes and Ways to Improve It
摘要： The problem of ensuring the radiation resistance of fiber-optic gyroscopes and their main components (optical fibers, elements of integrated optics, optical sources, electronic components and optical materials) is analyzed on the basis of Russian and foreign publications. Possible ways of radiation resistance improvement are considered.
关键词： fiber-optic gyro,radiation resistance,review
更新于2025-09-23 15:22:29
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[IEEE 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Odessa, Ukraine (2018.9.4-2018.9.7)] 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Radiation Resistance of Resonant Impedance Monopole Placed on Metal Square Screen
摘要： The asymptotical solution of the 3-D vector problem of diffraction of the field of the monopole with the uniform distributed surface impedance, placed on the ideally conducting rectangular screen with the sides sizes L and W is obtained. Within the frame of the uniform geometrical theory of diffraction the radiation field in a far zone is represented as the sum of the geometric optics field from an impedance monopole placed on infinite screen, and the diffracted fields from the rectangular screen edges. The radiation resistances are calculated by the Poynting vector method as the functions of the monopole’s surface impedance and the sizes of monopole and screen. The input impedances of the same monopoles on the square screens have calculated using commercial software too. It is shown that at all surface impedances and monopole’s lengths the radiation and input resistances reach maximum at L=W=0.9 of wavelength.
关键词： impedance monopole,surface impedance,square screen,radiation resistance,input impedance,amplitude
更新于2025-09-23 15:21:21
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Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell
摘要： This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface ?eld (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. However, the radiation resistance of the GaInP BSF cell was improved. After irradiation by 1 MeV electron beam with a cumulative dose of 1015 e/cm2, the Jsc declined by 4.73% and 6.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively; the e?ciency degradation was 13.64% and 14.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively, leading to a reduced degradation level of 6%. The mechanism for GaInP BSF to improve the radiation resistance of GaInP/GaInAs/Ge triple-junction solar cells is also discussed in this work. Similar results were obtained when irradiation cumulative doses varied from 1 × 1014 e/cm2 to 1 × 1016 e/cm2.
关键词： back-surface ?eld,electron beam irradiation,GaInP/GaInAs/Ge triple-junction space solar cell,radiation resistance
更新于2025-09-23 15:19:57
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Effect of Temperature and Gamma-Ray Irradiation on Optical Characteristics of Fiber Bragg Grating Inscribed Radiation-Resistant Optical Fiber
摘要： A new radiation-hard germano-silicate glass optical fiber with a pure silica glass buffer and a boron-doped silica glass inner cladding was fabricated for temperature sensor application based on the fiber Bragg grating (FBG) under γ-ray irradiation environment. The temperature dependences of optical attenuation at 1550.5 nm and Bragg reflection wavelength shift from 18 ℃ to 40 ℃ before the γ-ray irradiation were about 4.57×10–4 dB/℃ and 5.48 pm/℃, respectively. The radiation-induced optical attenuation at 1550.5 nm and the radiation-induced Bragg reflection wavelength shift under the γ-ray irradiation with the total dose of 22.85 kGy at 35 ℃ were about 0.03 dB/m and 0.12 nm, respectively, with the γ-ray irradiation sensitivity of 5.25×10–3 pm/Gy. The temperature and the γ-ray irradiation dependence of optical attenuation at 1550.5 nm in the FBG written fiber with boron-doped silica glass inner cladding were about 6 times and 4 times lower than that in the FBG written fiber without boron-doped silica glass inner cladding under a temperature change from 18 ℃ to 40 ℃ and the γ-ray irradiation with the total dose of 22.85 kGy at 35 ℃, respectively. Furthermore, the effect of temperature increase on the Bragg reflection wavelength of the FBG written fiber with boron-doped silica inner cladding was much larger about 1000 times than that of the γ-ray irradiation. However, no influence on the reflection power of the Bragg wavelengths and the full width at half maximum (FWHM) bandwidth under temperature and the γ-ray irradiation change was found. Also, after the γ-ray irradiation with the dose of 22.85 kGy, no significant change in the refractive index was found but the residual stresses developed in the fiber were slightly relaxed or retained.
关键词： Optical fiber,radiation-induced attenuation,fiber Bragg grating,temperature sensor,radiation resistance
更新于2025-09-11 14:15:04
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Changes in Critical Parameters of GdBa <sub/>2</sub> Cu <sub/>3</sub> O <sub/> 7? <i>x</i> </sub> HTS-2G Due to Swift-Ion Irradiation
摘要： The influence of the ion irradiation 132Xe27t (167 MeV), 86Kr17t (107 MeV), and 40Ar8t (48 MeV) on critical properties (Ic, Tc, ΔTc) of superconductor tapes of the 2-nd generation GdBa2Cu3O7(cid:1)x (SuperOx) are studied. It is shown that the critical current slightly increases and the width of the transition to the superconducting state reduces at low doses of Xe-irradiation. The obtained results enable the authors to estimate the radiation resistance of this HTS-2G tape to the used irradiation. As for the critical temperature, its decrease begins at considerably higher fluences than the decrease in the critical current, and ΔTc also changes. The decrease in the critical current can be explained by the irradiation-induced disorder of coherent boundaries between crystallites. At the instant of Tc to zero, it is possible to roughly estimate the track radii induced by the ions.
关键词： critical temperature,radiation defects,HTS-2G tape,critical current,radiation resistance
更新于2025-09-10 09:29:36
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Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
摘要： The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.
关键词： radiation resistance,nonequilibrium processes,γ-neutron irradiation,microwave transistors,semiconductor structures
更新于2025-09-09 09:28:46