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Impact of sulphurization environment on formation of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 films using electron beam evaporated stacked metallic precursors
摘要： The superiority of copper zinc tin sulphide (Cu2ZnSnS4; CZTS) over the existing absorber layer materials is inevitable owing to its cheap, non-toxic and earth abundant constituents with high absorption coefficient value. In the present study, CZTS films are prepared by sulphurizing electron beam deposited precursors of glass/Cu/Zn/Sn/Cu and glass/Cu/Sn/Zn/Cu stacking sequences in two different environments i.e., elemental S powder and 5% H2S + N2 gas at different ramping rates. The effect of sulphurization environment and sulphurization ramping rate on the formation of CZTS is investigated using X-ray diffraction and Raman spectroscopy. The morphology and composition of the films are analysed respectively using field emission gun scanning electron microscopy and energy dispersive X-ray spectroscopy. It is observed that films prepared in elemental S powder at a low ramping rate exhibit better crystallinity with less impurity phases. The presence of ZnS is observed in all the films, while the presence of SnS is observed in films prepared with H2S gas alone, thus concluding that sulphurization in the presence of elemental S powder at a low ramping rate is highly favourable for CZTS film formation. CZTS films with minor ZnS impurity with a bandgap of 1.48 eV is successfully fabricated by using a glass/Cu/Zn/Sn/Cu precursor stack.
关键词： ramping rate,Electron beam evaporation,CZTS
更新于2025-09-23 15:22:29
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The effect of annealing conditions: temperature, time, ramping rate and atmosphere on nanocrystal Cu2ZnSnS4 (CZTS) thin film solar cell properties
摘要： Cu2ZnSnS4 (CZTS) nanoparticles were fabricated successfully using the hot injection method; CZTS films were deposited by spin coating of nanocrystal ink. The aim of this work is to study the effect of annealing parameters: temperature, time, ramping rate and atmosphere on CZTS thin film structure and optical properties. XRD, Raman Spectroscopy, SEM, EDX mapping are used to analyse the films and they demonstrate the increase in quality and improvement in the crystallinity of CZTS and the homogeneity of elements which is one of the important factors for CZTS thin film solar cells. The crystallinity, structure and chemical composition of CZTS thin films increased and improved under annealing in H2S+N2 atmosphere which demonstrated that annealing at 500 oC for 1 h with a ramping rate of 10 oC/min under H2S+N2 atmosphere is a suitable condition for the fabrication of CZTS thin films used in solar cell devices.
关键词： Annealing temperature,CZTS,Cu2ZnSnS4,Annealing time,Thin film solar PV,Annealing atmosphere,Annealing ramping rate
更新于2025-09-16 10:30:52