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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO <i> <sub/>x</sub></i> bottom electrode for the La-doped Pb(Zr,Ti)O <sub/>3</sub> ferroelectric capacitor
摘要： In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an important role in obtaining good electrical characteristics and high manufacturing yield of ferroelectric random access memory (FeRAM). The optimal O2 content of around 2% inhibits the growth of randomly oriented La-doped Pb(Zr,Ti)O3 (PLZT) grains near the PLZT surface, resulting in the growth of highly {111}-oriented PLZT. We found that the Pt bottom electrode grown on an AlOx layer can further suppress the formation of randomly oriented PLZT grains near the PLZT surface and increases the optimal O2 content range from 2 to 50%, which can enlarge the manufacturing process margin of PDA. It is proven that the AlOx layer blocks the di?usion of lead oxides (PbOx) from PLZT to SiO2 interlayers through Pt and promotes pyrochlore-perovskite transformation near the bottom electrode during PDA.
关键词： ferroelectric random access memory,bottom electrode,postdeposition annealing,PLZT,manufacturing margin
更新于2025-09-10 09:29:36
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Electrical and optical properties of metal-sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film
摘要： Metal-sandwiched zinc oxide (ZnO)/titanium (Ti)/copper (Cu)/Ti/ZnO thin film systems were fabricated using magnetron sputtering technology and then annealed using a rapid thermal annealing system at temperatures from 100 to 400°C. The influence of the Ti film thicknesses and annealing temperatures on the surface morphologies, sheet resistance and optical properties were studied. The surface morphologies change a little with the annealing temperature rises. The sheet resistances reduce with the Ti film thickness or annealing temperature increasing. Both the max transmittance and figure of merit reduce with the increase of Ti film thickness. The max transmittance increases with the temperature increasing from 100 to 300°C and then reduces. However, the figure of merit increases with the temperature increasing which indicates that the metal-sandwiched ZnO/Ti/Cu/Ti/ZnO thin film system annealed at 400°C has the optimal performance.
关键词： ZnO,optical properties,annealing,magnetron sputtering,Cu,electrical properties,transparent conductive thin film,Ti
更新于2025-09-10 09:29:36
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Phase-separated structures of random methacrylate copolymers with pendant POSS moieties
摘要： The phase separation of random methacrylate copolymers with the pendant polyhedral oligomeric silsesquioxanes (POSS) moieties was studied. For the random copolymers of the phenyl-substituted POSS methacrylate (PhPOSSMA) and butyl methacrylate (BMA), the layer-like phase-separated structures were obtained from the copolymers with over circa 20 wt % of PhPOSSMA after thermal annealing in the bulk. The copolymers with larger PhPOSSMA content over 40 wt % showed periodic phase-separated structure with the periodic length ranging from 9.0 to 5.1 nm depending on the composition. The phase separation did not occur by solvent annealing in the bulk. On the other hand, no phase-separated structure was formed from the random copolymer with circa 50 wt % of isobutyl-substituted POSSMA (i-BuPOSSMA) and BMA after thermal annealing. In addition, the phase separation did not occur for both of the random copolymers of PhPOSSMA and i-BuPOSSMA with methyl methacrylate. The resulting phase-separated structures were well characterized by using wide-angle X-ray scattering, small-angle X-ray scattering, and transmission electron microscopy image.
关键词： random copolymer,POSS,phase-separated structure,thermal annealing,poly(methacrylate)
更新于2025-09-10 09:29:36
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16.2: SFT with Low Reflection
摘要： SFT-TFT module is one type of IPS mode. The low reflection is one of the most important parameters for LC display performance that the reflection of the SFT-TFT module can be decreased by improving the top of the SFT surface ITO.
关键词： ITO annealing,Low reflection,Backside ITO,Low refractive index
更新于2025-09-10 09:29:36
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Reusable surface-enhanced Raman substrates using microwave annealing
摘要： In this work, we report the fabrication of large-scale homogeneous surface-enhanced Raman scattering (SERS) substrates using a microwave annealing (MWA) process on Ag thin films on silicon, using a typical low-cost domestic microwave oven, avoiding the use of chemicals and stabilizing agents, or time-consuming and expensive approaches. We provide evidence that in 5–15 s, uniform and reproducible SERS substrates of several centimeter squares can be grown, providing a Raman signal enhancement of five orders of magnitude, for an incident Raman laser with an intensity as low as ~ 0.035 mW, against the characterization of Rhodamine 6G, which is a standard test molecule for SERS. Moreover, we tested the reusability of the fabricated MWA SERS substrates under conditions as tough as ultrasonic sonication in isopropyl alcohol and acetone for 15 min, respectively, and we demonstrate that our SERS substrates can be efficiently reused for more than six times after sonication, which is quite critical since it minimizes the cost of the procedure to minimum.
关键词： Surface-enhanced Raman scattering (SERS),Ag thin films,Rhodamine 6G (R6G),Reusable substrates,Microwave annealing (MWA)
更新于2025-09-10 09:29:36
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Tailoring the Structural and Optical Parameters of Eu3+:CeO2-SiO2 Nanopowder Via Thermal Treatment
摘要： Nanocrystalline Eu3+:CeO2-SiO2 powder samples were prepared by sol-gel technique. This technique is suitable for large-scale production and it is also a cost effective process. The prepared samples were annealed at different temperatures which were characterized by many complementary techniques. The formation of cubic fluorite structure of CeO2 nanocrystal with a uniform distribution was confirmed by x-ray diffraction (XRD) and transmission electron microscopy (TEM). The average nanocrystalline size has been calculated as 3, 7 and 15 nm using Debye-Scherrer formula for different annealed samples. The calculated nanocrystalline sizes were compared with W-H plot and TEM histograms. It was investigated that FWHM of diffraction peaks decreases with increase in temperature results in increase nanocrystalline size. The FTIR spectroscopy provides the valuable information and identification of different chemical group/bonds present in the prepared samples. It is found that if we fixed the dopant concentration, then particle size, morphology and band gap energy of prepared nanopowder can be tailored by applying the annealing conditions. Comparative studies of absorption spectra and corresponding band gap energies have been done and a red shift has been observed in absorption spectra with thermal treatment. The shift of the optical absorption edge of prepared nanopowder towards lower energies increases its utilization in the visible region specially photocatalytic activity.
关键词： Thermal annealing,Absorption spectra,Structural properties,Nanopowder,Band gap energy
更新于2025-09-10 09:29:36
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Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing
摘要： Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in graphene limits its utilization in electronic devices. To overcome this issue, researchers have attempted to chemically modify the pristine graphene lattice in order to engineer its electronic bandstructure. While significant progress has been achieved, aggressive chemistries are often employed which are difficult to pattern and control. In an effort to overcome this issue, here we utilize the well-defined van der Waals interface between crystalline Ge(110) and epitaxial graphene to template covalent chemistry. In particular, by annealing atomically pristine graphene-germanium interfaces synthesized by chemical vapor deposition under ultra-high vacuum conditions, chemical bonding is driven between the germanium surface and the graphene lattice. The resulting bonds act as charge scattering centers that are identified by scanning tunneling microscopy. The generation of atomic-scale defects is independently confirmed by Raman spectroscopy, revealing significant densities within the graphene lattice. The resulting chemically modified graphene has the potential to impact next-generation nanoelectronic applications.
关键词： graphene,van der Waals interfaces,germanium,Raman spectroscopy,chemical bonding,scanning tunneling microscopy,thermal annealing
更新于2025-09-10 09:29:36
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Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer
摘要： Pt/Au, Ni/Au, Ni/Pt/Au Schottky contacts were placed on a quaternary Al0.84In0.13Ga0.03N epilayer. The electrical and structural properties of the as-deposited Pt/Au, Ni/Au, Ni/Pt/Au and annealed Ni/Pt/Au Schottky contacts were investigated as a function of annealing temperature using current–voltage (I–V), capacitance–voltage (C–V), and high resolution x-ray diffraction measurements (HR-XRD). According to the I–V, Norde, and C–V methods, the highest Schottky barrier height (SBH) was obtained for the Pt/Au (0.82 eV (I–V), 0.83 eV (Norde), and 1.09 eV (C–V)) contacts when they were compared with the other as-deposited Schottky contacts. The estimated SBH of the annealed Ni/Pt/Au Schottky contacts, calculated from the I–V results, were 0.80 eV, 0.79 eV, and 0.78 eV at 300°C, 400°C, and 500°C, respectively. The SBH decreases with an increase in the annealing temperature up to 500°C compared with that of the as-deposited Ni/Pt/Au Schottky contact. The observed extra peaks in the annealed samples confirm the formation of a new interfacial phase at the interface. However, the diffraction patterns of the annealed Schottky contacts did not change as a function of the annealing temperature. The higher ideality factors values were obtained for as-deposited Pt/Au (5.69), Ni/Au (6.09), and Ni/Pt/Au (6.42) Schottky contacts and annealed Ni/Pt/Au (6.42) Schottky contacts at 300°C (6.89), 400°C (7.43), and 500°C (8.04). The higher n results can be attributed to current-transport mechanisms other than thermionic emission, such as dislocation related tunneling.
关键词： A3. metalorganic chemical vapor deposition (MOCVD),annealing effects,A1. Schottky,B1. AlInGaN
更新于2025-09-10 09:29:36
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Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
摘要： We investigated annealing effects on the Ga2O3 thin films deposited on c-sapphire by plasma-enhanced atomic layer deposition. A metastable Ga2O3 films was deposited on c-sapphire substrate by PEALD with high plasma power at 250 °C. The (2?0?1) preferred orientation b-Ga2O3 films were obtained after annealing in oxygen atmosphere. Structure and surface analysis revealed that the annealed films had more fine-grained surface features. The film annealed for 2 h exhibited the best crystallinity. The bandgap of the as-deposited and annealed films for 2 h were 4.56 and 4.97 eV, respectively. The process of high-temperature annealing contributed gallium, oxygen atoms to obtain enough energy to migrate to the suitable location and increased the vigilance of crystallinity.
关键词： Thin films,Ga2O3,Epitaxial growth,XRD,Annealing
更新于2025-09-10 09:29:36
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Fatigue of Materials at Very High Numbers of Loading Cycles (Experimental Techniques, Mechanisms, Modeling and Fatigue Life Assessment) || Three-dimensional characterization of duplex stainless steel by means of synchrotron radiation X-ray diffraction imaging techniques
摘要： The combined use of X-ray diffraction contrast tomography (DCT) and X-ray phase imaging techniques like phase contrast tomography and holotomography enable non-destructive characterization of the three dimensional grain and phase microstructure in austenitic-ferritic duplex stainless steel. Phase contrast tomography highlights discontinuities of the refractive index inside a material and is therefore ideally suited for imaging fatigue cracks and phase boundaries. The acquisition of phase images at multiple propagation distances allows for the two-step procedure of phase retrieval and tomographic reconstruction of the refractive index via holotomography. Combined with appropriate regularization and segmentation techniques, this technique provides the sensitivity to discriminate the minute difference in electron density between the austenitic and ferritic constituent phases of duplex steel. X-ray diffraction contrast tomography on the other hand exploits X-ray Bragg diffraction signals of the individual crystallites and yields three-dimensional grain orientation maps for each of the constituent phases (austenite and ferrite). Merging the results of both imaging modalities, the fidelity of the inter-phase boundaries (derived from X-ray holotomography) can be used to enhance the spatial fidelity of the 3D grain orientation maps produced by DCT. We have combined this microstructure characterization scheme with time lapse observations of a propagating fatigue crack by means of repeated phase contrast tomography inspection during an interrupted fatigue test. Access to the crack growth history and the crystallographic microstructure allow for qualitative analysis of fatigue crack – microstructure interactions and provides valuable input for refinement and benchmarking of image based crystal plasticity finite element calculations.
关键词： texture,fatigue cracks,microstructural barriers,X-ray diffraction contrast tomography,residual strain,X-ray orientation imaging,annealing twins,X-ray phase contrast tomography
更新于2025-09-10 09:29:36