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Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature
摘要： In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325?°C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5?cm2?V?1?s?1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0?V, which achieved high mobility at the low annealing temperature of 325?°C.
关键词： low annealing temperature,RF magnetron sputtering,high mobility,InZnO:N/InZnSnO,thin film transistors
更新于2025-09-09 09:28:46
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Photo and thermally induced properties change in Bi/Ag/Se trilayer thin film
摘要： In this article, we have demonstrated the optical and structural properties change in Bi/Ag/Se trilayer thin films by the influence of thermal and photon energy. The trilayer films prepared by thermal evaporation technique were annealed and laser irradiated at room temperature. The X-ray diffraction study revealed the Ag2Se phase formation and the surface morphology change is being studied by Field emission scanning electron microscopy. The optical properties of the studied films were characterized by using FTIR spectrophotometer in the wavelength range 400–1200 nm. The reduction of optical band gap by both thermal and laser irradiation is being discussed on the basis of chemical disorderness, defect states and density of localized states in the mobility gap. The Raman shift due to annealing and irradiation supports the changes in the film. The large change in optical band gap in thermal annealing is useful for memory device and waveguide fabrication.
关键词： optical properties,annealing,band gap,laser irradiation,Trilayer thin films
更新于2025-09-09 09:28:46
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The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique
摘要： We prepared hydrogenated thick silicon film by plasma enhanced chemical vapor deposition (PECVD) method using SiH4 and H2 gas mixture and we investigated the effect of the hydrogen dilution ratio defined as R = H2/SiH4 on the as-deposited and annealed films. With increase in hydrogen dilution ratio, amorphous to microcrystalline transition has been observed. The crystallization has been confirmed from Raman spectroscopy, UV reflectance, low angle X-ray diffraction (XRD), spectroscopic ellipsometry and atomic force microscopy (AFM) analysis. Tauc band gap shows a decreasing trend with increasing H2 dilution of silane. It decreases from 1.8 to 1.57 eV. It has been concluded that H2 dilution of silane in PECVD enhances the crystallinity of the film and affects its optical and structural properties.
关键词： Silicon nanocrystallites,Hydrogen dilution,Thermal annealing,PECVD,Crystallization
更新于2025-09-09 09:28:46
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Recrystallization Phase in He-Implanted 6H-SiC
摘要： The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He+ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900°C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000°C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
关键词： Recrystallization,lattice defects,He-implanted 6H-SiC,annealing,TEM
更新于2025-09-09 09:28:46
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Gallium Oxide || Ohmic contacts to gallium oxide
摘要： The deposition of a metal onto a semiconductor surface to provide low contact resistance, high-reliability electrical contacts without adversely affecting the device during the metallization process is one of the most important challenges in device fabrication. Consequently, a fundamental understanding of how contacts work is essential for successful device manufacturing and commercialization. The physics of carrier transport across the metal-semiconductor junction renders metal contacts either rectifying (a.k.a. Schottky) or nonrectifying. A nonrectifying contact whose relationship between current and voltage has a low interfacial contact resistance Rc, and is preferably linear, is referred to as an Ohmic contact. Achieving low contact resistance Rc (Ω mm) or contact resistivity ρc (Ω cm2) has required a great amount of investigation for every relevant semiconductor material in the past. Typically, the successful formation of an Ohmic contact has relied on three constituent requirements: highly or degenerately doped semiconductor, choice of metallization, and thermal annealing. In the case of silicon, for instance, diffusion processes have been the topic of much early work but ultimately the control and reproducibility of ion implantation have rendered it an industry standard. For compound semiconductor heterostructure devices based on GaAs or GaN, the presence of a two-dimensional electron gas (2DEG) has necessitated a multilayer metallization deposition and annealing scheme, the details of which took many years to optimize. Particularly in the case of III-nitride high electron mobility transistors (HEMTs), Ohmic contacts were relatively easy to make on heteroepitaxal GaN due to its high dislocation density as the barrier height was reduced through defect-assisted formation of metal-nitride alloys during the anneal. Subsequent breakthroughs in GaN crystal growth, however, resulted in several orders of magnitude lower dislocation density homoepitaxial GaN, and naturally the contact resistance obtained under identical process conditions was higher [1]. Regrowth techniques to provide n+-doped GaN have become commonplace as a result.
关键词： thermal annealing,semiconductor,metallization,gallium oxide,contact resistance,Ohmic contacts
更新于2025-09-09 09:28:46
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Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
摘要： We investigated the effects of Si, Sn and cluster-C implantation into both P-well and N-well doped regions of Ge-epi on Si wafers after laser annealing. XRD analysis shows improved Ge-epi crystallinity after >1.5J/cm2 laser melt annealing (liquid phase epitaxial regrowth) compared to sub-melt annealing (solid phase epitaxial regrowth). For the P-well case the Ge-epi Rs decreased to 1,600?/□ compared to Si at 3,400?/□ suggesting a hole mobility increase of 2.1x from 150cm2/V-s to 315cm2/V-s but actual measured Hall mobility was 650cm2/V-s to a depth of 60nm, an increase of 4.3x. The 1.8J/cm2 laser melt anneal with Si implant improved mobility uniformly to 700cm2/V-s to a depth of 100nm while Sn implant improved mobility to 900cm2/V-s from the Ge-epi surface to a depth of 70nm then increases to 3000cm2/V-s at a depth of 100nm. Measuring mobility depth profiles can be very critical in engineering surface and bulk mobility improvements which can be determined by chemical compositional changes in the Ge-epilayer especially for C where no liquid phase diffusion or movement could be detected.
关键词： P-well,Ge-epi,mobility,cluster-C,N-well,Si,Sn,laser annealing
更新于2025-09-09 09:28:46
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VO <i> <sub/>n</sub></i> Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy
摘要： Oxygen-vacancy complexes formed after rapid thermal annealing in silicon wafers were investigated by FTIR spectroscopy at 6 K. It was found that VO4 is the only detectable complex. The concentration of VO4 complexes increases with increasing temperature of RTA treatment in the temperature range between 1250?C and 1400?C. The concentration at maximal temperature is equal to 4.5 × 1013 cm?3. The experimental results were compared with concentrations of VOn complexes in silicon wafers obtained using ab-initio calculations combined with rate equation modelling. The simulated concentration of VO4 corresponds well to the measured concentration. The bulk microdefect density increases with increasing VO4 concentration. The vacancies stored in VOn complexes after RTA are slowly released during further annealing and enhance oxide precipitation.
关键词： VO4 complexes,silicon wafers,Rapid thermal annealing,FTIR spectroscopy,oxygen precipitation
更新于2025-09-09 09:28:46
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Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films
摘要： This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si (100) and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of (002) crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.
关键词： ZnO,Annealing Temperature,Thin Films,Optical Properties,RF Sputtering,Structural Properties
更新于2025-09-09 09:28:46
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Selenization of (Cu, In, Ga)/Se/Mo/Glass Thin Films: A Real-Time Synchrotron X-ray Scattering Study
摘要： The precursor selenization of (Cu, In, Ga)/Se/Mo/glass thin films during annealing without additional supply of Se was studied through a real-time synchrotron X-ray scattering experiment. At a lower temperature, the crystalline CIS, Cu2In, In2Se3, and Ga2Se3 phases were formed. By increasing the temperature, some parts of the crystalline CIS phase decomposed into Cu2In and In2Se3 phases. At a higher temperature, the crystalline CIGS phase was synthesized gradually by the reaction of the crystalline Cu2In, In2Se3, and Ga2Se3 phases, and not by direct crystallization of the amorphous precursor. The behavior of the integrated intensities and the crystal domain sizes were consistent with the changes in X-ray powder diffraction profiles. The high synthesis temperature in the CIGS phase was attributed to the high activation energy barrier for diffusion of Ga ions in the crystalline Ga2Se3 phase.
关键词： Real-Time Synchrotron X-ray Scattering,Synthesis of the CIGS Phase,Selenization During Annealing,(Cu, In, Ga)/Se/Mo/Glass Thin Films
更新于2025-09-09 09:28:46
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Study of Annealing Influence on Basic Properties of Indium Tin Oxide Nanorod Films Deposited Using Glancing Angle Ion-Assisted Electron Beam Evaporation
摘要： Indium tin oxide (ITO) nanorod ?lms were deposited onto glass slides and Si wafers using ion-assisted electron beam evaporation with a glancing angle deposition technique. The annealing in?uence on the basic properties of the as-deposited ITO nanorod ?lms was studied in the range of 100–500 °C for two hours in air. The crystallinity of the ITO nanorod ?lms was enhanced with the increasing annealing temperature, and the average transmission of the as-deposited ITO nanorod ?lms in the visible range was 90%. This value did not change signi?cantly after the annealing process. The optical bandgap of the as-deposited ITO nanorod ?lms was 3.94 eV and increased slightly after annealing. The sheet resistance of the as-deposited ITO nanorod ?lms was 12.9 Ω/□ and increased to 57.8 Ω/□ at an annealing temperature of 500 °C. The as-deposited ITO nanorod ?lms showed nanorod structures with average diameters of 79 nm, which changed slightly with the annealing temperature. The root mean square roughness of the as-deposited ITO nanorod ?lms was 7.9 nm and changed slightly with annealing. The as-deposited ITO nanorod ?lms had an average contact angle of 110.9°, which decreased to 64.2° at an annealing temperature of 500 °C. The experimental results showed that varying the annealing temperature in?uenced the structural, electrical and wettability properties of the ITO nanorod ?lms while the optical properties and surface morphology were almost unaffected.
关键词： Physical Properties,Annealing Temperature,Glancing-Angle Ion-Assisted Electron-Beam Evaporation,ITO Nanorod Films
更新于2025-09-09 09:28:46