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MoS <sub/>2</sub> thin films from a (N <i> <sup>t</sup></i> Bu) <sub/>2</sub> (NMe <sub/>2</sub> ) <sub/>2</sub> Mo and 1-propanethiol atomic layer deposition process
摘要： Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to the scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. The authors have developed a new thermal atomic layer deposition process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS2-containing amorphous films. They observe a self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycling, with growth per cycle values of ≈0.1 nm/cycle. As-deposited films are smooth and contain nitrogen and carbon impurities attributed to poor ligand elimination from the Mo source. Upon high-temperature annealing, a large portion of the impurities are removed, and the authors obtain few-layer crystalline 2H-MoS2 films.
关键词： atomic layer deposition,MoS2,thin films,transition metal dichalcogenides,annealing,precursors
更新于2025-09-23 15:23:52
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Structural and optical properties of porous ZnO nanorods synthesized by a simple two-step method
摘要： The porous ZnO nanorods were successfully synthesized by a two-step template free method consisting of a modified hydrothermal approach and subsequent annealing treatment. Additive formaldehyde was adopted in the initial hydrothermal approach. Numerous mesopores with orderly distribution along the c axis apparently appeared in the annealed products. It is suggested that formaldehyde might adsorb in ZnO nanorods during the hydrothermal process and decompose under elevated temperature. The release of the generated gas prompted the formation of the pores. A schematic model was proposed to describe the forming of pores in ZnO nanorods. Further investigation demonstrated that the emission behavior and crystallographic quality may highly depend on the annealing temperature. The intensity ratio of the ultraviolet emission peak and visible emission peak as well as the crystallographic quality fluctuates due to the competition of the forming of pores and annealed temperature. The samples annealed at 450 °C possess high crystallographic quality and large surface area, which may be the suitable candidate for highly effective photocatalyst and ZnO based photoelectric devices.
关键词： Annealing,Porous nanorods,Photoluminescence,ZnO
更新于2025-09-23 15:23:52
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Effect of post-annealing on microstructure and piezoelectric properties of ZnO thin film for triangular shaped vibration energy harvester
摘要： In this paper, a triangular shaped piezoelectric vibration energy harvester (TS-PVEH) with zinc oxide (ZnO) thin films as the piezoelectric layer is reported. The effect of post-annealing temperature on the microstructure and piezoelectric performance of ZnO thin film deposited by magnetron sputtering method is investigated firstly. The results show that the optimum post-annealing temperature of 150 °C was the most beneficial to improve the piezoelectric properties of ZnO thin films. Four prototypes of TS-PVEH with different structure parameters are fabricated and optimized. The simulation and experiment results indicate that the height and width of the triangular structure have a significant influence on the vibration mode and the output performance of TS-PVEHs. The optimization results indicate that the third prototype has the best output performance. Its open-circuit voltage and short-circuit current are 290mV and 1.25 μA, respectively, when the vibration acceleration is 5m/s2 and the frequency is 56Hz. Moreover, it has the highest load power density of 0.035μW/cm2 when the load is 0.1MΩ.
关键词： Triangular substrate,ZnO thin film,Structure optimization,Post-annealing temperature,Vibration energy harvester
更新于2025-09-23 15:23:52
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X-ray Diffraction Analysis of the Angular Stability of Self-Catalyzed GaAs Nanowires for Future Applications in Solar Light Harvesting and Light Emission Devices
摘要： Semiconductor nanowires are a class of materials that recently have gained increasing interest in solar cell applications and light emitting devices. Finding reproducible processing conditions is fundamental for their future mass production. In this work, the stability of individual epitaxial GaAs nanowires (NWs) under molecular beam epitaxy (MBE) processing conditions is studied by means of a time-resolved in-situ micro X-ray diffraction (XRD) method and scanning electron microscopy. Our proposed micro XRD method is a non-destructive characterization technique where individual nano-objects of different dimensions, crystal orientations, and structures are detectable under MBE processing conditions. NWs were grown by self-catalyzed MBE onto pre-patterned Si(111) substrate. When exposed to MBE processing conditions at 610 °C without supply of source material, or with only arsenic supply, we observe evaporation from the facets with no indication of gallium droplet formation. Furthermore, the NWs, which are initially grown perpendicular to the substrate surface become angularly unstable i.e. the NWs tilt and eventually lie down on the substrate surface. Before falling down, our micro XRD data evidenced vibrations/bending of the NWs. Interestingly, when exposed to the original growth conditions which include gallium and arsenic supply, the vibrations/bending are suppressed and the tilting can be reversed. The findings in this paper can also provide insights towards engineering of self-catalyzed GaAs NW growth by removal of parasitic growth objects which inevitably grow together with NWs.
关键词： time-resolved,in-situ,mechanical stability,micro X-ray diffraction,nanowire,annealing,GaAs
更新于2025-09-23 15:23:52
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Photolithographic Patterning of Cytop with Limited Contact Angle Degradation
摘要： Cytop is a commercially available amorphous fluoropolymer with excellent characteristics including electric insulation, water and oil repellency, chemical resistance, and moisture-proof property, making it an attractive material as hydrophobic layers in electrowetting-on-dielectric (EWOD) devices. However, its highly hydrophobic surface makes it difficult for photoresists to be directly coated on the surface. To pattern Cytop, plasma treatment prior to applying photoresists is required to promote the adhesion between the photoresist and the Cytop coating. This approach inevitably causes hydrophobicity loss in the final EWOD devices. Thus, a damage-reduced recipe for Cytop patterning is urgently needed. In this paper, we first characterized the damage caused by two categories of surface treatment methods: plasma treatment and metal treatment. Parameters such as plasma gas source (Ar/O2), plasma treatment time (0–600 s), metal target (Al/Cu/Cr/Au), metal deposition process (magnetron sputtering or e-beam evaporation) were varied. Film thickness, wettability, and roughness were quantified by ellipsometry measurements, contact angle measurements, and atom force microscope (AFM), respectively. We then evaluated the effectiveness of annealing in damage reduction. Experimental results show that: (1) annealing is necessary in restoring hydrophobicity as well as smoothing surfaces; (2) specified film thickness can be obtained by controlling plasma treatment time; (3) “Ar/O2 plasma treatment + an AZ5214 soft mask + annealing” is a feasible recipe; (4) “an Al/Cu/Cr/Au hard mask + annealing” is feasible as well.
关键词： Cytop,electrowetting-on-dielectric (EWOD),annealing,patterning,microfluidics
更新于2025-09-23 15:23:52
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The effect of pre-annealing and post-annealing on the transparency of MgAl2O4, prepared by slip casting and spark plasma sintering (SPS)
摘要： The aim of this paper is to investigate the effect of slip casting process and the annealing before and after sintering to achieve a transparent MgAl2O4. To remove contaminants such as carbon from the structure of shaped spinel bodies, at first, the samples were annealed at temperature of 800 °C, 900 °C and 1000 °C for 2 h and then sintered at 1400 °C. By annealing the sample before sintering at 900 °C, the transmission increased (15% at IR region and 10% at visible region). Although by annealing the samples, the amount of carbon contamination reduced. Annealing the samples after sintering also had some desirable results. The samples annealed at temperature of 1200 °C for a time of 3, 5 and 10 h. The darkness of samples reduced due to the removal of carbon impurities and the sample was annealed at 1200 °C for 5 h had the most transparency in the visible and infrared regions.
关键词： Spark plasma sintering,Slip casting,MgAl2O4,Annealing,Transparency
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature
摘要： We measure electrical characteristics and die shear strength of directly-bonded n-4H-SiC/p+-Si junction with emphasis on their dependence on the annealing condition during bonding. In the bonding process, we perform lower-temperature annealing at the first step and higher-temperature one at the second step. By increasing annealing temperature at the first step, the impurity concentration obtained by C-V measurement gets close to the impurity concentration of SiC and the bonding strength become larger. These results show that directly-bonded SiC/Si junction characteristics depend on the annealing temperature at the first (lower-temperature) step in the bonding process.
关键词： direct bonding,surface treatment,Si,SiC,annealing
更新于2025-09-23 15:22:29
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Enhanced Photoconductivity of SIGE-Trilayer Stack by Retrenching Annealing Conditions
摘要： We studied the effect of short term furnace annealing over the photoconductive properties of tristacked layer i.e. TiO2/(SiGe/TiO2)3. The structure was prepared by depositing alternate layers of TiO2 and SiGe films, using sputtering technique. A direct-current magnetron transmission electron microscopy and grazing incidence spectroscopy was used to analyze the morphology of the structure. Photoconductive properties were studied by measuring photocurrent spectra at different applied voltages and temperatures. Tristack layers were obtained with 5-10 nm SiGe nanocrystals (NCs) by annealing at 600 °C for 5 min. No sign of SiO2 formation was found inside stacked layers. A maximum in the photocurrent spectra was observed at 994 nm at 300 K but it red-shifted gradually to 1045 nm with decrease in temperature to 100 K. This transition in peak maxima is attributed to SiGe NCs, due to lattice vibration and to contribution of non-radiative recombination at low temperatures.
关键词： TiO2,magnetron sputtering,nanocrystals,photoconductivity,SiGe,annealing
更新于2025-09-23 15:22:29
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Deformation Estimation for Time Series InSAR Using Simulated Annealing Algorithm
摘要： Time series interferometric synthetic aperture radar SAR (TSInSAR) is one of the most important surface deformation monitoring techniques, and has been widely used in geodesy. Deformation estimation is one of the main steps of TSInSAR processing, so an effective and efficient algorithm is necessary. Present algorithms have some limitations such as computing costs or errors caused by local extremums. In this work, a novel deformation estimation method based on the simulated annealing (SA) algorithm is proposed to handle this problem. The SA algorithm uses a random search to avoid local extremums and thus can be more likely to get the global optimal solution of deformation. By adopting a better annealing method, this algorithm gets high precision deformation results in less time than most present algorithms. In addition, it can estimate complex nonlinear deformation without adding any computing costs. The results, tested on the real SAR data, confirm the reliability and effectiveness of the SA-based deformation estimation algorithm.
关键词： InSAR,deformation parameter estimation,simulated annealing,TSInSAR
更新于2025-09-23 15:22:29
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Reverse annealing studies of irradiated silicon by use of current–voltage measurements
摘要： The annealing behaviour of irradiated silicon p-i-n diodes has been investigated by use of I–V measurements. The radiation-induced damage is achieved by the use of 1 MeV neutrons. The results have been analysed and a striking feature is easily noticeable where defects that do not anneal out alter their activity and behave more as generation centres. This means that they are situated in the upper half of the band gap where they act to increase the carrier density and the measured current. The increase in current starts to occur at around 100 days and a change in trap activity at around 180 days after irradiation. The device behaviour, however, remains ohmic throughout indicating that a defect level that is responsible for relaxation behaviour is stable. This study would assist in demonstrating stability of silicon radiation detectors during their operational time.
关键词： Diode,Current,Radiation,Semiconductor,Silicon,Annealing
更新于2025-09-23 15:22:29