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Dopant Activation of In Situ Phosphorusa??Doped Silicon Using Multia??Pulse Nanosecond Laser Annealing
摘要： Nanosecond laser annealing was performed on ISPD silicon in single- and multi-pulse modes. the active phosphorus concentration was increased with the laser power density and number of laser pulses and more phosphorus was activated with nanosecond lasers than with millisecond lasers. Moreover, almost all the incorporated phosphorus atoms were activated by the nanosecond laser without major strain loss when ISPD silicon melt
关键词： phosphorus-doped silicon,nanosecond laser annealing,diffusion,dopant activation,strain
更新于2025-09-23 15:19:57
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1200nma??Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
摘要： In this paper, the quantum dot intermixing (QDI) technique previously developed for 1550nm-band InAs/InAlGaAs quantum dot (QD) was applied to 1200nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI were employed such as ICP-RIE (Ar+) and ion implantation (Ar+ and B+). As a result, about 80nm PL peak wavelength shift was obtained for ICP-RIE when annealing was performed at 575 °C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm PL peak wavelength shift was obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0×1014 /cm2 and subsequent annealing. Cross sectional image analyses by Scanning Transmission Electron Microscope (STEM) and Energy-Dispersive X-ray Spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
关键词： intermixing,InAs/GaAs quantum dot,ICP-RIE,rapid thermal annealing,ion implantation
更新于2025-09-23 15:19:57
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Novel ethanol vapor annealing treatment of SnO2 quantum dots film for highly efficient planar heterojunction perovskite solar cells
摘要： As a promising electron transport layer (ETL) material, tin oxide (SnO2) has been widely used for high-quality perovskite solar cells (PSCs). To further raise power conversion efficiency (PCE) of the PSCs, it is critical to improve the performance of SnO2 film. Herein, a facile method is proposed to tailor the properties of SnO2 ETL by treating it with ethanol vapor during the annealing process. With such treatment, the conductivity and electron mobility of SnO2 film are improved. More impressively, the absorption peak in intensity of the perovskite film deposited on the ethanol vapor-treated SnO2 (E: SO) shows an increase, and the defect states are also effectively passivated. Thus, the VOC and FF of the devices based on the E: SO are greatly improved. Finally, the device achieves a champion PCE of 17.66%, which is superior to the control device of 16.62%. The results demonstrate that ethanol vapor annealing treatment is an effective method for improving the performance of photovoltaic devices based on SnO2 ETL.
关键词： annealing process,ethanol vapor treatment,tin oxide quantum dot,Perovskite solar cell
更新于2025-09-23 15:19:57
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Recovery kinetics in high temperature annealed AlN heteroepitaxial films
摘要： Based on the experimental dislocation annihilation rates, vacancy core diffusion-controlled dislocation climb was found as a dominant recovery mechanism in high temperature annealing of AlN heteroepitaxial films. Dislocation annihilation mechanisms via dislocation glide (with or without kinks) and vacancy bulk diffusion were found to be less significant. Cross-slip was also ruled out as a possible mechanism as a majority of dislocations in heteroepitaxial AlN films are threading edge dislocations. While dislocation climb through both vacancy bulk and core diffusion could offer a plausible explanation of the recovery process, the activation energy for the vacancy core diffusion-controlled dislocation climb was relatively low (4.3 ± 0.1 eV), as estimated from an Arrhenius plot. The validity of the vacancy core diffusion mechanism was also supported by a large vacancy mean free path (～240 nm), which was comparable to the sample thickness and thus the average dislocation length. Finally, the experimentally observed dislocation density reduction as a function of the annealing temperature and time was in good agreement with the vacancy core diffusion mechanism.
关键词： dislocation annihilation,high temperature annealing,AlN heteroepitaxial films,recovery kinetics,vacancy core diffusion
更新于2025-09-23 15:19:57
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Impact of Bi doping on CdTe thin films: Thermal annealing evolution of physical properties for solar cell absorber layer applications
摘要： To mitigate probability of instability and device degradation associated with traditional Cu doping and to tune required band gap as well as to reduce open circuit voltage loss to solar cell device, a study on evolution to the physical properties of Bi-doped CdTe films is reported. Thin films of CdTe:Bi 2% alloy are developed employing electron-beam deposition followed by air annealing. Structural studies reveal that films have preferred crystal growth along (111) plane and with annealing, films turned out to be polycrystalline. Absorbance of films is found to be affected with annealing where 450 °C annealed films show maximum absorbance. The current-voltage measurements show linear relationship reveal to ohmic contacts between the films and transparent conducting oxide substrate and conductivity is observed to be varied with annealing. The atomic force microscopy study indicates an increase in surface roughness with annealing (except for 300 °C). Our findings warrant that the optimized physical properties of CdTe:Bi 2% films annealed at 450 °C may play important role to enhance the solar cell device performance concerned.
关键词： Bismuth doping,Absorber layer,Air-annealing,Thin films,Cadmium telluride,Electron beam evaporation
更新于2025-09-23 15:19:57
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Toward reliable high performing organic solar cells: Molecules, processing, and monitoring
摘要： A steady surge in device efficiencies of organic solar cells (OSCs) along with improvement in associated features, such as stability and facile processing methods, is expected to provide a realistic, feasible commercial option. The introduction of high performing donor and acceptor molecules along with tailored buffer layers has provided the impetus for the resurgence of this field. Further options of ternary and tandem architectures of these OSC systems should push this technology to competitive levels. A major hurdle, which is expected when these devices are evaluated for long-term performance in all weather conditions, is the level of degradation. We examine and address these stability-limiting factors in this perspective article. Modifications in microstructure/morphology and interfaces with time and energy levels defining the molecules form some of the critical intrinsic degradation pathways. Various strategies that have been used to limit the associated pathways of degradation of the active layer will be discussed. One such strategy is electric field-assisted thermal annealing treatment, which concomitantly also brings in a favorable vertical phase segregated active layer morphology. We also emphasize the utility of photocurrent noise measurements to monitor the level of degradation and possibly forecast the trajectory of long-term performance of OSCs.
关键词： processing methods,photocurrent noise measurements,electric field-assisted thermal annealing,device efficiencies,degradation,donor and acceptor molecules,organic solar cells,stability,ternary and tandem architectures
更新于2025-09-23 15:19:57
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A Nontoxic Bifunctional (Anti)Solvent as Digestivea??Ripening Agent for Higha??Performance Perovskite Solar Cells
摘要： The preparation of high-quality perovskite films is important for achieving high-performance perovskite solar cells (PSCs). The effective balance between solvent and antisolvent is an essential factor for regulating high-quality perovskite film during the spin-coating and thermal-annealing steps. In this work, a greener, nonhalogenated, nontoxic bifunctional (anti)solvent, methyl benzoate (MB), is developed not only as an antisolvent to rapidly generate crystal seeds at the perovskite spin-coating step, but also as a digestive-ripening solvent for the perovskite precursors, which can prevent the loss of organic components during the thermal-annealing stage and effectively suppress the formation of miscellaneous lead halide phases. As a result, this novel bifunctional (anti)solvent is employed in planar n–i–p PSCs for engineering high-quality perovskite layers and thus achieving a power conversion efficiency up to 22.37% with negligible hysteresis and >1300 h stability. Moreover, due to the high boiling point and low-volatility characteristic of MB, high-performance PSCs are achieved reproducibly at different operating temperatures (22–34 °C). Therefore, this developed bifunctional solvent system can provide a promising platform toward globally upscaling and commercializing PSCs in all seasons and regions.
关键词： digestive ripening,antisolvents,methyl benzoate,perovskites,thermal annealing,solvents
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Ultra-thin LPCVD SiN <sub/>x</sub> /n+poly-Si passivated contacts a?? A possibility?
摘要： This work explores the possibility of using ultrathin silicon nitride (SiNx) films with high positive fixed charge in a SiNx/poly-Si passivating contact. The factors including (i) film thickness, (ii) annealing condition (time, temp and ambient) and (iii) surface pre-treatment were optimized to boost the passivation performance of ultrathin LPCVD SiNx films. Our preliminary experiments reveal excellent surface passivation and low recombination current density, Jo (45 fA.cm-2) by ~1.5 nm thick LPCVD SiNx films when subjected to an air ambient anneal at 800?C for 30 mins. This is due to the formation of high positive fixed charge density (1.5 ?10 12 cm-2). Air ambient annealed (465 μs) samples also have a higher lifetime when compared to the forming gas annealed (208 μs) samples. These passivating SiNx films were further integrated into SiNx/n+poly-Si contacts and characterized for Jo,contact and tunneling resistance, ?contact. The best SiNx/n+poly-Si passivated contact in this study has Jo, contact = 5.9 fA.cm-2, ?contact = 0.525 Ω.cm2 and an efficiency potential > 22.75%. According to our knowledge, it is the first report confirming the formation of passivated contacts with SiNx as the dielectric tunnel layer.
关键词： poly-Si,TEM,LPCVD SiNx,annealing,lifetime studies,passivated contact,silicon nitride,tunnel layer
更新于2025-09-23 15:19:57
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Pulsed laser annealing of spray casted Cu(In,Ga)Se2 nanocrystal thin films for solar cell application
摘要： We report ambient processing of 2.5 μm thick layers of Cu(In,Ga)Se2 (CIGS) nanocrystals thin films sprayed on CdS/i:ZnO/Al:ZnO/Soda lime glass substrates with pulsed laser annealing (PLA), using 1064 nm laser at 220 ns pulse width for solar cell fabrication. The choice of the nanosecond pulse width of the near-infrared laser source is critical for the effectiveness of the laser sintering of the CIGS layer irrespective of substrate thermal stability. Solid state sintering by PLA post treatment is evidenced via morphological and structural analysis. The analysis confirms the improvement in the quality of CIGS absorber with respect to its grain size from 5 nm to 20 nm after PLA, which is expected to reduce deep level defects. The short circuit current density of photovoltaic devices prepared using ambient processed laser annealed absorber layer increased significantly from 0.75 mA cm?2 to 8 mA cm?2, resulting in reasonable power conversion efficiency exceeding 1%. The promising results realized by PLA treatment, presented in this work, have great potential to be integrated into scalable roll-to-roll manufacturing of CIGS solar cells.
关键词： Non-vacuum,Cu(In,Ga)Se2,Solar cells,Annealing,Nanosecond,Laser
更新于2025-09-23 15:19:57
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Study on laser annealing of niobium films deposited on copper for RF superconducting cavities
摘要： Niobium sputtered copper cavities were proposed as a kind of promising next generation superconducting cavities, but were still challenged by the Q-slope effect under high acceleration gradients. Current solutions focus on improving the film quality to make it more bulk-like, for which a higher substrate temperature is required. However, due to the limitation of the melting point of the copper substrate, both the deposition process and the post-annealing process cannot be performed at a high temperature. The laser annealing mentioned in this paper uses nanosecond pulsed laser as the heat source, and the local temperature field generated within the thickness scale of the niobium film can anneal the film without affecting copper substrate. Laser annealing system has been set up in Peking University, and experiments with niobium thin film on copper (Nb/Cu) samples have been carried out. Superconducting performance, surface topography and other properties of Nb/Cu samples before and after annealing are compared. Recrystallization of niobium films happened and various factors that may cause Q-slope have been suppressed according to the results. All these indicate the effectiveness of laser annealing and the possibility of being used in niobium sputtered copper cavities in the future.
关键词： Surface topography,Surface roughness,Recrystallization,Niobium thin film,Superconducting cavity,Laser annealing
更新于2025-09-23 15:19:57