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[IEEE 2018 International Conference on Advances in Computing, Communications and Informatics (ICACCI) - Bangalore, India (2018.9.19-2018.9.22)] 2018 International Conference on Advances in Computing, Communications and Informatics (ICACCI) - Novel Architectures to Enhance QoS in Long-Reach Passive Optical Networks
摘要： Future access networks need to withstand high traffic demand of users as well as to ensure certain degree of reliability to data transmission against network failures. Long-reach passive optical networks (LR-PONs) are being envisioned as one of the best emerging future networks due to their capability to offer very high data rate at low cost. In a LR-PON, an optical line terminal (OLT) in central office is used as a master node to control upstream and downstream traffic from/to the users. The OLT allocates bandwidth to users for their upstream traffic transmission through executing a dynamic bandwidth allocation scheme. However, traffic congestion occurs when users need more than the allocated bandwidth due to their high traffic load in some time periods of a day. The high traffic congestion severely increases traffic delay, thereby degrading quality of service (QoS) performance in the network. Since, LR-PONs carry high traffic, backup OLTs may need to be used to facilitate service recovery in case of failure of any working OLT. A backup OLT remains idle until a failure occurs. In this paper, we explore two novel architectures wherein we utilise the idle backup OLTs to serve the users requesting for high bandwidth and providing protection to users to ensure certain degree of reliability to traffic in case of any failure. Our simulation results show that the proposed architectures minimize the traffic delay in congestion hours by efficiently utilising the backup OLTs; they also enhance reliability to traffic transmission by providing protection against failures, thereby significantly improving QoS performance in the network.
关键词： QoS,reliability,traffic congestion,LR-PON
更新于2025-09-04 15:30:14
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Reliability of High-Power Mechatronic Systems 1 || Simulation of Degradation Phenomena in Semiconductor Components in order to Ensure the Reliability of Integrated Circuits
摘要： The design cycle until now only guaranteed the electrical performance of integrated circuits (ICs) before aging. Performances throughout product lifetimes are, in general, assured by taking design margins and accelerated aging tests that come in a second complementary phase to guarantee the circuit reliability. In case of degradation, a reactive design correction will necessarily mean a delay in placing the product on the market. The design cycle subject to delay has not yet passed control. This study proposes guaranteeing the level of reliability of an integrated circuit during the design phase. This new design methodology requires a simulation tool for the aging of components. In this phase of the study, reliability tests on manufactured circuits will consolidate the results of reliability simulation up to the point of refining these individualized models by component. Once the components of a technology are properly modeled, the number of reliability incidents must tend towards 0. Marketing is advanced and the design cycle is gaining control. This makes it possible to hope that this technology will be available on the market as soon as the first silicon is available, without having to wait for any accelerated qualification tests. The circuits are guaranteed to be conceptually reliable.
关键词： simulation,design methodology,reliability,integrated circuits,aging
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs
摘要： The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on non-isothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.
关键词： JBSFET,Robustness,MOSFET,Reliability,Silicon Carbide,4H-SiC,Failure Mechanism,Short Circuit,Ruggedness
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Ageing Mitigation Control Method for Power Devices in Multilevel Inverters in Standalone PV Systems
摘要： Multilevel inverters (MIs) have become widely used in photovoltaic (PV) systems for their high efficiency, reduced leakage currents, and reduced EMI levels. Although MIs suffer from unequal thermal stresses in power devices that lead to aging of power device with their continuous operation. Therefore, this paper proposes a new aging mitigation control (AMC) method to enhance the reliability of MIs against the aging effects in power devices. The operation of the proposed AMC method has three operating modes that are adapted according to the level and type of aging. In small and medium aging levels, the proposed method preserves the full output power ratings of the inverter with maximum energy extraction from PV modules. Whereas, in high aging level region and multiple devices failures, the proposed method reduces the output power so as to maintain continuous operation of the inverter without harmful consequences. The simulation and experimental results with comparisons to conventional methods show effective performance of the proposed AMC method.
关键词： lifetime,multilevel inverters (MIs),pulse width modulation (PWM),reliability,photovoltaic (PV),aging
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Power Cycling of Commercial SiC MOSFETs
摘要： The robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from three different manufacturers is investigated, with silicon IGBTs serving as reference. The power cycling method, especially the junction temperature measurement and best practices to ensure its accuracy, is described. The results give insight into reliability and variability as well as aging behavior and failure modes. We ?nd a large variability between samples, both in initial characteristics and measured cycling lifetime, as well as signs of semiconductor device degradation. There is a signi?cant spread in the extent of the variability, in the average and minimum observed lifetime, as well as in the failure mode. Some samples fail quickly due to bond wire defects, some due to semiconductor degradation, while others show very long lifetimes.
关键词： power cycling,SiC MOSFETs,variability,reliability,aging behavior,failure modes
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - High Voltage GaN Switch Reliability FIT rates and PPM reliability based on standards from: Joint Electron Device Engineering Council (JEDEC), Automotive Electronics Council (AEC) and German Electrical and Electronic Manufacturers' Association (ZVEI)
摘要： Adoption of any semiconductor technology by the power conversion market requires the understanding of fundamental failure modes, acceleration factors and reliability statistics. This study shows how GaN products from Transphorm can meet this challenge, especially in the critical High Voltage Off State (HVOS) reliability stress test. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This market requirement can be addressed by testing to failure statistically significant samples of devices, and analyzing the data with appropriate models. The methods developed for measuring GaN reliability on large samples will be discussed, which are wholly based on existing industrial and automotive standards. The resulting data can be used to supplement qualification testing results when the failure modes and acceleration factors are well understood.
关键词： GaN,FIT,PPM,HEMT,acceleration factor,power electronics,reliability
更新于2025-09-04 15:30:14
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Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering
摘要： Few-layer Black phosphorus (BP) has recently emerged as a promising two-dimensional (2D) material for electronic and optoelectronic devices due to its high mobility and tunable bandgap. However, BP is known to have quick degradation and oxidize in ambient conditions by breaking of the P-P bonds. As a result, there is a growing need to encapsulate BP that avoids oxygen and water while retaining the high electric performance of the devices. Here we demonstrate a hydrophobic polymer encapsulation technique with improved thermal conductivity for high current density, which preserves the electrical properties of BP back-gate transistors compared to the commonly used Al2O3 encapsulation with improved mobility and minimal traps. The on-off ratio increases for more than an order of magnitude at room temperature and more than four orders of magnitude at cryogenic temperatures. High field transport shows the first systematic study on unprecedented breakdown characteristics up to -5.5 V for the 0.16 μm transistors with a high current of 1.2 mA/μm at 20 K. These discoveries open up a new way to achieve high-performance 2D semiconductors with significantly improved breakdown voltage, on-off ratios, and stability under ambient conditions for practical applications in electronic and optoelectronic devices.
关键词： encapsulation,polymer,Black phosphorus,high-field transport,field-effect transistors,breakdown voltage,reliability
更新于2025-09-04 15:30:14