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Superior ferroelectric photovoltaic properties in Fe -modified (Pb,La) (Zr,Ti)O3 thin film by improving the remnant polarization and reducing the band gap
摘要： In order to develop ferroelectric photovoltaic devices with high power conversion e?ciency, ferroelectric materials must have simultaneously large remnant polarization and narrow band gap so as to e?ciently separate photo-generated carriers and absorb more sunlight. Based on this idea, in this report, we introduce Fe3+ into Pb0·93La0·07(Zr0·6Ti0.4)0.9825O3 ferroelectric thin ?lm to increase the remnant polarization and decrease the band gap of the thin ?lm. In doing so, we prepare Fe3+ doping Pb0·93La0·07(Zr0·6Ti0.4)0.9825O3 thin-?lm based photovoltaic devices. The experimental results indicate that with increasing the Fe3+ amount, the remnant polarization of the ?lm ?rst improves to the maximum value of 50 μC/cm2 at the 4.8 mol% Fe3+ content and then reduces gradually, while the band gap continuously decreases. In addition, at a negative poling voltage, the device exhibits larger short-circuit current and open-circuit voltage in comparison with those obtained at the positive poling voltage, which is attributed to the depolarization electric ?eld originating from the remnant polarization of ferroelectric thin ?lms in the same direction as the built-in electric ?eld caused by the Schottky barrier. In this report, the most superior photovoltaic performances with the open-circuit voltage of as large as ?0.55 V and short-circuit current of as high as 0.4 μA/cm2 are obtained in the device with 4.8 mol% Fe3+ amount and at ?5 V poling voltage. This is on account of the improved sunlight absorbing properties and photo-generated carriers separation ability of the device. This work provides a novel idea for designing and preparing ferroelectric photovoltaic devices with high power conversion e?ciency.
关键词： Fe3+ doping,Photovoltaic properties,Band gap,Remnant polarization,Ferroelectric thin ?lm
更新于2025-09-23 15:21:01
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Ferroelectric properties of Ag doped PbZr0.53Ti0.47O3 thin film deposited by sol–gel process
摘要： To suppress the generation of oxygen vacancy during the PbZr0.53Ti0.47O3 (PZT) film synthesis process, herein, the 0–3 type Ag/PZT film is chosen as a prototype to systematically investigate the mechanisms of oxygen vacancy decrease and the relationship of ferroelectric properties. The uniform and dense films were successfully fabricated on fluorine tin oxide glasses (FTO) by facile sol–gel processes. It is confirmed the existence of silver nanoparticles in the film, indicating the composite ferroelectric films are of 0–3 type. When Ag doping mole concentration is 0.010 in the sol, a large remnant polarization (Pr) of ~ 50.7 μΧ/cm2 is got, which is 37.9 μΧ/cm2 for pure PZT. UV–vis spectrum confirms the generation of Ag2O in the process of mixing the sol. Furthermore, the oxygen vacancies caused by natural evaporation of lead specie are effectively reduced because of the decomposition of Ag2O, confirmed by X-ray photoelectron spectroscopy. This work points out the generated Ag2O as the intermediate product is the key to achieve high remnant polarization in Ag/PZT based film and make it as a promising candidate for memory applications.
关键词： remnant polarization,oxygen vacancy,Ag doped PbZr0.53Ti0.47O3,sol–gel process,Ferroelectric properties
更新于2025-09-04 15:30:14