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An Electrically Modulated Singlea??Color/Duala??Color Imaging Photodetector
摘要： An electrically modulated single-/dual-color imaging photodetector with fast response speed is developed based on a small molecule (COi8DFIC)/perovskite (CH3NH3PbBr3) hybrid film. Owing to the type-I heterojunction, the device can facilely transform dual-color images to single-color images by applying a small bias voltage. The photodetector exhibits two distinct cut-off wavelengths at ≈544 nm (visible region) and ≈920 nm (near-infrared region), respectively, without any power supply. Its two peak responsivities are 0.16 A W?1 at ≈525 nm and 0.041 A W?1 at ≈860 nm with a fast response speed (≈102 ns). Under 0.6 V bias, the photodetector can operate in a single-color mode with a peak responsivity of 0.09 A W?1 at ≈475 nm, showing a fast response speed (≈102 ns). A physical model based on band energy theory is developed to illustrate the origin of the tunable single-/dual-color photodetection. This work will stimulate new approaches for developing solution-processed multifunctional photodetectors for imaging photodetection in complex circumstances.
关键词： organic/perovskite photodetectors,response speed,dual-color imaging
更新于2025-09-23 15:21:01
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SbSI microrod based flexible photodetectors
摘要： In this paper, SbSI microrods is prepared by using a simple hydrothermal method via sulfur powder as sulfur source. The as-synthesized SbSI microrods with sulfur as sulfur powder source has better flexibility than that of SbSI with thiourea as sulfur source due to decreasing force constant between Sb and S atom. SbSI microrod based flexible photodetectors exhibit higher specific detectivity of up to 5.43×1010 Jones, fast response speed (rise time and fall time of 61 ms and 128 ms, respectively) and also show low dark current less than 50 pA. Especially, the photoresponse performance of the SbSI microrod based flexible photodetectors are almost unchanged after different bending curvatures and bending times more than 2000 times.
关键词： higher specific detectivity,fast response speed,SbSI microrods,flexible photodetector
更新于2025-09-23 15:19:57
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High-speed heterojunction photodiodes made of single- or multiple-layer MoS2 directly-grown on Si quantum dots
摘要： Recently, chemical vapor deposition-grown molybdenum disulfide (MoS2) has been actively employed for MoS2/Si-wafer heterojunction (HJT) photodetectors due to the attractive optoelectronic properties. However, the MoS2/Si HJT is not so advantageous in that it exhibits low photoresponse due to the low light absorption despite the simple device structure. In addition, there is a limitation in achieving high-quality MoS2 films due to the defects at the MoS2/Si interface developed during the transfer of the MoS2 films to the target substrate, resulting from the restriction of the direct growth on the Si wafer. Here, we first report successful direct growth of single- and multi-layer MoS2 films on Si quantum dots (SQDs) multilayers (MLs) embedded SiO2 (SQDs:SiO2 MLs) substrates. The multilayer MoS2/SQDs HTJ photodiodes show response speed of rise time: ~60 ns/fall time: ~756 ns, highest than ever achieved, and detectivity of 6.1 x 10^13 cm Hz^1/2 W^-1. This excellent performance can be attributed to well formation of the HJT at the MoS2/SQDs:SiO2 interface by the direct growth, resulting in the reduction of the defects, thereby facilitating the carrier transport, and high light absorptivity of the SQDs:SiO2 MLs.
关键词： MoS2,Heterojunction,Photodiode,Si quantum dot,Response speed,Direct growth
更新于2025-09-11 14:15:04