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High responsivity and fast UV-Vis-SWIR photodetector based on Cd3As2/MoS2 heterojunction
摘要： High responsivity, fast response time, ultra-wide detection spectrum are pursuing goals for state-of-art photodetectors. Cd3As2, as a three-dimensional (3D) Dirac semimetal, has zero-bandgap, high light absorption rate in broad spectral region, and higher mobility than graphene at room temperature. However, photoconductive detectors based Cd3As2 suffer low quantum efficiency due to the absence of high built-in field. Here, Cd3As2 nanoplate/multilayer MoS2 heterojunction photodetector was fabricated and achieved a quite high responsivity of 2.7×103 A/W at room temperature. The photodetector exhibits a short response time of in broad spectra region from ultraviolet (365 nm) to short-wavelength-infrared (1550 nm) and reached 65 μs at 650 nm. This work provides a great potential solution for high-performance photodetector and broadband imaging by combining 3D Dirac semi-metal materials with semiconductor materials.
关键词： 3D Dirac semimetals,broadband,photodetectors,responsivity,heterojunction
更新于2025-09-11 14:15:04
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - High Performance Graphene Ballistic Rectifiers for THz detection
摘要： Although graphene can operate in the ballistic transport regime at room temperature, there are very few devices harnessing this property. Here we present a novel device called the ballistic rectifier which circumvents the problem of opening a bandgap in graphene. Based on the device theory, we propose four different asymmetric planar structures. All devices are working and show responsivity higher than 1,000 V/W at room temperature, with noise-equivalent power as low as 4.16 pW/Hz1/2. These properties make GBRs a suitable candidate for THz detection.
关键词： THz detection,noise-equivalent power,ballistic rectifier,responsivity,graphene
更新于2025-09-11 14:15:04
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Organic single-crystal phototransistor with unique wavelength-detection characteristics; 具有独特波长检测特性的有机单晶光电晶体管;
摘要： Organic phototransistors based on high-quality 2,8-dichloro-5,11-dihexyl-indolo[3,2-b]carbazo (CHICZ) single show the highest photoresponsivity of 3×103 A W?1, photosensitivity of 2×104 and the detectivity can achieve 8.4×1014 Jones. We also discovered good linear dependence of log(photosensitivity) versus the wavelength when the devices were illuminated with a series of same-intensity but different-wavelength lights. The organic phototransistors based on CHICZ single crystal have potential applications in wavelength-detection.
关键词： photo-responsivity,photosensitivity,wavelength-detection,organic phototransistor,single crystal
更新于2025-09-10 09:29:36
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Non-Fullerene Based Printed Organic Photodiodes with High Responsivity and MHz Detection Speed
摘要： Digitally printed organic photodiodes (OPDs) are of great interest for the cost-efficient additive manufacturing of single and multi-device detection systems with full freedom of design. Recently reported high-performance non-fullerene acceptors (NFAs) can address the crucial demands of future applications in terms of high operational speed, tunable spectral response as well as device stability. Here, we present the first demonstration of inkjet and aerosol-jet printed OPDs based on the high-performance NFA, IDTBR, in combination with poly(3-hexylthiophene) (P3HT) exhibiting a spectral response up to the NIR. These digitally printed devices reach record responsivities up to 300 mA/W in the visible and NIR spectrum competing with current commercially available technologies based on Si. Furthermore, their fast dynamic response with cut-off frequencies surpassing 2 MHz outperforms most of the state-of the-art organic photodiodes. The successful process translation from spincoating to printing is highlighted by the marginal loss in performance compared to the reference devices, which reach responsivities of 400mA/W and detection speeds of more than 4 MHz. The achieved high device performance and the industrial relevance of the developed fabrication process provide NFAs with an enormous potential for the development of printed photodetection systems.
关键词： aerosol-jet printing,spectral responsivity,non-fullerene acceptor,inkjet printing,digital printing,organic photodiode
更新于2025-09-10 09:29:36
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Nanoscale groove textured β-Ga <sub/>2</sub> O <sub/>3</sub> by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity
摘要： β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga2O3 optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga2O3 metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ～10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. The realization of MacEtch’s applicability to β-Ga2O3 opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage.
关键词： responsivity,β-Ga2O3,nanoscale groove textured,photodiodes,metal-assisted chemical etching
更新于2025-09-10 09:29:36
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Noise Analysis of Group IV Material-Based Heterojunction Phototransistor for Fiber-Optic Telecommunication Networks
摘要： This paper presents an analytical study of noise behavior and spectral responsivity of Ge1?xSnx alloy-based heterojunction phototransistors (HPTs) for different Sn compositions and base doping concentrations. The structure consists of n-Ge/p-Ge1?xSnx layers pseudomorphically grown on Si substrate via Ge virtual substrate, compatible with complementary metal-oxide-semiconductor technology. The high absorption coefficient of the alloy in base significantly improves signal-to-noise ratio in the high-frequency region, leading to efficient photodetection in the C- and L-bands of fiber-optic telecommunication window. A comparison is made between the theoretical findings for GeSn HPTs and the available data for currently employed group III–V compound-based HPTs, to examine if GeSn-based HPT can be a good alternative.
关键词： GeSn alloys,absorption coefficient,spectral responsivity,heterojunction phototransistor,signal-to-noise ratio
更新于2025-09-09 09:28:46
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Terahertz (THz) Direct Detectors based on Superconducting HEBs with Thermal, Microwave and THz Biasing
摘要： Terahertz (THz) direct detectors based on superconducting niobium nitride (NbN) hot electron bolometers (HEBs) with thermal, microwave (MW) and THz biasing have been studied at 0.65 THz and 4.2 K in detail. The current responsivity and noise equivalent power (NEP) have been measured and compared respectively. The detectors with the MW and THz biasing have about one order higher current responsivity than that of the thermal one. With the MW biasing, an NEP at the order of pW/√Hz is obtained by choosing the MW frequency and power appropriately.
关键词： Terahertz,direct detectors,microwave biasing,niobium nitride,current responsivity,hot electron bolometers,superconducting,THz biasing,thermal biasing,noise equivalent power
更新于2025-09-09 09:28:46
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Study of the system responsivity to measure the blackbody's temperature by optical pyrometry from 1200?K to 1570?K
摘要： This work presents a method that has been recently adopted in our laboratory to determine the temperatures of blackbody sources in the range of 1200–1570 K. The system uses a Double Monochromator System (DMS) based on a grating and a prism as dispersion elements. The detection element was a silicon photodiode (Si-MMA), over which the spectral range from 800 nm to 900 nm has been used. Between the blackbody source and the DMS was placed an optical system consists of two convergent lenses. The system responsivity “G ” was determined by the transmission factor of the optical system and the transmission factor of the DMS and the photodiode responsivity. The obtained results showed that the relative uncertainty of the system responsivity “G ” varied from 0.3% to 1.12%. This in turn resulted in a corresponding uncertainty in temperature of about 2.2 K and 4.5 K (k = 1) over the evaluated temperature range. Although this uncertainty level was signi?cantly high compared to those obtained by many other national metrology institutes, it was considered as a step forward in our laboratory to measure high temperatures.
关键词： temperature,detector,pyrometry,optical transmission,system responsivity
更新于2025-09-04 15:30:14
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Optoelectronic and photocatalytic properties of zinc sulfide nanowires synthesized by vapor-liquid-solid process
摘要： Zinc sul?de (ZnS) is a wide band-gap semiconductor with excellent optoelectronic properties suitable for photo-sensing devices and photocatalysts. Herein, the ZnS nanowires (ZnS NWs) have been successfully synthesized using thermal evaporation based on vapor-liquid-solid (VLS) method. From the examinations of photosensing device under ultraviolet B (UVB) irradiation, the photocurrent gain (Pg), responsivity (Rλ), response time and recovery time are 0.572, 2.761 mW/cm2, 3.2 s and 3.6 s, respectively. As to photocatalytic activity for methylene blue (MB), the apparent rate coe?cient (K) of ZnS NWs is 9.78 × 10?3 (min?1). Although ZnS NWs-based photodetector cannot be workable under ultraviolet A (UVA) irradiation, with referring to recent medical literatures, UVB radiation is the major environmental risk factor for developing human skin cancer, the most common cancer worldwide. Thus, the most important contribution in this work is that the ZnS NWs-based UVB radiation-oriented photodetector has been successfully demonstrated via a simple process.
关键词： Photodetector,Zinc sul?de nanowires (ZnS NWs),Photocurrent gain (Pg),Optoelectronic,Vapor-liquid-solid (VLS),Apparent rate coe?cient (K),Responsivity (Rλ),Ultraviolet B (UVB) irradiation
更新于2025-09-04 15:30:14