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[IEEE 2019 IEEE International Circuits and Systems Symposium (ICSyS) - Kuantan, Pahang, Malaysia (2019.9.18-2019.9.19)] 2019 IEEE International Circuits and Systems Symposium (ICSyS) - Analysis of Charge Distribution for Si Photonic Rib-type Waveguide
摘要： This paper provides the simulation of behaviour of the charge distribution for rib-waveguide in which fabrication is done by using silicon-on-insulator (SOI). An SOI substrate is used in this paper due to its high refractive index contrast in which enables a tight confinement of light in the channel or waveguide. In this paper, we determined and analysed the charge distribution for P-I-N rib waveguide by using free carrier-injection effect via change in electrical voltage. In carrier injection, the PIN waveguide is connected to the voltage supply forward-biased in which the p-doped (hole) region is on the positive terminal and n-doped (electron) region is on the negative terminal. For the examination of electron distribution as a function of applied bias, the drain bias voltage is varied from 0 V to 1.2 V in the interval of 0.2 V. Through our drain bias analysis, it is deduced that the n-doped region will get attracted to the p-doped region until PIN region is completely n-doped region. Therefore, there will be changes in refractive index in the core waveguide due to the diffusion of free charges. This changes in refractive index will eventually make our device tuneable.
关键词： Charge distribution,P-I-N core and rib-waveguide and Carrier Injection
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Daejeon, Korea (South) (2019.7.28-2019.8.1)] 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Low-Loss and Broadband Silicon Photonic Y- Junction Using Tapered Rib Waveguides
摘要： We report on low loss and broad bandwidth X-junctions based on adiabatically tapered rib waveguide silicon photonic devices. The fabricated devices exhibit a compact footprint of 20 μm (taper length), a broad bandwidth over 24 nm, and a low excess loss of 0.28 dB. The demonstrated device has a compact footprint of 20 μm (taper length), a broad bandwidth over 24 nm, and a low excess loss of 0.28 dB.
关键词： Advanced passive devices,adiabatic tapered rib waveguide,3 dB Optical power splitter,Photonic integrated circuits
更新于2025-09-16 10:30:52
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Design and Analysis of a Dispersion-engineered and Highly Nonlinear Rib Waveguide for Generation of Broadband Supercontinuum Spectra
摘要： In this paper, a waveguide consisting of a core of As2Se3 chalcogenide glass and the upper and lower claddings of MgF2 with two zero-dispersion wavelengths (ZDW) has been proposed. By optimization of the dimensions of the core and the claddings, their effects on the dispersion curve have been investigated and a suitable structure with a flat dispersion curve, an effective mode area of 1.6 μm2 in a pump wavelength of 2.8 μm, and hence, a nonlinear coefficient greater than 34 w?1 m?1 has been obtained. A broadband supercontinuum in a wavelength range of 1.5 μm to 15 μm has been generated by applying an input pulse with duration of 100 fs and a maximum power of 2 kw to this waveguide. Due to the large width of the supercontinuum generated (SCG), the short length of the waveguide (maximum 5 mm), and a low input power, this structure is suitable for use in optical integrated circuits and its various applications.
关键词： zero dispersion wavelength,supercontinuum generation,high nonlinearity,chalcogenide glass,low loss,rib waveguide
更新于2025-09-12 10:27:22
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[IEEE 2017 IEEE Workshop on Recent Advances in Photonics (WRAP) - Hyderabad (2017.12.18-2017.12.19)] 2017 IEEE Workshop on Recent Advances in Photonics (WRAP) - Effect of Junction Profile on the Phase and Loss Characteristics of a Silicon Optical Modulator
摘要： In this paper, numerical analysis has been done to calculate the modal, phase and loss characteristics of a silicon rib PN phase shifter for three samples with different junction pro?les. Each sample has been compared based on performance characteristics to show that a graded junction gives better performance compared to an abrupt junction phase shifter.
关键词： phase shifter,rib waveguide,silicon modulator,insertion loss,PN junction,Graded junction
更新于2025-09-10 09:29:36