- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Thermal Influence on S22 kink behavior of a 0.15-μm gate length AlGaN/GaN/SiC HEMT for microwave applications
摘要： Thermal influence on S22 kink behavior has been carried out on a 0.15-μm gate length AlGaN/GaN/SiC high electron mobility transistor over a wide range of temperature. The size and the shape of the S22 kink effect in terms of biasing and temperature have been evaluated. The main finding is that S22 of the studied device is affected by two kinks: the first one appears at approximately 19 GHz and then the second one appears at about 43 GHz. The impact of the intrinsic circuit parameters on the S22 kink phenomena is inspected to assess their contribution. In addition, a new procedure is proposed to quantify this type of phenomenon by defining the kink area as the area between the two curves corresponding to S22 with and without the kink effect. The relevance of this study emerges from the fact that an exhaustive characterization of these anomalous phenomena can empower RF engineers to effectively take them into account for both modeling and design purposes.
关键词： scattering parameter measurements,and temperature,0.15-μm gate length GaN on SiC HEMT,equivalent circuit,two S22 kinks
更新于2025-09-23 15:23:52
-
High-Periphery GaN HEMT Modeling up to 65 GHz and 200°C
摘要： In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the potentialities of this kind of active solid-state electronic device at its best, the experiments are performed at extreme operating conditions. As a case study, we consider a large 0.25-μm GaN HEMT with a gate periphery of 1.5 mm, providing a high dissipated power of 5.1 W. The tested semiconductor device is characterized by measuring scattering parameters at high frequencies up to 65 GHz and at high ambient temperature up to 200°C. To assess the impact of the thermal effects on high-frequency GaN HEMT performance, an equivalent circuit is analytically extracted and then used to determine the main RF figures of merit. The achieved experimental results show evidence that the increase of the temperature causes a significant degradation in device performance.
关键词： scattering parameter measurements,high-power,GaN HEMT,high-temperature,Active solid-state electronic device,millimeter-wave frequency
更新于2025-09-10 09:29:36