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P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs
摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.
关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width
更新于2025-09-23 15:23:52
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Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
摘要： In this paper, the main content revolves round the on-state characteristics of the variation of a lateral width (VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific on-resistance of the VLW LDMOS device, the simulation results are in good agreement with the analytical calculation results combined with device dimensions. This provides a theoretical basis for the design of devices in the future. Then the self-heating effect of the VLW structure with a silicon-on-oxide (SOI) substrate is compared with that of a silicon carbide (SiC) substrate by 3D thermoelectric simulation. The electrical characteristic and temperature distribution indicate that taking into account the SiC as the substrate can mitigate the self- heating penalty effectively, alleviating the self heating effect and improving reliability.
关键词： self-heating effect,specific on-resistance,SOI,LDMOS transistor
更新于2025-09-23 15:21:01
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Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study
摘要： In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.
关键词： thermal conductivity,high electron mobility transistor,GaN,self-heating effect,copper-filled structure
更新于2025-09-16 10:30:52
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Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
摘要： Self-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The iDS difference between the pulse and DC bias measurement was about 21% at high bias VDS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22 °C in a HEMT operating at ~10.6 Wmm?1 after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.
关键词： thermal management,high electron mobility transistor,self-heating effect,copper filled micro-trench,GaN-on-Si
更新于2025-09-16 10:30:52
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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs
摘要： This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.
关键词： Self-heating effect,HCI,FinFET,Reliability,BTI,EM,Impact of BEOL design,Aging
更新于2025-09-12 10:27:22
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Analysis on DC and AC Characteristics of Self Heating Effect in Nanowire
摘要： As devices are scaling down aggressively, three-dimensional field-effect transistors (FETs) becomes one of essential factors to obtain high gate controllability in order to reduce leakage current. However, insulators surrounding channel for above the reason block heat emission so that the lattice temperature can increase to the critical levels for devices. This phenomenon, called Self Heating Effect (SHE), can deteriorate device performance significantly. From this point of view, overall study on SHE in 5 nm node Nanowire FET (NWFET) was implemented by simulation. Through analysis on on-current (Ion), thermal resistance (Rth), transient characteristics, the DC and AC characteristics were investigated.
关键词： Thermal Resistance (Rth),Self Heating Effect (SHE),Nanowire FET (NWFET)
更新于2025-09-11 14:15:04