- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Edge-plasmon assisted electro-optical modulator
摘要： An efficient electro-optical modulation has been demonstrated here by using an edge-plasmon mode specific for the hybrid plasmonic waveguide. Our approach addresses a major obstacle of the integrated microwave photonics caused by the polarization constraints of both active and passive components. In addition to subwavelength confinement, typical for surface plasmon polaritons, the edge-plasmon modes enable exact matching of the polarization requirements for silicon based input/output grating couplers, waveguides, and electro-optical modulators. A concept of the hybrid waveguide, implemented in a sandwichlike structure, implies a coupling of propagating plasmon modes with a waveguide mode. The vertically arranged sandwich includes a thin layer of epsilon-near-zero material (indium tin oxide) providing an efficient modulation at small length scales. Employed edge plasmons possess a mixed polarization state and can be excited with horizontally polarized waveguide modes. It allows the resulting modulator to work directly with efficient grating couplers and avoid using bulky and lossy polarization converters. A 3D optical model based on Maxwell equations combined with drift-diffusion semiconductor equations is developed. Numerically heavy computations involving the optimization of materials and geometry have been performed. Effective modes, stationary state field distribution, an extinction coefficient, optical losses, and charge transport properties are computed and analyzed. In addition to the polarization matching, the advantages of the proposed model include the compact planar geometry of the silicon waveguide, reduced active electric resistance R and a relatively simple design, attractive for experimental realization.
关键词： polarization constraints,hybrid plasmonic waveguide,drift-diffusion semiconductor equations,electro-optical modulation,edge-plasmon mode,indium tin oxide,epsilon-near-zero material,Maxwell equations
更新于2025-09-11 14:15:04
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Suppression of Coherence Collapse in Semiconductor Fano Lasers
摘要： We show that semiconductor Fano lasers strongly suppress dynamic instabilities induced by external optical feedback. A comparison with conventional Fabry-Perot lasers shows orders of magnitude improvement in feedback stability and in many cases even total suppression of coherence collapse, which is of major importance for applications in integrated photonics. The laser dynamics are analyzed using a generalization of the Lang-Kobayashi model for semiconductor lasers with external feedback, and an analytical expression for the critical feedback level is derived.
关键词： external optical feedback,semiconductor Fano lasers,dynamic instabilities,coherence collapse,Lang-Kobayashi model
更新于2025-09-11 14:15:04
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Ultrathin Polymer Nanofibrils for Solar-Blind Deep Ultraviolet Light Photodetectors Application
摘要： Solar-blind deep ultraviolet photodetectors (DUVPDs) based on conventional inorganic ultrawide bandgap semiconductors (UWBS) have shown promising application in various civil and military fields and yet they can hardly be used in wearable optoelectronic devices and systems for lack of mechanical flexibility. In this study, we report a non-UWBS solar-blind DUVPD by designing ultrathin polymer nanofibrils with a virtual ultrawide bandgap, which was obtained by grafting P3HT with PHA via a polymerization process. Optoelectronic analysis reveals that the P3HT-b-PHA nanofibrils are sensitive to DUV light with a wavelength of 254 nm but are virtually blind to both 365 nm and other visible light illuminations. The responsivity is 120 A/W with an external quantum efficiency of up to 49700%, implying a large photoconductive gain in the photoresponse process. The observed solar-blind DUV photoresponse is associated with the resonant mode due to the leakage mode of the ultrathin polymer nanofibrils. Moreover, a flexible image sensor composed of 10 × 10 pixels can also be fabricated to illustrate their capability for image sensing application. These results signify that the present ultrathin P3HT-b-PHA nanofibrils are promising building blocks for assembly of low-cost, flexible, and high-performance solar-blind DUVPDs.
关键词： image sensor,leakage mode,Optoelectronic device,polymer nanostructures,virtual ultrawide bandgap semiconductor
更新于2025-09-11 14:15:04
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - 55 Gbps error free data transmission with 980 nm VCSELs across 100 m of multiple-mode optical fiber
摘要： Data transmission at 55 Gbps is achieved across 100 meters of optical fiber with a bit error ratio below 1E-12 with 980 nm single cavity oxide aperture diameter vertical cavity surface emitting lasers.
关键词： Semiconductor lasers,Advanced Active Devices,Quantum well,quantum dot and nano-structured photonic devices
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - O-Band Quantum Dot Semiconductor Optical Amplifier Directly Grown on CMOS Compatible Si Substrate
摘要： We report the first demonstration of the O-band quantum dot semiconductor optical amplifier (QD-SOA) that is directly grown on CMOS compatible on-axis silicon substrate. The QD-SOA has a length of 3600 ????, tapered from 4 ???? to 5.5 ????, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
关键词： semiconductor optical amplifiers,molecular beam epitaxy,direct growth on silicon,Quantum dot devices
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - High-Power Mid-Infrared Quantum Cascade Semiconductor Lasers
摘要： Quantum cascade lasers (QCLs) employ intersubband transitions between conduction-band (CB) energy states in multi-quantum-well (MQW) structures, carrier tunneling between adjacent MQW stages, and coherent-light emission from multiple (30-50) stages. Unlike interband-transition semiconductor lasers, QCLs are not affected by Auger recombination in the mid-infrared wavelength range (l= 3-20 μm); thus, allowing them to readily reach lasing at room temperature (RT). However, using multiple stages leads to high voltages (3 10 V) that significantly decrease the wall-plug efficiency, hwp. Thus, although pulsed RT operation was obtained in 1996, it took until 2002 to achieve CW RT operation and until 2008 to obtain 1 W CW power.
关键词： Quantum cascade lasers,QCLs,high-power,semiconductor lasers,mid-infrared
更新于2025-09-11 14:15:04
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Optically oriented attachment of nanoscale metal-semiconductor heterostructures in organic solvents via photonic nanosoldering
摘要： As devices approach the single-nanoparticle scale, the rational assembly of nanomaterial heterojunctions remains a persistent challenge. While optical traps can manipulate objects in three dimensions, to date, nanoscale materials have been trapped primarily in aqueous solvents or vacuum. Here, we demonstrate the use of optical traps to manipulate, align, and assemble metal-seeded nanowire building blocks in a range of organic solvents. Anisotropic radiation pressure generates an optical torque that orients each nanowire, and subsequent trapping of aligned nanowires enables deterministic fabrication of arbitrarily long heterostructures of periodically repeating bismuth-nanocrystal/germanium-nanowire junctions. Heat transport calculations, back-focal-plane interferometry, and optical images reveal that the bismuth nanocrystal melts during trapping, facilitating tip-to-tail “nanosoldering” of the germanium nanowires. These bismuth-semiconductor interfaces may be useful for quantum computing or thermoelectric applications. In addition, the ability to trap nanostructures in oxygen- and water-free organic media broadly expands the library of materials available for optical manipulation and single-particle spectroscopy.
关键词： bismuth-nanocrystal/germanium-nanowire junctions,organic solvents,optical traps,photonic nanosoldering,nanoscale metal-semiconductor heterostructures
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019 - Kerala, India (12–14 June 2019)] PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019 - Insulator to semiconductor transition in graphene quantum dots
摘要： Zero dimensional graphene quantum dots (GQDs) exhibit interesting physical and chemical properties due to the edge effect and quantum confinement. As the number of carbon atoms in edge is more than on basal plane, GQDs are more reactive. Room temperature XRD pattern confirms the formation of the GQDs. UV-Visible spectra confirm that GQDs show optical absorption in the visible region. The emission peaks in the photoluminescence spectra are red shifted with the increase of excitation wavelength. Dynamic light scattering (DLS) analysis shows that the average size of the particles is found to be ~65 nm. The frequency dependent electrical transport properties of the GQDs are investigated in a temperature range from 300 to 500 K. Most interestingly, for the first time, the insulator to semiconductor transition of GQD is observed near 400K. The transition mechanism of GQD is discussed with detailed dielectric analysis. The effects of intercalated water on temperature dependent conductivity are clearly discussed. The dielectric relaxation mechanism is explained in the framework of permittivity, conductivity and impedance formalisms. The frequency dependent ac conductivity spectra follows the Jonscher's universal power law. Cole-Cole model is used to investigate the dielectric relaxation mechanism in the sample.
关键词： Graphene Quantum Dots,Insulator to Semiconductor Transition,Dynamic Light Scattering,Dielectric Relaxation,Photoluminescence
更新于2025-09-11 14:15:04
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Progress in Photonic-Crystal Surface-Emitting Lasers
摘要： Photonic-crystal surface-emitting lasers (PCSELs) have attracted considerable attention as a novel semiconductor laser that surpasses traditional semiconductor lasers. In this review article, we review the current progress of PCSELs, including the demonstration of large-area coherent oscillation, the control of beam patterns, the demonstration of beam steering, and the realization of watt-class and high-beam-quality operation. Furthermore, we show very recent progress in the exploration of high brightness of more than 300 MW cm?2 sr?1, obtained with a high output power of about 10 W while maintaining a high beam quality M2 ~ 2. The PCSELs with such high performances are expected to be applied to a variety of fields, such as laser-based material processing, optical sensing (light-detection and ranging (LiDAR)), and lighting, as they retain the benefits of compact and high-efficiency semiconductor lasers.
关键词： photonic crystal,semiconductor laser
更新于2025-09-11 14:15:04
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Quantum-Correlated Photons from Semiconductor Fiber-Cavity Polaritons
摘要： Over the past decade, exciton-polaritons in semiconductor microcavities have attracted a great deal of interest as driven-dissipative quantum fluids [1]. They offer themselves as a versatile platform for performing Hamiltonian simulations with light as well as for experimentally realizing nontrivial out-of-equilibrium phase transitions. The key ingredient at the basis of these phenomena is the fact that polaritons interact with each other. In the regime of large two-body interactions, polaritons can be used to manipulate the quantum properties of a light field [2,3,4]. A regime of particular interest that has remained elusive so far is the one for which the interactions are large enough to show up in the system response at the level of few quanta, signified by the presence of quantum correlations between the emitted photons [2]. Here we report on the observation of such correlations in laser light transmitted through a fiber-cavity polariton system, indicating the onset of this strong interaction regime [5]. We observe a dispersive shape of the photon autocorrelation function including weak antibunching around the polariton resonance which is a characteristic signature of this phenomenon. From the photon autocorrelation data, we are further able to extract a value for the polariton-polariton interaction constant. Owing to their weak amplitude, the observed quantum correlations remain far from a fully-developed Fock state of light with low photon number, but they still demonstrate the emergence of time-ordering in the photon stream. Nonetheless, given the underlying physical mechanism [2], our work acts as a door opener for the emerging field of quantum polaritonics [6]. With further improvements both on the photonics engineering and the materials engineering side, quantum well cavity polaritons might eventually become a platform of choice for turning laser light into single photons and for realizing strongly interacting quantum fluids of light for quantum simulations.
关键词： quantum-correlated photons,polariton-polariton interaction,semiconductor fiber-cavity polaritons,quantum fluids
更新于2025-09-11 14:15:04