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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Surge current capability of SiC MOSFETs in AC distribution systems
摘要: Whereas short circuit current and time ratings for power converter applications are often stated by SiC device manufacturers, surge current capability for AC electrical apparatus applications are rarely available. This paper present the experimental validation of surge current capability of selected SiC devices for low voltage AC distribution system applications. Because AC electrical apparatus, such as relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated from a different point of view. In fact, robustness to inductive short circuit currents, inrush currents, short and long time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC MOSFETs under different types of AC waveform conditions.
关键词: semiconductor device characterization,temperature measurement,solid state circuit breaker,WBG semiconductor devices,overload capability,surge current,SiC MOSFET,electrical apparatus
更新于2025-09-04 15:30:14