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Wearable Gallium Oxide Solar-blind Photodetectors on Muscovite Mica Having Ultra-High Photoresponsivity And Detectivity With Added High Temperature Functionalities
摘要： Wearable Gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room temperature as well as high temperature operations. The ultra-high photoresponsivity of 9.7 A/W is obtained for 5V applied bias at room temperature under 75 μW/cm2 weak illumination of 270 nm wavelength. The detector enables very low noise equivalent power (NEP) of 9×10-13 W/Hz1/2 and ultra-high detectivity of 2×1012 jones which shows the magnificent detection sensitivity. Further, bending tests are performed for robust utilization of flexible detectors up to 500 bending cycles with each bending radius of 5 mm. After 500 bending cycles, device shows slight photocurrent decrease. The bending performances exhibit excellent potential for wearable applications. Moreover, photocurrent and dark current characteristics above room temperature demonstrate the outstanding functionalities till 523K temperature which is remarkable for flexible photodetectors. The obtained results show the potential of Gallium oxide solar-blind photodetectors at room temperature and high temperatures environments which pave the ways for futuristic smart and flexible sensors.
关键词： photoresponse,Gallium Oxide,Solar-blind photodetectors,detectivity,flexible photodetector,Mica
更新于2025-09-11 14:15:04
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Gallium Oxide || Ga2O3 nanobelt devices
摘要： β-Gallium oxide (β-Ga2O3) is attractive as a novel material for (opto)electronics, especially high-power electronics and solar-blind photodetectors (PDs). It has an ultrawide direct bandgap of around 4.8–4.9 eV at room temperature and high thermal and chemical stabilities [1, 2]. The theoretical electrical breakdown field (Ebr) of β-Ga2O3 is known to be (cid:1)8 MV/cm, and 3.8 MV/cm of Ebr has been experimentally demonstrated in a recent report, recording a higher value than those of GaN and SiC. Baliga’s figure of merit (BFOM) of β-Ga2O3 is also superior among some of the other popular wide-bandgap semiconductors, such as 4H-SiC and GaN [3–6]. These outstanding properties have led to a large number of reports on various electrical devices based on β-Ga2O3 including metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs), and Schottky barrier diodes [7–10]. Furthermore, the wide bandgap of β-Ga2O3 provides intrinsic solar blindness that allows fabrication of solar-blind PDs without the need for additional optical filters that block light in the range of long wavelength [11]. Single-crystal β-Ga2O3 is commercially available as a various of growth methods exist; especially the edge-defined film-fed growth (EFG) method that can be used to grow bulk β-Ga2O3 substrates with high crystal quality [12, 13]. However, the low thermal conductivity of β-Ga2O3 has to be considered when fabricating high-power electrical devices.
关键词： high-power electronics,β-Ga2O3,wide-bandgap semiconductors,optoelectronics,solar-blind photodetectors
更新于2025-09-09 09:28:46
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Solar Blind UV Light Induced Photo‐Voltage from Transparent Y <sub/>2</sub> O <sub/>3</sub> : Eu‐PMMA Nanocomposite Film
摘要： Transparent inorganic-organic nanocomposite film (Y2O3: Eu-PMMA)W is fabricated for solar blind UV light photo-voltage response at room temperature. In suggested design, Y2O3: Eu nanoparticales with efficient visible luminescence excited under solar blind UV light is incorporated into an Y2O3: Eu-PMMA nanocomposite film coated onto a glass substrate, which converts solar blind UV light to visible light that is absorbed by the Si-detector. Photo-voltage response from the thin film Si-APD detector attached with the inorganic-organic nanocomposite film demonstrates a prospective application for solar blind UV light detection.
关键词： luminescence,UV detector,rare-earth-doped materials,solar blind UV light
更新于2025-09-04 15:30:14