Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices

摘要： Exploring optical memory functions in nonvolatile organic field-effect transistor (OFET) memories with top-gate/bottom-contact (TG/BC) configurations can offer effective routes for developing printable, high-density organic memory circuits capable of multi-level data storage. Here, we use a solution process to fabricate TG/BC OFET devices with organic floating-gate structures and investigate their memory characteristics under light illumination. A solution-processable organic composite of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and poly(methylmethacrylate) is employed to self-organize organic floating-gate structures on a solution-processed semiconductor layer composed of poly(3-hexylthiophene) (P3HT). The floating-gate OFET devices programmed with blue, green, and red light exhibit large threshold voltage (Vth) shifts of approximately 30 V and stable charge retention characteristics even under light illumination. The devices also exhibit high sensitivity to incident light during programming, and the degree of Vth shift and the on-state current can be tuned using light and programming voltage to facilitate distinct storage and readout of multi-level data.