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[IEEE 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Khulna, Bangladesh (2019.12.20-2019.12.22)] 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Effect of growth temperature on the structural and optical properties of CdS:O thin films for CdTe solar cells
摘要： Oxygenated Cadmium Sulfide (CdS:O) is used as a window layer for high-performance CdTe thin-film solar cells. In this work, the effect of growth temperature on the physical properties of (CdS:O) layer is reported. The CdS:O layer was synthesized on commercially available soda-lime glass (SLG) by using a reactive radio frequency (RF) sputtering in 1.5% oxygen (O2)/argon (Ar) ambient as a function of substrate temperature (25 °C to 300 °C). The structural and optical properties of the as-grown CdS:O thin films were carried out by X-ray diffraction and UV-VIS-Spectroscopy respectively. The XRD patterns revealed intriguing structural natures of the deposited films such as amorphous/semi-amorphous nature in the substrate temperature range 25 – 150 °C, then polycrystalline nature in the range 200 – 250 °C and again amorphous nature at 300 °C. The transmission spectra exhibited higher optical transmission in the visible wavelength which signifies the enhancement of photo generated current of CdTe solar cells. The bandgap of room temperature (RT) deposited CdS:O thin film for 1.5% O2/Ar was found to be increased 12.50% in comparison with CdS film deposited in pure Ar ambient. Besides, the bandgap of CdS:O films for 1.5% O2/Ar was decreased with the increase of the substrate temperature. Thus, it has been concluded that the CdS:O thin film deposited at RT found to be better for CdTe solar cell application.
关键词： optical bandgap,substrate temperature,CdTe,rf-sputtering,O2/Ar ratio,Crystallite size,CdS:O
更新于2025-09-23 15:21:01
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Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber
摘要： Zn3-3xMg3xN2 alloy layers with x ≤ 0.3 can be epitaxially grown at a temperature as low as 140 oC. The bandgap (Eg) of Zn3-3xMg3xN2 widens from 1.2 to 2.1 eV with increasing x. The Eg value of 1.4 eV is obtained at x = 0.18, and the x = 0.18 film has a large absorption coefficient (104-105 cm-1) in the visible region. The Zn3-3xMg3xN2 with Eg = 1.4 eV shows n-type conductivity with a reasonably high electron mobility of 47 cm2 V-1 s-1. Therefore, Zn3-3xMg3xN2 is a candidate for an earth-abundant solar absorber that can be fabricated at low temperatures.
关键词： Nitride alloy,Bandgap tunability,Photovoltaic semiconductors,Sputtering
更新于2025-09-23 15:21:01
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Influence of ion species of AuSi liquid metal alloy source-focused ion beam on SiO2/Si nanopatterning
摘要： This work investigates the influence of the ion source (Au+ and Si+2 ions) of liquid metal alloy source-focused ion beam on the nanopattering. Two sets of SiO2/Si nanopatterns with a width of 450 nm on Silicon on insulator (SOI) substrate are fabricated by 30 keV Au+ and Si+2 ions, respectively. To study this effect, the sputtering yield is calculated using the volume loss method from atomic force microscopy (AFM) profiles obtained for each set. The results of the sputtering yield were compared with theoretical results calculated from Yamamura model for normal incidence for validation. The comparison showed a good agreement between the two results with a relative difference of about 5.3 % obtained using Si+2 ions.
关键词： Liquid metal alloy source-focused ion beam,Milling,Sputtering yield,Nanopattering
更新于2025-09-23 15:21:01
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Investigation of temperature stability of ITO films characteristics
摘要： The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100?С without deterioration of their parameters.
关键词： thermal stability,transparent heating elements,magnetron sputtering,ITO films
更新于2025-09-23 15:21:01
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Argon clustering in silicon under low-energy irradiation: Molecular dynamics simulation with different Ar–Si potentials
摘要： In this paper, the authors carried out a molecular dynamics simulation of crystal and amorphous silicon sputtering by low-energy (200 eV) Ar ions at normal incidence. The gradual damage of silicon caused by the ion bombardment was taken into account in order to study the dynamics of argon accumulation and clustering. For describing interatomic Ar–Si interaction, they used three different potentials: two binary screened Coulomb potentials (Molière and Ziegler–Biersack–Littmark) and the potential developed on the basis of density functional theory. The obtained results demonstrated the substantial influence of the chosen Ar–Si potential on calculated sputtering yields and on the processes of argon accumulation and clustering.
关键词： silicon sputtering,molecular dynamics simulation,Ar–Si potentials,argon clustering,low-energy irradiation
更新于2025-09-23 15:21:01
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Magnetron sputtered SnO <sub/>2</sub> constituting double electron transport layers for efficient PbS quantum dots solar cells
摘要： In this work, for the first time, we have successfully demonstrated that radiofrequency (RF) magnetron sputtered SnO2 can be a qualified alternative electron transport layer (ETL) for high-efficiency PbS quantum dot (QD) solar cell. Our highest-performing device using such a SnO2 ETL obtained an efficiency of 8.4%, which is comparable to the sol-gel ZnO based one (8.8%). The excellent performance mainly results from the improved current density, which is attributed to the superior properties of SnO2 ETL, such as the high electron mobility and excellent optical transmittance. However, we also found that the sputtered SnO2 based devices show smaller voltage and fill factor due to the unsatisfied surface morphology and energy level alignment. By combining a thin (around 10 nm) sol-gel ZnO film on top of sputtered SnO2 film to form the double ETL, we obtained the best efficiency of 10.1%, which is the highest efficiency for using SnO2 ETL in PbS QD solar cell. Our work not only provides a new avenue to improve the efficiency of PbS QD solar cells but also offers the possibility to use the industry compatible sputtering technique for PbS QD solar cells.
关键词： electron transporting layer,SnO2,magnetron sputtering,PbS,quantum dot solar cell
更新于2025-09-23 15:21:01
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Efficiency enhancement of TiOx electron-transporting layer-based ultrathin p-type c-Si solar cell by reactive sputtering of backside MoOx hole-transporting contact
摘要： The importance of efficient carrier selective transport at the backside contact significantly increases with thickness reduction of c-Si solar cells. Here, MoOx backside hole-transporting layer is fabricated on TiOx electron-transporting layer-based ultrathin c-Si solar cell with a final configuration of Ag/ITO/Mg/TiOx/45 μm p-type c-Si/MoOx/Ag by reactive magnetron sputtering method at room temperature. The effects of oxygen ratio and sputtering power on the film phase, bandgap, and surface roughness are investigated. Moreover, the contact performance between Ag and p-type c-Si is systematically studied and optimized by MoOx insertion. Based on the optimized MoOx thin film, the obtained totally dopant-free cell shows an enhancement of all cell parameters with a resultant high efficiency of 12.81%, which is about 12.8% relatively higher than that of conventional backside p+-based one (11.36%). In the combination of experiment and simulation processes, better performance of MoOx-based cell can be ascribed to the improvement of both electrical and optical performances of the device. The realization of MoOx-based contact at room temperature enables the solar cell fabrication under planar state possible, which can greatly avoid the bowing effect and reduce the yield losses and energy consumption during the fabrication of ultrathin c-Si solar cells.
关键词： reactive sputtering,c-Si solar cell,hole-transporting contact,MoOx,TiOx
更新于2025-09-23 15:21:01
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Effect of substrate temperature on the properties of RF sputtered CdS thin films for solar cell applications
摘要： We report the effect of substrate temperature (25–300 °C) on the structural, optical and electrical properties of Cadmium Sulphide (CdS) thin films deposited onto glass substrate by Radio Frequency (RF) magnetron sputtering. The structural, morphological, optical and electrical properties of the films were characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), UV–VIS-NIR spectroscopy and Hall Effect measurement respectively. The XRD studies showed that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along the (0 0 2) plane parallel to the substrate surface. The XRD data analysis further revealed the crystallite size of the nanocrystalline films i.e. 22–24 nm exhibiting the fact that crystallite size increased with increasing the substrate temperature. The FE-SEM images along with energy dispersive spectroscopy (EDS) studies confirmed the homogeneous, compact and pin-hole free surface morphology. The UV–VIS-NIR studies unveiled the optical transmittance in the range of 75–90% after 540 nm of the wavelength of light. The optical band gaps were found to be decreasing from 2.34 eV to 2.26 eV with increasing the substrate temperature. The films were characterized as n-type as evidenced by the Hall Effect measurement. The carrier mobility was found to be increasing gradually from 5.53 to 12.57 cm2/V·s by increasing the substrate temperature from room temperature to 300 °C due to the improvement of crystalline quality and grain size of the films. The results showed good optical and electrical properties of the films deposited at 300 °C which are suitable to use as window layer in thin film based solar cells.
关键词： CdS,UV–VIS-NIR,XRD,Hall effect measurement,Thin films,Substrate temperature,RF sputtering
更新于2025-09-23 15:21:01
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Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application
摘要： In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10?2 ? cm was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.
关键词： working pressure,Al doped ZnO-MgO powder,RF magnetron sputtering,photovoltaic applications,thin films,solid-state method,optoelectronic properties
更新于2025-09-23 15:21:01
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LED Structures Based on ZnO Films Obtained by RF Magnetron Sputtering for the UV Spectral Range
摘要： Data for the influence of different defects on the photoluminescence and electroluminescence spectra (emission intensity and wavelength) of n-ZnO/p-GaN structures are reported.
关键词： ZnO films,photoluminescence,RF magnetron sputtering,UV spectral range,electroluminescence
更新于2025-09-23 15:21:01