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Strain tunable quantum dot based non-classical photon sources
摘要： Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.
关键词： quantum dot,on-chip,piezoelectric crystal,entangled photons,fine structure splitting,strain tuning
更新于2025-09-19 17:13:59
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GaAs Quantum Dot in a Parabolic Microcavity Tuned to <sup>87</sup> Rb D <sub/>1</sub>
摘要： We develop a structure to efficiently extract photons emitted by a GaAs quantum dot tuned to Rubidium. For this, we employ a broadband microcavity with a curved gold backside mirror which we fabricate by a combination of photoresist reflow, dry reactive ion etching in an inductively coupled plasma and selective wet chemical etching. Precise reflow and etching control allows us to achieve a parabolic backside mirror with a short focal distance of 265 nm. The fabricated structures yield a predicted (measured) collection efficiency of 63 % (12 %), an improvement by more than one order of magnitude compared to unprocessed samples. We then integrate our quantum dot parabolic microcavities onto a piezoelectric substrate capable of inducing a large in-plane biaxial strain. With this approach, we tune the emission wavelength by 0.5 nm/kV, in a dynamic, reversible and linear way, to the Rubidium D1 line (795 nm).
关键词： two-photon resonance fluorescence,strain tuning,microcavity,single-photon source,extraction efficiency,semiconductor quantum dots
更新于2025-09-12 10:27:22
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Ultrawide strain-tuning of light emission from InGaAs nanomembranes
摘要： Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. These mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.
关键词： strain-tuning,nanomembranes,photoluminescence,light emission,InGaAs
更新于2025-09-10 09:29:36
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Strain-tunable quantum integrated photonics
摘要： Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox, as they show excellent single photon emission properties in addition to their potential as solid state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters, in a deterministic, reversible, and non-intrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III-V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum integrated photonics, with full control over the quantum sources and the photonic circuit.
关键词： ring resonator,nanowires,strain tuning,quantum dot,single photon,quantum integrated photonics
更新于2025-09-09 09:28:46