High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon

摘要： Flexible photodetectors (PDs) prepared with silicon-based materials have received considerable attention for use in a wide range of portable and wearable applications. In this study, we present the first free-standing flexible PD based on sulfur-hyperdoped ultrathin silicon, which was fabricated using a femtosecond laser in SF6 atmosphere. It is found that the fabricated device exhibits excellent performance of broadband photoresponse from 400 to 1200 nm, with peak responsivity of 63.79 A/W @ 870 nm at a low bias voltage of -2 V, corresponding to an external quantum efficiency reaching 9092%, which surpasses most values reported for silicon-based flexible PDs. In addition, the device shows a fast response speed (rise time τr=68 μs) and stable detection performance with good mechanical flexibility. The high-performance PD described here suggests a promising way in flexible applications for sensors, imaging systems, and optical communication systems.