[IEEE 2018 IEEE International Semiconductor Laser Conference (ISLC) - Santa Fe, NM (2018.9.16-2018.9.19)] 2018 IEEE International Semiconductor Laser Conference (ISLC) - High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

摘要： We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.