GaN Transistors for Efficient Power Conversion || Driving GaN Transistors

摘要： This chapter discusses the basic techniques for using GaN transistors in high performance power conversion circuits. GaN transistors generally behave like power MOSFETs, but at much higher switching speeds and power densities. A good understanding of these similarities and differences is fundamental to understanding by how much existing power conversion systems can be improved by using GaN-based device technologies. The next three chapters highlight the benefits of GaN technology, design techniques for maximum performance, and ways to avoid common pitfalls that can result from the new GaN performance capabilities. Techniques to be addressed include: how to drive a GaN transistor, how to layout a high-efficiency GaN transistor circuit, and how to model and measure, both thermally and electrically, a high power-density GaN transistor-based circuit.