- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Background Light Rejection in SPAD-Based LiDAR Sensors by Adaptive Photon Coincidence Detection
摘要： Light detection and ranging (LiDAR) systems based on silicon single-photon avalanche diodes (SPAD) offer several advantages, like the fabrication of system-on-chips with a co-integrated detector and dedicated electronics, as well as low cost and high durability due to well-established CMOS technology. On the other hand, silicon-based detectors suffer from high background light in outdoor applications, like advanced driver assistance systems or autonomous driving, due to the limited wavelength range in the infrared spectrum. In this paper we present a novel method based on the adaptive adjustment of photon coincidence detection to suppress the background light and simultaneously improve the dynamic range. A major disadvantage of fixed parameter coincidence detection is the increased dynamic range of the resulting event rate, allowing good measurement performance only at a specific target reflectance. To overcome this limitation we have implemented adaptive photon coincidence detection. In this technique the parameters of the photon coincidence detection are adjusted to the actual measured background light intensity, giving a reduction of the event rate dynamic range and allowing the perception of high dynamic scenes. We present a 192 × 2 pixel CMOS SPAD-based LiDAR sensor utilizing this technique and accompanying outdoor measurements showing the capability of it. In this sensor adaptive photon coincidence detection improves the dynamic range of the measureable target reflectance by over 40 dB.
关键词： system-on-chip (SoC),single-photon avalanche diode (SPAD),CMOS,light detection and ranging (LiDAR),time-of-flight (TOF),background light rejection
更新于2025-09-23 15:22:29
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Kapitza Pendulum Effect with Overclocked Raman Comb Solitons in a Microring Resonator
摘要： In modern RF system on chips (SoCs), the digital content consumes up to 85% of the IC chip area. The recent push to integrate multiple RF-SoC cores is met with heavy resistance by the remaining RF/analog circuitry, which creates numerous strong aggressors and weak victims leading to RF performance degradation. A key such mechanism is injection pulling through parasitic coupling between various LC-tank oscillators as well as between them and strong transmitter (TX) outputs. Any static or dynamic frequency proximity between aggressors (i.e., oscillators and TX outputs) and victims (i.e., oscillators) that share the same die causes injection pulling, which produces unwanted spurs and/or modulation distortion. In this paper, we propose and demonstrate a new frequency planning technique of a multicore TX where each LC-tank oscillator is separated from other aggressors beyond its pulling range. This is done by breaking the integer harmonic frequency relationship of victims/aggressors within and between the RF transmission channels using digital fractional divider based on a phase rotation. Each oscillator’s center frequency can be fractionally separated by ～28% but, at the same time, both producing closely spaced frequencies at the phase rotator outputs. The injection-pulling spurs are so far away that they are insigni?cantly small (?80 dBc) and coincide with the second harmonic of the carrier. This method is experimentally veri?ed in a two-channel system in 65-nm digital CMOS, each channel comprising a high-swing class-C oscillator, frequency divider, and phase rotator.
关键词： digitally controlled oscillator (DCO),Digital fractional divider,RF-SoC,multi-core radio,frequency pulling,system on chip (SoC),injection locking
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hangzhou, China (2019.7.2-2019.7.5)] 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) - Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation
摘要： In modern RF system on chips (SoCs), the digital content consumes up to 85% of the IC chip area. The recent push to integrate multiple RF-SoC cores is met with heavy resistance by the remaining RF/analog circuitry, which creates numerous strong aggressors and weak victims leading to RF performance degradation. A key such mechanism is injection pulling through parasitic coupling between various LC-tank oscillators as well as between them and strong transmitter (TX) outputs. Any static or dynamic frequency proximity between aggressors (i.e., oscillators and TX outputs) and victims (i.e., oscillators) that share the same die causes injection pulling, which produces unwanted spurs and/or modulation distortion. In this paper, we propose and demonstrate a new frequency planning technique of a multicore TX where each LC-tank oscillator is separated from other aggressors beyond its pulling range. This is done by breaking the integer harmonic frequency relationship of victims/aggressors within and between the RF transmission channels using digital fractional divider based on a phase rotation. Each oscillator’s center frequency can be fractionally separated by ～28% but, at the same time, both producing closely spaced frequencies at the phase rotator outputs. The injection-pulling spurs are so far away that they are insigni?cantly small (?80 dBc) and coincide with the second harmonic of the carrier. This method is experimentally veri?ed in a two-channel system in 65-nm digital CMOS, each channel comprising a high-swing class-C oscillator, frequency divider, and phase rotator.
关键词： digitally controlled oscillator (DCO),Digital fractional divider,RF-SoC,multi-core radio,frequency pulling,system on chip (SoC),injection locking
更新于2025-09-19 17:13:59