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- low-temperature electronics
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- Surface temperature distribution
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- Don State Technical University
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Temperature Chamber with Precise Temperature Stability
摘要： This paper describes a system to maintain stable air temperature in a temperature chamber. The aim of the system is to stabilize temperature of resistance standards during measurements. Particular attention was paid to provide precise air temperature stabilization. The construction of temperature chamber and the results of long-term tests are also presented.
关键词： Temperature chamber,temperature stabilization system,resistance measurement
更新于2025-09-09 09:28:46
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[IEEE 2018 International Conference on Communication and Signal Processing (ICCSP) - Chennai, India (2018.4.3-2018.4.5)] 2018 International Conference on Communication and Signal Processing (ICCSP) - Statistical Analysis of Surface Temperature Distribution Pattern in Plantar Foot of Healthy and Diabetic Subjects Using Thermography
摘要： Diabetic foot complications are a major cause of concern for diabetic patients as it affects mobility and quality of life. Any computer aided diagnosis system would be very useful in the early detection and hence treatment and cure. For such a system, the surface temperature distribution patterns in the plantar region of the foot of both healthy and diabetic subjects have to be analyzed to detect any abnormality. In this paper we have analyzed the infrared thermal images of 62 diabetic and 20 healthy subjects to identify the temperature distribution patterns capable of detecting diabetic foot complications. The images were taken using Fluke TiX560 thermal imager. Image processing and analysis was done in MATLAB.
关键词： Infrared Thermography,Statistical Analysis,Mean Temperature Difference,Surface temperature distribution,Diabetic Foot Complications,Correlation
更新于2025-09-09 09:28:46
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High Temperature Operation Limit Assessment for 4H-SiC Schottky Diode-based Extreme Temperature Sensors
摘要： We developed a simplified theoretical model for parameters calculation of diode temperature sensors (DTS) based on Schottky diodes (SD). The current flow mechanism of the diodes considered was dominated by over-barrier thermionic emission. Qualitative correlations between basic fundamental and electrophysical parameters of such DTS were established. The expressions for ultimate high-temperature parameters of the DTS were obtained. Theoretical results obtained were approved using test samples of DTS with Schottky contact Ni/n-SiC (4H). It was shown that physical high-temperature limit of operation of such a DTS (>1250 K) exceeded the values of commercial DTS based on Si, GaAs, AlGaAs p-n junctions. And the SD-based DTS itself demonstrated significantly lower energy consumption.
关键词： wide bandgap,thermal sensitivity,high temperature,Schottky diode,temperature sensor,semiconductor,thermal limit
更新于2025-09-09 09:28:46
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Temperature Measurement Method for Blast Furnace Molten Iron Based on Infrared Thermography and Temperature Reduction Model
摘要： The temperature measurement of blast furnace (BF) molten iron is a mandatory requirement in the ironmaking process, and the molten iron temperature is signi?cant in estimating the molten iron quality and control blast furnace condition. However, it is not easy to realize real-time measurement of molten iron temperature because of the harsh environment in the blast furnace casthouse and the high-temperature characteristics of molten iron. To achieve continuous detection of the molten iron temperature of the blast furnace, this paper proposes a temperature measurement method based on infrared thermography and a temperature reduction model. Firstly, an infrared thermal imager is applied to capture the infrared thermal image of the molten iron ?ow after the skimmer. Then, based on the temperature distribution of the molten iron ?ow region, a temperature mapping model is established to measure the molten iron temperature after the skimmer. Finally, a temperature reduction model is developed to describe the relationship between the molten iron temperature at the taphole and skimmer, and the molten iron temperature at the taphole is calculated according to the temperature reduction model and the molten iron temperature after the skimmer. Industrial experiment results illustrate that the proposed method can achieve simultaneous measurement of molten iron temperature at the skimmer and taphole and provide reliable temperature data for regulating the blast furnace.
关键词： skimmer,taphole,blast furnace,temperature reduction model,molten iron temperature,infrared thermography
更新于2025-09-09 09:28:46
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Dependence of Noise Temperature of Superconducting HEB Mixers on Frequency and Bath Temperature
摘要： A log-spiral antenna coupled 0.1-1.5 THz NbN superconducting HEB mixer has been characterized by measuring its double sideband (DSB) receiver noise temperature (Trec) from 0.22 THz to 1.44 THz and at 4 K-7 K bath temperatures. The measured uncorrected Trec is 800 K, 800 K, 750 K and 850 K at 0.22 THz, 0.55 THz, 0.85 THz and 1.44 THz respectively. The optimal bias voltage seems independent to the frequency and bath temperature. The bath-temperature dependence of noise temperature has also been investigated, the bath temperature has limited effect on the noise temperature when it is operated below its transition temperature. A similar frequency response of corrected mixer noise temperature has been observed at 4 K and 7 K bath temperature, which indicates the RF coupling efficiency of planar spiral antenna of HEB mixer.
关键词： frequency dependence,receiver noise temperature,bath temperature dependence,Superconducting HEB mixer
更新于2025-09-09 09:28:46
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High temperature impedance properties and conduction mechanism of W <sup>6+</sup> -doped CaBi <sub/>4</sub> Ti <sub/>4</sub> O <sub/>15</sub> Aurivillius piezoceramics
摘要： Effects of W6+ doping on the phase structural and electrical properties, especially the conduction mechanism at a higher temperature of CaBi4Ti4O15 Aurivillius piezoceramics, have been investigated systematically. The conductivity properties at a temperature range from 500 °C to 650 °C have been characterized by complex impedance spectroscopy. The conductivity shows a nature of ionic conduction mechanism and non-Debye relaxation process at a higher temperature. The non-Debye relaxation behavior and conduction process are dominated by the jump of charge carriers, which can be demonstrated by the similar values of the relaxation activation energy (1.45 eV), hopping conduction energy (1.50 eV), and dc conduction energy (1.39 eV). Meanwhile, the piezoelectric coef?cient d33 of CaBi4Ti4O15 has been improved from 7.5 pC/N to 17.8 pC/N and keeps good temperature stability up to 650 °C with appropriate W6+ doping. These results provide a profound insight into the conduction process and mechanism from the viewpoint of microstructure, which is greatly bene?cial for the high-temperature application of Aurivillius piezoceramics.
关键词： Aurivillius piezoceramics,impedance properties,conduction mechanism,CaBi4Ti4O15,high temperature,W6+-doped
更新于2025-09-09 09:28:46
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Modifications in structural, optical and electrical properties of nanocrystalline CdO: role of sintering temperature
摘要： Present report deals with the synthesis of nanocrystalline cadmium oxide (CdO) using low-cost acetate precursor based modified sol–gel technique. Final product was sintered at different temperatures and studied for their structural, optical and electrical properties. In this present work, we report the sintering temperature-dependent structural, optical and electrical properties of nanocrystalline cadmium oxide (CdO) grown by cost effective sol–gel method. Structural properties of CdO materials were investigated by X–ray diffraction (XRD) which reveals the crystalline phase of the samples without any detectable impurity within the range of measurements. Crystallite size (CS), calculated using Scherer’s formula, is found in the range of nanometer (<100 nm) and increases with increasing sintering temperature. Average crystallite size of all CdO nanocrystals were estimated using the William–Hall (W–H) plots from XRD patterns. Furthermore, transmission electron microscopy (TEM) images were captured to check the crystallinity and particle growth of the samples. The optical properties of nanocrystalline CdO were studied by using UV–Visible (UV–Vis) absorption spectrum. High absorption has been observed for nanocrystalline CdO sintered at lower temperatures. The band gap of nanocrystalline CdO was calculated by using Tauc’s law where band gap increases with increasing sintering temperature. The electrical properties of the samples were studied by performing dielectric and AC conductivity measurements. It is observed that dielectric constant decreases with increase in frequency and sintering temperature. Variation in AC conductivity with light and sintering temperature has been discussed in detail.
关键词： Nanocrystalline,Photoconduction,Sol–gel synthesis,Sintering temperature
更新于2025-09-09 09:28:46
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Temperature Compensation on Sugar Content Prediction of Molasses by Near-Infrared Spectroscopy (NIR)
摘要： The rapid, nondestructive, cost-effective NIR measurement method was used for final molasses quality monitoring to determine fermentable sugar content to optimize ethanol yield. Molasses is stored in temperature-controlled tanks during the cane crushing and remelt seasons to ensure molasses quality and availability. However, there is variation in molasses temperature during storage. The impacts of temperature variation on molasses NIR spectra and calibration performance were studied. About one hundred molasses samples were collected for spectral profiling (400–2500 nm) at three different temperatures (25, 35 and 45 °C) using a FOSS NIR DS2500 spectrometer. A partial least squares regression (PLSR) model was developed using full cross-validation. The predictive models were developed using molasses spectra at 25, 35 and 45 °C and used to determine sucrose, glucose, fructose (fermentable sugars) concentrations in the molasses. External validation was achieved using thirty percent of calibration samples for each validation set, 25, 35, and 45 °C. Variation of the sample spectra was observed for the visible region and NIR region (1450 and 1970 nm), due to O–H bonding. The root means squared standard error of cross-validation obtained varied depending on sample temperature. Root means squared standard error of prediction results for external validation samples tended to increase with increasing temperature. Predicted values were not statistically different (p > 0.05) to reference values using different temperatures of models and validation. Calibration models including three temperature spectra showed potential of fermentable sugar analysis in molasses without temperature compensation.
关键词： Molasses,Non-destructive,Temperature compensation,Rapid,Near Infrared Spectroscopy
更新于2025-09-09 09:28:46
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High Ferroelectricities and High Curie Temperature of BiInO <sub/>3</sub> PbTiO <sub/>3</sub> Thin Films Deposited by RF Magnetron Sputtering Method
摘要： Properties of ferroelectric ??BiInO3-(1 ? ??)PbTiO3 (??BI-(1 ? ??)PT) thin films deposited on (101) SrRuO3/(200) Pt/(200) MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated. The structures of the ??BI-(1???)PT films are characterized by x-ray diffraction and scanning electron microscopy. The results indicate that the thin films are grown with mainly (001) orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process. The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents, 2 mol% La2O3 is doped in the targets. The ?? –?? hysteresis loops show that the optimized ??BI-(1 ? ??)PT (?? = 0.24) film has high ferroelectricities with remnant polarization 2??r = 80 ??C/cm2 and coercive electric field 2??c = 300 kV/cm. The Curie temperature is about 640°C. The results show that the films have optimum performance and will have wide applications.
关键词： ferroelectric,rf magnetron sputtering,BiInO3-PbTiO3,thin films,Curie temperature
更新于2025-09-09 09:28:46
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Flexible dual-mode SAW strain sensor based on crystalline LiNbO3 thin film
摘要： This work presents the development of flexible dual-mode surface acoustic wave (SAW) sensor based on single crystalline thin film lithium niobate (TF-LN). Numerical modeling is conducted to investigate the SAW propagation and the effects on strain sensitivity. The dependence of strain sensitivity on angles between the applied strain and SAW propagation direction is analyzed numerically and experimentally, showing that the maximum strain sensitivity is at 45° rather than longitudinal direction. 128° Y-cut TF-LN (~50 μm), obtained by micromachining technique, is utilized as the piezoelectric substrate to fabricate the SAW strain sensors with dual mode, namely Rayleigh mode and thickness shear mode (TSM). The sensor has excellent flexibility and demonstrates remarkable capability for an ultra-wide range strain measurement up to ±3000 με. Temperature effects on resonant frequency and strain sensitivity are investigated in the range of 25 ~ 100 ℃, and similar temperature characteristics are observed for the dual modes. A method of beat frequency between the dual modes is introduced which is able to eliminate the temperature effect on strain sensing, an on-chip temperature influence removing capability. All the results clearly show that this sensor exhibits great potential for applications in flexible electronics and microsystems.
关键词： dual-mode,temperature cancellation,flexible strain sensor,LiNbO3 thin film,surface acoustic wave
更新于2025-09-09 09:28:46