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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Cooled Silicon-On-Insulator Diode Thermometer: Toward THz Passive Imaging
摘要: Terahertz passive imaging requires high sensitivity detectors, with Minimum Detectable Power (MDP) under the picowatt range. An antenna-coupled cooled microbolometer, incorporating a lateral PiN-like diode as thermometer, could represent a solution. In a first step, such diode performances have to be investigated, especially the temperature coefficient of current (TCC) and the low frequency noise. Prototypes were fabricated on Silicon-On-Insulator (SOI) 4” wafers with 50-nm active silicon layer. I-V and noise measurements down to 81K were useful to derive the electrical MDP of the future bolometer, already reaching 6.6 pW at 10 frames per second.
关键词: low frequency noise,microbolometer,Minimum Detectable Power,PiN diode,temperature coefficient of current,Silicon-On-Insulator,Terahertz passive imaging
更新于2025-09-12 10:27:22