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Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
摘要： In this study, we present the feasibility to fabricate back-gated graphene field-effect transistors (GFETs) on 10 nm thermal SiO2 substrate. Here, we compare the mobility of graphene devices at different locations of the transferred CVD graphene. We observed that there is a n-type doping of the graphene devices with Dirac points within ± 0.5 V from an ideal value of 0 V. The downscaling of the back-gate dielectric thickness reduces the operating voltage range, commonly required for low power electronics, and the devices are stable during operation in air under ambient conditions. The extracted contact resistance is comparable to the earlier reports found in literature and this provides a feasibility to fabricate low power futuristic graphene based nanoelectronics.
关键词： CVD graphene,n-type doping,thermal SiO2,mobility,Dirac points,low power electronics,field-effect transistors,graphene,contact resistance
更新于2025-09-23 15:21:01
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Nucleation of diindenoperylene and pentacene at thermal and hyperthermal incident kinetic energies
摘要： The authors have examined the nucleation of diindenoperylene (DIP) on SiO2 employing primarily atomic force microscopy and focusing on the effect of incident kinetic energy employing both thermal and supersonic sources. For all incident kinetic energies examined (Ei ? 0.09–11.3 eV), the nucleation of DIP is homogeneous and the dependence of the maximum island density on the growth rate is described by a power law. A critical nucleus of approximately two molecules is implicated by our data. A re-examination of the nucleation of pentacene on SiO2 gives the same major result that the maximum island density is determined by the growth rate, and it is independent of the incident kinetic energy. These observations are readily understood by factoring in the size of the critical nucleus in each case, and the island density, which indicates that diffusive transport of molecules to the growing islands dominate the dynamics of growth in the submonolayer regime.
关键词： thermal,SiO2,supersonic sources,diindenoperylene,hyperthermal,kinetic energies,nucleation,atomic force microscopy,pentacene
更新于2025-09-09 09:28:46