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oe1(光电查) - 科学论文

14 条数据
?? 中文(中国)
  • Ultrafast Fabrication of Thermoelectric Films by Pulsed Light Sintering of Colloidal Nanoparticles on Flexible and Rigid Substrates

    摘要: Sintered thermoelectric (TE) nanoparticle films are known to have a high figure-of-merit ZT factor and are considered for waste heat recovery and heating and cooling applications. The conventional process of thermal sintering of TE nanoparticles requires an inert environment and long heating times, and cannot be used on polymer substrates due to the requirements of the process (e.g., heating up to 400 °C). In this communication, the authors demonstrate for the first time the use of an intense flash of UV light from a Xenon lamp to sinter TE nanoparticles within milliseconds under ambient conditions on flexible polymer as well as glass substrates to create functional TE films. Photonic sintering is used to fabricate Bismuth Telluride thermoelectric films with a conductivity of 3200 S m?1 (a 5–6 orders of magnitude increase over unsintered films) and a peak power factor of 30 mW m?1 K?2. Modeling is used to gain an insight into the physical processes occurring during photonic sintering process and identify the critical parameters controlling the process. This work opens-up an exciting possibility of extremely rapid fabrication of TE generators under ambient conditions on a variety of flexible and rigid substrates.

    关键词: power factor,ZT factor,thermoelectrics,Bi-Te nanoparticles,energy harvesting,photonic sintering

    更新于2025-09-09 09:28:46

  • Detection of oxygen sub-lattice ordering in A-site deficient perovskites through monochromated core-loss EELS mapping

    摘要: Perovskite oxides are widely studied for a variety of applications, from thermoelectrics to fuel cells. Part of the attraction lies in the fact that perovskite ceramics are relatively easy to dope chemically over a wide range of compositions, resulting in various degrees of structural ordering. As a consequence, the properties and functionalities of such materials can be readily tailored. For instance in systems proposed for thermoelectric applications, the presence of superlattices, or domain boundaries vacancies can suppress the thermal conductivity due to increased phonon scattering. Understanding therefore the mechanisms behind the formation of such types of ordering in ceramic systems is crucial for their implementation in engineering applications. Here, we report on an A-site deficient perovskite system based on the Nd2/3xTiO3 double perovskite. This system, a candidate for thermoelectric applications, has attracted significant attention due to the presence of a peculiar superstructure originating in part in A-site cation vacancy ordering. Using aberration corrected Scanning Transmission Electron Microscopy we investigate a series of Nd2/3xTiO3 ceramics engineered to possess different degrees of A-site cation-vacancy ordering and as a result vastly different thermoelectric properties. Annular Bright Field Imaging of the [110] orientation, preformed in the Nion UltraSTEM 100TM reveals the presence of tilting domains in the TiO6 sub lattice, dependent on the A-site occupancy. Furthermore, advanced image analysis of the electron micrographs was used to measure local distortions in the TiO6 lattice. The presence of these octahedral distortions was further investigated by employing atomically resolved monochromated core loss Electron Energy Loss measurements, acquired with an energy resolution better than 0.100eV, using the Nion UltraSTEM 100MC TM instrument. With this approach it is not only possible to map individual components of the Ti L2,3 near edge fine structure, but also fine local changes in the ELNES; subtle changes Ti L2,3 pre-peak intensity – usually not discernible in conventional EELS measurements as well as changes in the Ti L3 eg/tg and tg L3/L2 intensity ratios all indicative of local TiO6 distortions.

    关键词: Annular Bright Field Imaging,aberration corrected Scanning Transmission Electron Microscopy,Nd2/3xTiO3,structural ordering,Electron Energy Loss measurements,thermoelectrics,fuel cells,A-site deficient perovskite,phonon scattering,perovskite oxides

    更新于2025-09-09 09:28:46

  • Nanowires for energy: A review

    摘要: Semiconductor nanowires (NWs) represent a new class of materials and a shift from conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film technology, lattice mismatch strain in NWs can be relaxed elastically at the NW free surface without dislocations. This capability can be used to grow unique heterostructures and to grow III-V NWs directly on inexpensive substrates, such as Si, rather than lattice-matched but more expensive III-V substrates. This capability, along with other unique properties (quantum confinement and light trapping), makes NWs of great interest for next generation optoelectronic devices with improved performance, new functionalities, and reduced cost. One of the many applications of NWs includes energy conversion. This review will outline applications of NWs in photovoltaics, thermoelectrics, and betavoltaics (direct conversion of solar, thermal, and nuclear energy, respectively, into electrical energy) with an emphasis on III-V materials. By transitioning away from bulk semiconductor thin films or wafers, high efficiency photovoltaic cells comprised of III-V NWs grown on Si would improve performance and take advantage of cheaper materials, larger wafer sizes, and improved economies of scale associated with the mature Si industry. The thermoelectric effect enables a conversion of heat into electrical power via the Seebeck effect. NWs present an opportunity to increase the figure of merit (ZT) of thermoelectric devices by decreasing the thermal conductivity (j) due to surface phonon backscattering from the NW surface boundaries. Quantum confinement in sufficiently thin NWs can also increase the Seebeck coefficient by modification of the electronic density of states. Prospects for III-V NWs in thermoelectric devices, including solar thermoelectric generators, are discussed. Finally, betavoltaics refers to the direct generation of electrical power in a semiconductor from a radioactive source. This betavoltaic process is similar to photovoltaics in which photon energy is converted to electrical energy. In betavoltaics, however, energetic electrons (beta particles) are used instead of photons to create electron-hole pairs in the semiconductor by impact ionization. NWs offer the opportunity for improved beta capture efficiency by almost completely surrounding the radioisotope with semiconductor material. Improving the efficiency is important in betavoltaic design because of the high cost of materials and manufacturing, regulatory restrictions on the amount of radioactive material used, and the enabling of new applications with higher power requirements.

    关键词: photovoltaics,light trapping,nanowires,quantum confinement,thermoelectrics,lattice mismatch,betavoltaics,III-V materials,semiconductor,energy conversion

    更新于2025-09-09 09:28:46

  • Empirical modeling of dopability in diamond-like semiconductors

    摘要: Carrier concentration optimization has been an enduring challenge when developing newly discovered semiconductors for applications (e.g., thermoelectrics, transparent conductors, photovoltaics). This barrier has been particularly pernicious in the realm of high-throughput property prediction, where the carrier concentration is often assumed to be a free parameter and the limits are not predicted due to the high computational cost. In this work, we explore the application of machine learning for high-throughput carrier concentration range prediction. Bounding the model within diamond-like semiconductors, the learning set was developed from experimental carrier concentration data on 127 compounds ranging from unary to quaternary. The data were analyzed using various statistical and machine learning methods. Accurate predictions of carrier concentration ranges in diamond-like semiconductors are made within approximately one order of magnitude on average across both p- and n-type dopability. The model fit to empirical data is analyzed to understand what drives trends in carrier concentration and compared with previous computational efforts. Finally, dopability predictions from this model are combined with high-throughput quality factor predictions to identify promising thermoelectric materials.

    关键词: dopability,machine learning,diamond-like semiconductors,thermoelectrics,carrier concentration

    更新于2025-09-04 15:30:14